BLC8G27LS-60AV;
BLC8G27LS-60AVH
Power LDMOS transistor
Rev. 4 — 2 December 2016
Product data sheet
1. Product profile
1.1 General description
60 W LDMOS packaged asymmetrical Doherty power transistor for base station
applications at frequencies from 2300 MHz to 2690 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in the Doherty demo board.
Test signal
1-carrier W-CDMA
IS-95
[1]
f
(MHz)
2496 to 2690
2300 to 2400
V
DS
(V)
28
26
P
L(AV)
(W)
7
7
G
p
(dB)
15.2
13.6
D
(%)
47
48
ACPR
(dBc)
30
[1]
30
[1]
Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Decoupling leads to enable improved video bandwidth
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifier for LTE base stations and multi carrier applications in the
2300 MHz to 2690 MHz frequency range
BLC8G27LS-60AV(H)
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
Pinning
Description
drain1 (main)
drain2 (peak)
gate1 (main)
gate2 (peak)
video decoupling (main)
video decoupling (peak)
source
[1]
Simplified outline
Graphic symbol
BLC8G27LS-60AV (SOT1275-3)
5
1
2
6
1, 5
3
7
4
7
3
4
2, 6
aaa-007731
BLC8G27LS-60AVH (SOT1275-1)
1
2
3
4
5
6
7
[1]
drain1 (main)
drain2 (peak)
gate1 (main)
gate2 (peak)
video decoupling (main)
video decoupling (peak)
source
Connected to flange.
[1]
5
1
2
6
1, 5
3
7
4
7
3
4
2, 6
aaa-007731
3. Ordering information
Table 3.
Ordering information
Package
Name
BLC8G27LS-60AV
BLC8G27LS-60AVH
-
-
Description
air cavity plastic earless flanged package; 6 leads
air cavity plastic earless flanged package; 6 leads
Version
SOT1275-3
SOT1275-1
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
[1]
Max
65
+13
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF
calculator.
BLC8G27LS-60AV_27LS-60AVH
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 4 — 2 December 2016
2 of 16
BLC8G27LS-60AV(H)
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
Thermal characteristics
Parameter
Conditions
T
case
= 80
C;
I
Dq
= 100 mA;
V
GS(amp) peak
= 1 V
P
L
= 7 W
P
L
= 16 W
1.84
1.25
K/W
K/W
Typ
Unit
R
th(j-case)
thermal resistance from junction to case
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C unless otherwise specified.
Symbol
V
(BR)DSS
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
V
(BR)DSS
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
Parameter
drain-source breakdown voltage
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
drain-source breakdown voltage
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
V
GS
= 0 V; I
D
= 0.18 mA
V
DS
= 10 V; I
D
= 18 mA
V
DS
= 28 V; I
D
= 108 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V; V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 18 mA
V
GS
= V
GS(th)
+ 3.75 V; I
D
= 0.63 A
V
GS
= 0 V; I
D
= 0.4 mA
V
DS
= 10 V; I
D
= 40 mA
V
DS
= 28 V; I
D
= 240 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V; V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 40 mA
V
GS
= V
GS(th)
+ 3.75 V; I
D
= 1.4 A
Min
65.25
1.45
1.75
-
-
-
-
-
65.25
1.45
1.45
-
-
-
-
-
Typ
-
1.9
2.2
-
3.2
-
0.16
792
-
1.9
1.9
-
7.0
-
0.4
356
Max
-
2.35
2.65
1.2
-
120
-
1260
-
2.35
2.35
1.2
-
120
-
573
Unit
V
V
V
A
A
nA
S
m
V
V
V
A
A
nA
S
m
Main device
Peak device
Table 7.
RF characteristics
Test signal: 1-carrier W-CDMA; PAR = 7.2 dB at 0.01 % probability on the CCDF;
3GPP test model 1; 1 to 64 DPCH; f
1
= 2496 MHz; f
2
= 2690 MHz; RF performance at V
DS
= 28 V;
I
Dq
= 100 mA (main); V
GS(amp)peak
= 0.5 V; T
case
= 25
C; unless otherwise specified; in an
asymmetrical Doherty production test circuit at frequencies from 2496 MHz to 2690 MHz.
Symbol
G
p
RL
in
D
ACPR
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio
Conditions
P
L(AV)
= 7 W
P
L(AV)
= 7 W
P
L(AV)
= 7 W
P
L(AV)
= 7 W
Min
13.8
-
40
-
Typ
15
10
44
28
Max
-
7
-
23
Unit
dB
dB
%
dBc
BLC8G27LS-60AV_27LS-60AVH
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 4 — 2 December 2016
3 of 16
BLC8G27LS-60AV(H)
Power LDMOS transistor
Table 8.
