BLF188XR; BLF188XRS
Power LDMOS transistor
Rev. 6 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.
Table 1.
Application information
f
(MHz)
CW
2 to 30
27
41
60
72.5
81.4
88 to 108
108
200
pulsed RF
81.4
81.4
108
DVB-T
174 to 230
V
DS
(V)
50
50
50
48
50
50
50
50
50
50
50
50
50
P
L
(W)
1270
1400
1200
1240
1350
1200
1320
1200
1288
1200
1400
1400
225
G
p
(dB)
29.0
23.7
22.0
22.0
23.1
27.1
22.5
26.5
19.3
25.8
25.4
24.0
23.8
D
(%)
75
73
82
77
83
77.8
85
83
68.3
85
81
73
29
Test signal
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 600 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
BLF188XR; BLF188XRS
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
Graphic symbol
BLF188XR (SOT539A)
1
2
5
1
3
3
4
5
4
2
sym117
BLF188XRS (SOT539B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
[1]
1
2
5
1
3
4
3
5
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Name Description
BLF188XR
BLF188XRS
-
-
earless flanged balanced ceramic package; 4 leads
Version
SOT539B
Type number Package
flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
6
65
[1]
Max
135
+11
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator
BLF188XR_BLF188XRS#6
All information provided in this document is subject to legal disclaimers.
© Ampleon B.V. 2015. All rights reserved.
Product data sheet
Rev. 6 — 1 September 2015
2 of 15
BLF188XR; BLF188XRS
Power LDMOS transistor
5. Thermal characteristics
Table 5.
R
th(j-c)
Z
th(j-c)
[1]
[2]
[3]
Thermal characteristics
Conditions
T
j
= 150
C
[1][2]
[3]
Symbol Parameter
thermal resistance from junction to case
Typ
0.10
0.03
Unit
K/W
K/W
transient thermal impedance from junction T
j
= 150
C;
t
p
= 100
s;
to case
= 20 %
T
j
is the junction temperature.
R
th(j-c)
is measured under RF conditions.
See
Figure 1.
0.2
Z
th(j-c)
(K/W)
0.15
aaa-009586
0.1
(7)
(6)
(5)
(4)
(3)
(2)
(1)
0.05
0
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
10
(1)
= 1 %
(2)
= 2 %
(3)
= 5 %
(4)
= 10 %
(5)
= 20 %
(6)
= 50 %
(7)
= 100 % (DC)
Fig 1.
Transient thermal impedance from junction to case as a function of pulse
duration
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
V
GSq
BLF188XR_BLF188XRS#6
Conditions
V
GS
= 0 V; I
D
= 5.5 mA
V
DS
= 10 V; I
D
= 550 mA
V
DS
= 50 V; I
D
= 20 mA
Min
135
1.25
0.68
Typ
-
1.9
1.5
Max
-
2.25
1.88
Unit
V
V
V
gate-source threshold voltage
gate-source quiescent voltage
All information provided in this document is subject to legal disclaimers.
© Ampleon B.V. 2015. All rights reserved.
Product data sheet
Rev. 6 — 1 September 2015
3 of 15
BLF188XR; BLF188XRS
Power LDMOS transistor
Table 6.
DC characteristics
…continued
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
I
DSS
I
DSX
I
GSS
R
DS(on)
drain leakage current
drain cut-off current
gate leakage current
drain-source on-state
resistance
Conditions
V
GS
= 0 V; V
DS
= 50 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 19.25 A
Min
-
-
-
-
Typ
-
77
-
0.08
Max
2.8
-
280
-
Unit
A
A
nA
Table 7.
AC characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
C
rs
C
iss
C
oss
feedback capacitance
input capacitance
output capacitance
Conditions
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz
Min Typ Max Unit
-
-
-
6.2
-
pF
pF
pF
582 -
212 -
Table 8.
RF characteristics
Test signal: pulsed RF; t
p
= 100
s;
= 10 %; f = 108 MHz; RF performance at V
DS
= 50 V;
I
Dq
= 40 mA; T
case
= 25
C; unless otherwise specified; in a class-AB production test circuit.
Symbol
G
p
RL
in
D
Parameter
power gain
input return loss
drain efficiency
Conditions
P
L
= 1400 W
P
L
= 1400 W
P
L
= 1400 W
Min
23.2
-
69
Typ
24.4
21
73
Max
-
14
-
Unit
dB
dB
%
1200
C
oss
(pF)
1000
aaa-009587
800
600
400
200
0
0
10
20
30
40
V
DS
(V)
50
V
GS
= 0 V; f = 1 MHz.
Fig 2.
Output capacitance as a function of drain-source voltage; typical values per
section
BLF188XR_BLF188XRS#6
All information provided in this document is subject to legal disclaimers.
© Ampleon B.V. 2015. All rights reserved.
Product data sheet
Rev. 6 — 1 September 2015
4 of 15
BLF188XR; BLF188XRS
Power LDMOS transistor
7. Test information
7.1 Ruggedness in class-AB operation
The BLF188XR and BLF188XRS are capable of withstanding a load mismatch
corresponding to VSWR > 65 : 1 through all phases under the following conditions:
V
DS
= 50 V; I
Dq
= 40 mA; P
L
= 1400 W pulsed; f = 108 MHz.
7.2 Impedance information
drain 1
gate 1
Z
i
gate 2
drain 2
001aan207
Z
L
Fig 3.
Definition of transistor impedance
Table 9.
Typical push-pull impedance
Simulated Z
i
and Z
L
device impedance; impedance info at V
DS
= 50 V and P
L
= 1400 W.
f
(MHz)
108
Z
i
()
2.94
j9.64
Z
L
()
2.74 + j0.57
7.3 UIS avalanche energy
Table 10. Typical avalanche data per section
T
amb
= 25
C; typical test data; test jig without water cooling.
I
AS
(A)
35
40
45
50
E
AS
(J)
4.5
3.4
2.4
2.0
For information see application note “AN10273”.
BLF188XR_BLF188XRS#6
All information provided in this document is subject to legal disclaimers.
© Ampleon B.V. 2015. All rights reserved.
Product data sheet
Rev. 6 — 1 September 2015
5 of 15
