DISCRETE SEMICONDUCTORS
DATA SHEET
BFG10; BFG10/X
NPN 2 GHz RF power transistor
Product specification
Supersedes data of 1995 Mar 07
File under Discrete Semiconductors, SC14
1995 Aug 31
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
FEATURES
•
High power gain
•
High efficiency
•
Small size discrete power amplifier
•
1.9 GHz operating area
•
Gold metallization ensures
excellent reliability.
APPLICATIONS
•
Common emitter class-AB
operation in hand-held radio
equipment at 1.9 GHz.
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in plastic, 4-pin
dual-emitter SOT143 package.
PINNING
PIN
DESCRIPTION
BFG10; BFG10/X
BFG10
(see Fig.1)
1
2
3
4
collector
base
emitter
emitter
handbook, 2 columns
4
3
1
Top view
2
MSB014
BFG10/X
(see Fig.1)
1
2
3
4
MARKING
TYPE NUMBER
BFG10
BFG10/X
CODE
N70
N71
collector
emitter
base
emitter
Fig.1 SOT143.
QUICK REFERENCE DATA
RF performance at T
amb
= 25
°C
in a common-emitter test circuit (see Fig.7).
MODE OF OPERATION
Pulsed, class-AB, duty cycle: < 1 : 8
f
(GHz)
1.9
V
CE
(V)
3.6
P
L
(mW)
200
G
p
(dB)
≥5
η
c
(%)
≥50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
junction temperature
up to T
s
= 60
°C;
see Fig.2; note 1
open base
open collector
CONDITIONS
open emitter
−
−
−
−
−
−
−65
−
MIN.
8
2.5
250
250
400
+150
175
MAX.
20
V
V
V
mA
mA
mW
°C
°C
UNIT
1995 Aug 31
2
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
CONDITIONS
open emitter; I
C
= 0.1 mA
open base; I
C
= 5 mA
open collector; I
E
= 0.1 mA
V
CE
= 5 V; V
BE
= 0
I
C
= 50 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 3.6 V; f = 1 MHz
I
C
= 0; V
CE
= 3.6 V; f = 1 MHz
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to T
s
= 60
°C;
note 1;
P
tot
= 400 mW
BFG10; BFG10/X
VALUE
290
UNIT
K/W
MIN.
20
8
2.5
−
25
−
−
MAX.
−
−
−
100
−
3
2
UNIT
V
V
V
µA
pF
pF
handbook, halfpage
500
MLC818
P tot
handbook, halfpage
2.0
MLC819
(mW)
400
Cc
(pF)
1.5
300
1.0
200
0.5
100
0
0
50
100
150
Ts ( C)
o
0
200
0
2
4
6
8
10
V CB (V)
I
C
= 0; f = 1 MHz.
Fig.3
Fig.2
Power derating curve
Collector capacitance as a function of
collector-base voltage; typical values.
1995 Aug 31
3
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
APPLICATION INFORMATION
RF performance at T
amb
= 25
°C
in a common-emitter test circuit (see Fig.7).
MODE OF OPERATION
Pulsed, class-AB, duty cycle: < 1 : 8
f
(GHz)
1.9
V
CE
(V)
3.6
I
CQ
(mA)
1
P
L
(mW)
200
BFG10; BFG10/X
G
p
(dB)
>5
typ. 7
η
c
(%)
>50
typ. 60
Ruggedness in class-AB operation
The BFG10 is capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated
output power under pulsed conditions up to a supply voltage of 7 V, f = 1.9 GHz and a duty cycle of 1 : 8.
MLC820
MLC821
handbook, halfpage
10
Gp
(dB)
8
η
c
100
η
c
(%)
80
handbook, halfpage
500
PL
(mW)
400
6
Gp
60
300
4
40
200
2
20
100
0
0
100
200
300
0
400
500
P L (mW)
0
0
50
100
PD (mW)
150
Pulsed, class-AB operation.
V
CE
= 3.6 V; V
BE
= 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for P
L
= 200 mW.
Pulsed, class-AB operation.
V
CE
= 3.6 V; V
BE
= 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for P
L
= 200 mW.
Fig.4
Power gain and efficiency as functions
of load power; typical values.
Fig.5
Load power as a function of drive
power; typical values.
1995 Aug 31
4
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
SPICE parameters for the BFG10 crystal
SEQUENCE No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
(1)
20
(1)
21
(1)
22
23
24
25
26
27
28
29
30
31
32
33
34
(1)
35
(1)
36
(1)
37
(1)
38
Note
1. These parameters have not been extracted,
the default values are shown.
1995 Aug 31
5
PARAMETER
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJC
TR
CJS
VJS
MJS
FC
VALUE
2.714
102.8
0.998
28.12
6.009
403.2
2.937
31.01
0.999
2.889
0.284
1.487
1.100
3.500
1.000
3.500
0.217
0.196
0.000
1.110
3.000
5.125
0.600
0.367
12.07
99.40
7.220
3.950
0.000
2.327
0.668
0.398
0.160
0.000
0.000
750.0
0.000
0.652
−
−
V
A
pA
−
−
−
V
A
fA
−
Ω
µA
Ω
Ω
Ω
−
eV
−
pF
V
−
ps
−
V
A
deg
pF
V
−
−
ns
F
mV
−
−
C
be
C
cb
C
ce
L1
L2
L3
L
B
L
E
C be
L1
B
LB
B'
BFG10; BFG10/X
UNIT
fA
handbook, halfpage
C cb
L2
C'
E'
LE
MBC964
C
Cce
L3
E
QL
B
= 50; QL
E
= 50; QL
B,E
(f) = QL
B,E
√(f/f
c
);
f
c
= scaling frequency = 100 MHz.
Fig.6 Package equivalent circuit SOT143.
List of components
(see Fig.6)
DESIGNATION
84
17
191
0.12
0.21
0.06
0.95
0.40
VALUE
fF
fF
fF
nH
nH
nH
nH
nH
UNIT