RF characteristics
Test signal: pulsed CW; t
p
= 100
s;
= 10 %; f = 2690 MHz; RF performance at V
DS
= 28 V;
I
Dq
= 100 mA (main); V
GS(amp)peak
= 0.5 V; T
case
= 25
C; unless otherwise specified; in an
asymmetrical Doherty production test circuit at frequencies from 2496 MHz to 2690 MHz.
Symbol
P
L(3dB)
Parameter
output power at 3 dB gain compression
Conditions
Min
42
Typ
50
Max
-
Unit
W
7. Test information
7.1 Ruggedness in Doherty operation
The BLC8G27LS-60AV and BLC8G27LS-60AVH are capable of withstanding a load
mismatch corresponding to a VSWR = 10 : 1 through all phases under the following
conditions: V
DS
= 28 V; I
Dq
= 100 mA (main); V
GS(amp)peak
= 0.5 V; P
L
= 20 W (CW);
f = 2496 MHz.
7.2 Impedance information
Table 9.
Typical impedance of main device
Measured load-pull data of main device; I
Dq
= 100 mA (main); V
DS
= 28 V.
f
(MHz)
2496
2600
2690
2496
2600
2690
[1]
[2]
Z
S
[1]
()
6.3
j11.2
8.9
j12.3
10.7
j9.5
6.3
j11.2
8.9
j12.3
10.7
j9.5
Z
L
[1]
()
18.4
j12.7
17.5
j12.4
16.0
j12.5
28.0
j0.0
24.4
j1.7
19.4
j0.0
P
L
[2]
(W)
23
23
22
17
16
17
D
[2]
(%)
60
58
56
67.0
65.5
64.5
G
p
[2]
(dB)
18.8
19.1
19.4
20.9
21.2
21.3
Maximum power load
Maximum drain efficiency load
Z
S
and Z
L
defined in
Figure 1.
at 3 dB gain compression.
Table 10. Typical impedance of peak device
Measured load-pull data of peak device; I
Dq
= 240 mA (peak); V
DS
= 28 V.
f
(MHz)
2496
2600
2690
Z
S
[1]
()
4.5
j9.9
4.7
j9.8
2.5
j5.3
Z
L
[1]
()
5.8
j9.8
6.0
j9.7
6.6
j10.4
P
L
[2]
(W)
51
51
52
D
[2]
(%)
55.9
56.9
57.0
G
p
[2]
(dB)
17.6
18.3
17.8
Maximum power load
BLC8G27LS-60AV_27LS-60AVH
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 4 — 2 December 2016
4 of 16
BLC8G27LS-60AV(H)
Power LDMOS transistor
Table 10. Typical impedance of peak device
…continued
Measured load-pull data of peak device; I
Dq
= 240 mA (peak); V
DS
= 28 V.
f
(MHz)
2496
2600
2690
[1]
[2]
Z
S
[1]
()
4.5
j9.9
4.7
j9.8
2.5
j5.3
Z
L
[1]
()
11.6
j5.8
10.2
j4.6
9.1
j4.9
P
L
[2]
(W)
36.5
34.4
35.1
D
[2]
(%)
64.1
63.3
62.3
G
p
[2]
(dB)
20.3
20.7
20.5
Maximum drain efficiency load
Z
S
and Z
L
defined in
Figure 1.
at 3 dB gain compression.
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.3 Recommended impedances for Doherty design
Table 11. Typical impedance of main device at 1 : 1 load
Measured load-pull data of main device; I
Dq
= 100 mA (main); V
DS
= 28 V.
f
(MHz)
2496
2600
2690
[1]
[2]
[3]
Z
S
[1]
()
6.3
j11.2
8.9
j12.3
10.7
j9.5
Z
L
[1]
()
25.0
j9.2
21.5
j7.6
20.7
j8.8
P
L
[2]
(dBm)
43.2
43.2
43.2
D
[3]
(%)
37.0
37.3
37.1
G
p
[3]
(dB)
20.0
20.2
20.2
Z
S
and Z
L
defined in
Figure 1.
at 3 dB gain compression.
at P
L(AV)
= 38.5 dBm.
Table 12. Typical impedance of main device at 1 : 2.5 load
Measured load-pull data of main device; I
Dq
= 100 mA (main); V
DS
= 28 V.
f
(MHz)
2496
2600
2690
[1]
[2]
[3]
Z
S
[1]
()
6.3
j11.2
8.9
j12.3
10.7
j9.5
Z
L
[1]
()
24.5
j17.8
18.0
j11.5
16.9
j8.2
P
L
[2]
(dBm)
40.0
40.2
40.6
D
[3]
(%)
52.0
51.5
52.1
G
p
[3]
(dB)
22.0
22.2
22.0
Z
S
and Z
L
defined in
Figure 1.
at 3 dB gain compression.
at P
L(AV)
= 38.5 dBm.
BLC8G27LS-60AV_27LS-60AVH
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 4 — 2 December 2016
5 of 16
