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BL-S4532

GaAsP/GaP Hi-Eff Red Low power consumption.

器件类别:光电子/LED    光电   

厂商名称:BRIGHT

厂商官网:http://www.brightled.co.kr/

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器件参数
参数名称
属性值
厂商名称
BRIGHT
包装说明
L-128, 2 PIN
Reach Compliance Code
unknown
颜色
HIGH EFFICIENCY RED
配置
SINGLE
最大正向电流
0.03 A
透镜类型
DIFFUSED RED
标称发光强度
6.0 mcd
安装特点
RADIAL MOUNT
功能数量
1
端子数量
2
光电设备类型
SINGLE COLOR LED
总高度
7.2 mm
包装方法
BULK
峰值波长
635 nm
形状
CYLINDRICAL
尺寸
3 mm
表面贴装
NO
T代码
T-1
端子节距
2.54 mm
视角
100 deg
Base Number Matches
1
文档预览
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BL-S4532
Features:
1. Chip material: GaAsP/GaP
2. Emitted color : Hi-Eff Red
3. Lens Appearance : Red Diffused
4. General purpose leads.
5. Low power consumption.
6. Compatible/ low current requirements
7. Reliable and rugged.
8. This product don’t contained restriction
substance, compliance ROHS standard.
Package dimensions
5.0(.197)
3.0(.118)
2.6(.102)
3.4(.134)
1.5(.059)
MAX.
1.2(.047)
25.4(1.00) MIN.
Cathode
0.5(.02) SQ.
TYP.
5.5(.217)
1.0(.039)
MIN.
Applications:
1. TV set
2. Monitor
3. Telephone
4. Computer
5. Circuit board
Notes:
2.54(.100)
NOM.
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.25mm (0.01”) unless otherwise specified.
3. Lead spacing is measured where the leads emerge from
the package.
4. Specifications are subject to change without notice.
Absolute Maximum Ratings(Ta=25℃)
Parameter
Power Dissipation
Forward Current
Peak Forward Current*
1
Reverse
Voltage
Operating Temperature
Storage Temperature
Soldering Temperature
Symbol
Pd
I
F
I
FP
V
R
Topr
Tstg
Tsol
Rating
80
30
150
5
-40
~80
-40
~85
260
(for 5 seconds)
Unit
mW
mA
mA
V
*
1
Condition for I
FP
is pulse of 1/10 duty and 0.1msec width.
Ver.2.0 Page: 1 of 2
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BL-S4532
Electrical and optical characteristics(Ta=25
)
Parameter
Forward Voltage
Luminous Intensity
Reverse Current
Peak Wave Length
Dominant Wave Length
Spectral Line Half-width
Viewing Angle
Symbol
VF
Iv
IR
λp
λd
∆λ
2θ1/2
Condition
IF=20mA
IF=20mA
VR=5V
IF=20mA
IF=20mA
IF=20mA
IF=20mA
Min.
-
-
-
-
617
-
-
Typ.
2.0
6.0
-
640
-
45
100
Max.
2.6
-
100
-
638
-
-
Unit
V
mcd
µA
nm
nm
nm
deg
Typical Electro-Optical Characteristics Curves
Fig.1 Relative intensity vs. Wavelength
1.0
60
Fig.2 Forward current derating curve
vs. Ambient temperature
50
Relative radiant intensity
Forward current(mA)
40
0.5
30
20
10
0
540
640
740
0
20
40
60
80
100
Wavelength
λ(nm)
Ambient temperature Ta(
)
Fig.3 Forward current vs. Forward voltage
50
3.0
Fig.4 Relative luminous intensity
vs. Ambient temperature
40
Relative luminous intensity
2.5
Forward current(mA)
2.0
30
1.5
20
1.0
10
0.5
0
1
2
3
4
5
0
-40
-20
0
20
40
60
Forward voltage(V)
Ambient temperature Ta(
)
Fig.5 Relative luminous intensity
vs. Forward current
2.0
Fig.6 Radiation diagram
0
10
20
30
Relative luminous intensity(@20mA)
1.5
Relative radiant intensity
40
1.0
0.9
0.8
50
60
70
0.7
80
90
1.0
0.5
0
10
20
30
40
50
0.5
0.3
0.1
0.2
0.4
0.6
Forward current (mA)
Ver.2.0 Page: 2 of 2
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