LED DOT MATRIX
BL-M19X881
n
Ø
Ø
Ø
Ø
Ø
Ø
Features:
46.80mm (1.8” F 4.8 dot matrix LED display.
)
Low current operation.
Excellent character appearance.
Easy mounting on P.C. Boards or sockets.
I.C. Compatible.
ROHS Compliance.
Super Bright
Electrical-optical characteristics: (Ta=25℃)
Part No
Row
Cathode
Column Anode
BL-M19A881S-XX
BL-M19A881D-XX
BL-M19A881UR-XX
BL-M19A881E-XX
BL-M19A881Y-XX
BL-M19A881G-XX
Row Anode
Column Cathode
BL-M19B881S-XX
BL-M19B881D-XX
BL-M19B881UR-XX
BL-M19B881E-XX
BL-M19B881Y-XX
BL-M19B881G-XX
Emitted
Color
Hi Red
Super
Red
Ultra
Red
Orange
Yellow
Green
(Test Condition: IF=20mA)
Chip
Material
GaAlAs/GaAs,SH
GaAlAs/GaAs,DH
GaAlAs/GaAs,DDH
GaAsP/GaP
GaAsP/GaP
GaP/GaP
λ
P
(nm)
660
660
660
635
585
570
VF
Unit:V
Typ
1.85
1.85
1.85
2.10
2.10
2.20
Max
2.20
2.20
2.20
2.50
2.50
2.50
Iv
TYP.(mcd)
270
310
450
220
220
240
Ultra Bright
Electrical-optical characteristics: (Ta=25℃)
Part No
(Test Condition: IF=20mA)
Chip
VF
Unit:V
λ
P
(nm)
Iv
Typ
Max
TYP.(mcd)
Row Cathode
Column Anode
Row Anode
Column Cathode
Emitted Color
Material
BL-M19A881UHR-XX
BL-M19A881UE-XX
BL-M19A881YO-XX
BL-M19A881UY-XX
BL-M19A881UG-XX
BL-M19A881PG-XX
BL-M19A881B-XX
BL-M19A881W-XX
BL-M19B881UHR-XX
BL-M19B881UE-XX
BL-M19B881YO-XX
BL-M19B881UY-XX
BL-M19B881UG-XX
BL-M19B881PG-XX
BL-M19B881B-XX
BL-M19B881W-XX
Ultra Red
Ultra Orange
Ultra Amber
Ultra Yellow
Ultra Green
Ultra Pure Green
Ultra Blue
Ultra White
AlGaInP
AlGaInP
AlGaInP
AlGaInP
AlGaInP
InGaN
InGaN
InGaN
645
630
619
590
574
525
470
/
2.10
2.10
2.10
2.10
2.20
3.80
2.70
2.70
2.50
2.50
2.50
2.50
2.50
4.50
4.20
4.20
450
255
255
255
380
400
270
350
·
-XX: Surface / Lens color：
0
Number
Ref Surface Color
White
Epoxy Color
Water
clear
1
Black
White
diffused
2
Gray
Red
Diffused
3
Red
Green
Diffused
4
Green
Yellow
Diffused
5
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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LED DOT MATRIX
BL-M19X881
Absolute maximum ratings (Ta=25
℃
)
Parameter
Forward Current I
F
Power Dissipation P
d
Reverse Voltage V
R
Peak Forward Current I
PF
(Duty 1/10 @1KHZ)
Operation Temperature T
OPR
Storage Temperature T
STG
Lead Soldering Temperature
T
SOL
S
25
60
5
150
D
25
60
5
150
UR
25
60
5
150
-40 to +80
-40 to +85
Max.260±5
℃
for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
E
25
60
5
150
Y
25
60
5
150
G
30
65
5
150
Unit
mA
mW
V
mA
℃
℃
℃
n
Absolute maximum ratings (Ta=25°
C)
UHR
30
75
5
150
Parameter
Forward Current I
F
Power Dissipation P
d
Reverse Voltage V
R
Peak Forward Current I
PF
(Duty 1/10 @1KHZ)
Operation Temperature T
OPR
Storage Temperature T
STG
Lead Soldering Temperature
T
SOL
UE
30
65
5
150
YO
30
65
5
150
UY
30
65
5
150
UG
30
75
5
150
PG
30
110
5
150
B
30
120
5
100
W
30
120
5
100
U
nit
mA
mW
V
mA
℃
℃
-40 to +80
-40 to +85
Ma x.260±5
℃
for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
℃
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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LED DOT MATRIX
BL-M19X881
■
Package configuration & Internal circuit diagram
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is ±0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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LED DOT MATRIX
BL-M19X881
■
Typical electrical-optical characteristics curves:
1.0
(A)
(B)
(C)
(D)
(2)
(3)
(8)
(4)
(1) (6)
(5)
(9)
(10)
0.5
0
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
Wavelength(nm)
RELATIVE INTENSITY Vs WAVELENGTH(
λ
p )
(1) - GaAsP/GaAs 655nm/Red
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(6) - GaAlAs/GaAs 660nm/Super Red
(8) - GaAsP/GaP 610nm/Super Red
(9) - GaAlAs 880nm
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(D) - InGaAl/SiC 525nm/Ultra Green
50
FORWARD CURRENT(mA)
REL ATIVE LUMIN OU S IN TENSITY
3
2
1
0.5
0.2
0.1
-30
-20
-10
1
8
64 5
2 3
4.0
1
3.0
FORWARD CURRENT(mA)
50
40
30
20
10
0
RELATIVE LUMINOUS INTENSITY
40
30
20
10
0
1.2
1
6
2,4,8,A
3
5
2.0
5
B
1.0
0
20
40
60
80
100
1.6
2.0
2.4
2.6
3.0
20
40
60
80
100
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
FORWARD CURRENT (mA)
RELATIVE LUMINOUS
INTENSITY VS. FORWARD
CURRENT
AMBIENT TEMPERATURE Ta(
℃
)
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
1
5
4
2
3
3KHz
300KHz
1KHz
100KHz F-REFRESH RATE
10 10KHz
9
8
7
6
5
Ipeak M AX.
IDC MAX.
4
3
2
0
10
20
30
40
50
60
70
1
AMBIENT TEMPERATURE Ta(
℃
)
1
10
100
1000
tp-PULSE DURATION uS
(1,2,3,4,6,8,B.D.J.K)
10,000
Ipeak MAX.
IDC MAX.
30KHz
3KHz
300Hz
100KHz
10KHz 1KHz
100Hz
10
9
8
7
6
5
4
3
2
1
1
10
100
1000
tp-PULSE DURATION uS
(5)
10,000
NOTE:25
℃
free air temperature unless otherwise specified
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REV NO: V.2
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