DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D252
BGD812
860 MHz, 18.5 dB gain power
doubler amplifier
Product specification
Supersedes data of 2001 Sep 07
2001 Oct 30
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler
amplifier
FEATURES
•
Excellent linearity
•
Extremely low noise
•
Excellent return loss properties
•
Silicon nitride passivation
•
Rugged construction
•
Gold metallization ensures excellent reliability.
APPLICATIONS
•
CATV systems operating in the 40 to 870 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
with a voltage supply of 24 V (DC).
Side view
MSA319
BGD812
PINNING - SOT115J
PIN
1
2, 3
5
7, 8
9
input
common
+V
B
common
output
DESCRIPTION
handbook, halfpage
1
2
3
5
7
8
9
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
G
p
I
tot
power gain
total current consumption (DC)
PARAMETER
CONDITIONS
f = 45 MHz
f = 870 MHz
V
B
= 24 V
MIN.
18.2
19
380
MAX.
18.8
20
410
UNIT
dB
dB
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
B
V
i
T
stg
T
mb
supply voltage
RF input voltage
storage temperature
operating mounting base temperature
PARAMETER
−
−
−40
−20
MIN.
MAX.
30
70
+100
+100
V
dBmV
°C
°C
UNIT
2001 Oct 30
2
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler
amplifier
CHARACTERISTICS
Bandwidth 40 to 870 MHz; V
B
= 24 V; T
mb
= 35
°C;
Z
S
= Z
L
= 75
Ω
SYMBOL
G
p
SL
FL
PARAMETER
power gain
slope straight line
flatness straight line
f = 45 MHz
f = 870 MHz
f = 45 to 870 MHz; note 1
f = 45 to 100 MHz
f = 100 to 800 MHz
f = 800 to 870 MHz
s
11
input return losses
f = 45 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 550 to 650 MHz
f = 650 to 750 MHz
f = 750 to 870 MHz
f = 870 to 914 MHz
s
22
output return losses
f = 45 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 550 to 650 MHz
f = 650 to 750 MHz
f = 750 to 870 MHz
f = 870 to 914 MHz
s
21
CTB
phase response
composite triple beat
f = 50 MHz
79 chs flat; V
o
= 44 dBmV; f
m
= 547.25 MHz
112 chs flat; V
o
= 44 dBmV; f
m
= 745.25 MHz
132 chs flat; V
o
= 44 dBmV; f
m
= 859.25 MHz
112 chs; f
m
= 547.25 MHz;
V
o
= 50.2 dBmV at 745 MHz; note 2
79 chs; f
m
= 331.25 MHz;
V
o
= 47.3 dBmV at 547 MHz; note 3
X
mod
cross modulation
79 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
112 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
132 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
112 chs; f
m
= 745.25 MHz;
V
o
= 50.2 dBmV at 745 MHz; note 2
79 chs; f
m
= 331.25 MHz;
V
o
= 47.3 dBmV at 547 MHz; note 3
CONDITIONS
MIN.
18.2
19
0.4
−
−
−0.3
25
23
20
18
18
17
17
13
23
22
18
18
16
15
15
14
−45
−
−
−
−
−
−
−
−
−
−
TYP.
−
−
0.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
BGD812
MAX.
18.8
20
1.4
±0.25
±0.5
+0.1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
+45
−66.5
−61
−57
−56
−66
−67
−64
−62
−59
−67
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
2001 Oct 30
3
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler
amplifier
SYMBOL
CSO
PARAMETER
composite second
order distortion
CONDITIONS
79 chs flat; V
o
= 44 dBmV; f
m
= 548.5 MHz
112 chs flat; V
o
= 44 dBmV; f
m
= 746.5 MHz
132 chs flat; V
o
= 44 dBmV; f
m
= 860.5 MHz
112 chs; f
m
= 210 MHz;
V
o
= 50.2 dBmV at 745 MHz; note 2
79 chs; f
m
= 210 MHz;
V
o
= 47.3 dBmV at 547 MHz; note 3
d
2
V
o
second order distortion
output voltage
note 4
d
im
=
−60
dB; note 5
CTB compression = 1 dB; 132 chs flat;
f = 859.25 MHz
CSO compression = 1 dB; 132 chs flat;
f = 860.5 MHz
NF
noise figure
f = 50 MHz
f = 550 MHz
f = 750 MHz
f = 870 MHz
I
tot
Notes
1. Slope straight line is defined as gain at 870 MHz against gain at 45 MHz.
2. Tilt = 10.2 dB (55 to 745 MHz).
3. Tilt = 7.3 dB (55 to 547 MHz).
4. f
p
= 55.25 MHz; V
p
= 44 dBmV; f
q
= 805.25 MHz; V
q
= 44 dBmV; measured at f
p
+ f
q
= 860.5 MHz.
total current
consumption (DC)
note 6
MIN.
−
−
−
−
−
−
64
48
51
−
−
−
−
380
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
−
395
BGD812
MAX.
−67
−60
−58
−57
−64
−71
−
−
−
5.5
5.5
6.5
7.5
410
UNIT
dB
dB
dB
dB
dB
dB
dBmV
dBmV
dBmV
dB
dB
dB
dB
mA
5. Measured according to DIN45004B: f
p
= 851.25 MHz; V
p
= V
o
; f
q
= 858.25 MHz; V
q
= V
o
−6
dB; f
r
= 860.25 MHz;
V
r
= V
o
−6
dB; measured at f
p
+ f
q
−
f
r
= 849.25 MHz.
6. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 35 V.
2001 Oct 30
4
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler
amplifier
BGD812
handbook, halfpage
−50
MLD351
52
Vo
(dBmV)
48
handbook, halfpage
−40
MLD352
52
Vo
(dBmV)
48
CTB
(dB)
−60
(1)
Xmod
(dB)
−50
(1)
−70
44
−60
44
(2)
−80
(2)
(3)
(4)
40
−70
(3)
(4)
40
−90
0
200
400
600
36
1000
800
f (MHz)
−80
0
200
400
600
36
1000
800
f (MHz)
Z
S
= Z
L
= 75
Ω;
V
B
= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) V
o
.
(2) Typ. +3
σ.
(3) Typ.
(4) Typ.
−3 σ.
Z
S
= Z
L
= 75
Ω;
V
B
= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) V
o
.
(2) Typ. +3
σ.
(3) Typ.
(4) Typ.
−3 σ.
Fig.2
Composite triple beat as a function of
frequency under tilted conditions.
Fig.3
Cross modulation as a function of frequency
under tilted conditions.
handbook, halfpage
−50
MLD353
52
Vo
(dBmV)
48
CSO
(dB)
−60
(1)
(2)
−70
(3)
44
−80
40
−90
0
200
400
600
36
1000
800
f (MHz)
(4)
Z
S
= Z
L
= 75
Ω;
V
B
= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) V
o
.
(2) Typ. +3
σ.
(3) Typ.
(4) Typ.
−3 σ.
Fig.4
Composite second order distortion as a
function of frequency under tilted
conditions.
2001 Oct 30
5
电源技术
