BLF147
VHF power MOS transistor
Rev. 06 — 5 December 2006
Product data sheet
IMPORTANT NOTICE
Dear customer,
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- NXP Semiconductors, which will be used in future data sheets together with new contact
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NXP Semiconductors
NXP
Semiconductors
Product specification
VHF power MOS transistor
FEATURES
•
High power gain
•
Low intermodulation distortion
•
Easy power control
•
Good thermal stability
•
Withstands full load mismatch.
APPLICATIONS
•
Industrial and military applications in the HF/VHF
frequency range.
handbook, halfpage
BLF147
PINNING - SOT121B
PIN
1
2
3
4
drain
source
gate
source
DESCRIPTION
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 4-lead, SOT121B flange
package with a ceramic cap. All leads are isolated from the
flange. A marking code, showing gate-source voltage
(V
GS
) information is provided for matched pair
applications. Refer to the “General” section of the
handbook for further information.
1
4
d
g
s
2
3
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A, and
SNW-FQ-302B.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a common source test circuit.
MODE OF
OPERATION
SSB, class-AB
CW, class-B
f
(MHz)
28
108
V
DS
(V)
28
28
P
L
(W)
150 (PEP)
150
G
p
(dB)
>17
typ. 14
η
D
(%)
>35
typ. 70
d
3
(dB)
<−30
−
MAM267
Fig.1 Simplified outline and symbol.
d
5
(dB)
<−30
−
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
Rev. 06 - 5 December 2006
2 of 15
NXP
Semiconductors
Product specification
VHF power MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
V
DS
V
GS
I
D
P
tot
T
stg
T
j
PARAMETER
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
T
mb
≤
25
°C
CONDITIONS
−
−
−
−
−65
−
MIN.
BLF147
MAX.
65
±20
25
220
150
200
V
V
A
W
UNIT
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th mb-h
PARAMETER
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
VALUE
0.8
0.2
UNIT
K/W
K/W
10
2
handbook, halfpage
ID
(A)
MRA904
handbook, halfpage
300
MGP049
Ptot
(W)
(1)
200
(1)
(2)
(2)
10
100
1
1
10
VDS (V)
10
2
0
0
50
100
Th (°C)
150
(1) Current is this area may be limited by R
DSon
.
(2) T
mb
= 25
°C.
(1) Short-time operation during mismatch.
(2) Continuous operation.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
Rev. 06 - 5 December 2006
3 of 15
NXP
Semiconductors
Product specification
VHF power MOS transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
I
DSS
I
GSS
V
GSth
∆V
GS
g
fs
R
DSon
I
DSX
C
is
C
os
C
rs
PARAMETER
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference of
matched pairs
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
CONDITIONS
I
D
= 100 mA; V
GS
= 0
V
GS
= 0; V
DS
= 28 V
V
GS
=
±20
V; V
DS
= 0
I
D
= 200 mA; V
DS
= 10 V
I
D
= 100 mA; V
DS
= 10 V
I
D
= 8 A; V
DS
= 10 V
I
D
= 8 A; V
GS
= 10 V
V
GS
= 10 V; V
DS
= 10 V
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
MIN.
65
−
−
2
−
5
−
−
−
−
−
BLF147
TYP. MAX.
−
−
−
−
−
7.5
0.1
37
450
360
55
−
5
1
4.5
100
−
0.15
−
−
−
−
UNIT
V
mA
µA
V
mV
S
Ω
A
pF
pF
pF
V
GS
group indicator
LIMITS
(V)
MIN.
A
B
C
D
E
F
G
H
J
K
L
M
N
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
O
P
Q
R
S
T
U
V
W
X
Y
Z
LIMITS
(V)
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
GROUP
GROUP
Rev. 06 - 5 December 2006
4 of 15
NXP
Semiconductors
Product specification
VHF power MOS transistor
BLF147
MGP050
0
handbook, halfpage
T.C.
(mV/K)
−1
handbook, halfpage
60
MGP051
ID
(A)
40
−2
−3
20
−4
−5
10
−2
0
10
−1
1
ID (A)
10
0
5
10
15
VGS (V)
20
V
DS
= 28 V; valid for T
h
= 25 to 70
°C.
V
DS
= 10 V.
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
Fig.5
Drain current as a function of gate-source
voltage; typical values.
handbook, halfpage
170
MGP052
handbook, halfpage
1400
MRA903
RDSon
(mΩ)
150
C
(pF)
1200
130
800
Cis
110
400
Cos
90
0
50
100
Tj ( C)
150
0
0
10
20
30
VDS (V)
V
GS
= 0; f = 1 MHz.
40
I
D
= 8 A; V
GS
= 10 V.
Fig.6
Drain-source on-state resistance as a
function of junction temperature; typical
values.
Fig.7
Input and output capacitance as functions
of drain-source voltage; typical values.
Rev. 06 - 5 December 2006
5 of 15
stm32/stm8
