BLF574XR; BLF574XRS
Power LDMOS transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 600 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 500 MHz band. This product is an enhanced version of the
BLF574 using Ampleon's XR process to provide maximum ruggedness capability in the
most severe applications without compromising the RF performance.
Table 1.
Application information
f
(MHz)
CW
pulsed RF
225
225
V
DS
(V)
50
50
P
L
(W)
600
600
G
p
(dB)
23.5
24
D
(%)
74.5
74.7
Test signal
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
BLF574XR; BLF574XRS
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
Graphic symbol
BLF574XR (SOT1214A)
1
2
5
3
4
1
3
5
4
2
sym117
BLF574XRS (SOT1214B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
[1]
1
2
1
3
5
4
3
4
5
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Name Description
BLF574XR
BLF574XRS
-
-
flanged ceramic package; 2 mounting holes; 4 leads
earless flanged ceramic package; 4 leads
Version
SOT1214A
SOT1214B
Type number Package
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
6
65
[1]
Max
110
+11
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability. For details refer to the on-line MTF
calculator.
BLF574XR_BLF574XRS#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
2 of 14
BLF574XR; BLF574XRS
Power LDMOS transistor
5. Thermal characteristics
Table 5.
R
th(j-c)
[1]
[2]
Thermal characteristics
Conditions
T
j
= 150
C
[1][2]
Symbol Parameter
thermal resistance from junction to case
Typ
0.18
Unit
K/W
T
j
is the junction temperature.
R
th(j-c)
is measured under RF conditions.
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
drain-source on-state
resistance
Conditions
V
GS
= 0 V; I
D
= 2.75 mA
V
DS
= 10 V; I
D
= 275 mA
V
GS
= 0 V; V
DS
= 50 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 9.625 A
Min
110
1.25
-
-
-
-
Typ
-
1.7
-
38
-
0.15
Max
-
2.25
1.4
-
140
-
Unit
V
V
A
A
nA
Table 7.
DC characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
C
rs
C
iss
C
oss
feedback capacitance
input capacitance
output capacitance
Conditions
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz
Min Typ Max Unit
-
-
-
2.4
94
-
-
pF
pF
pF
210 -
Table 8.
RF characteristics
Test signal: CW; f = 225 MHz; RF performance at V
DS
= 50 V; I
Dq
= 100 mA; T
case
= 25
C; unless
otherwise specified; in a class-AB production test circuit.
Symbol Parameter
G
p
RL
in
D
power gain
input return loss
drain efficiency
Conditions
P
L
= 600 W
P
L
= 600 W
P
L
= 600 W
Min
-
70
Typ
17
74.5
Max
-
13
-
Unit
dB
dB
%
21.65 23.5
BLF574XR_BLF574XRS#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
3 of 14
BLF574XR; BLF574XRS
Power LDMOS transistor
600
C
oss
(pF)
450
aaa-008096
300
150
0
0
20
40
V
DS
(V)
60
V
GS
= 0 V; f = 1 MHz.
Fig 1.
Output capacitance as a function of drain-source voltage; typical values per
section
7. Test information
7.1 Ruggedness in class-AB operation
The BLF574XR and BLF574XRS are capable of withstanding a load mismatch
corresponding to VSWR > 65 : 1 through all phases under the following conditions:
V
DS
= 50 V; I
Dq
= 100 mA; P
L
= 600 W pulsed; f = 225 MHz.
7.2 Impedance information
drain 1
gate 1
Z
i
gate 2
drain 2
001aan207
Z
L
Fig 2.
Definition of transistor impedance
Table 9.
Typical push-pull impedance
Simulated Z
i
and Z
L
device impedance; impedance info at V
DS
= 50 V and P
L
= 600 W.
f
(MHz)
225
Z
i
()
4.67
j5.47
Z
L
()
5.66 + j2.05
BLF574XR_BLF574XRS#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
4 of 14
BLF574XR; BLF574XRS
Power LDMOS transistor
7.3 Test circuit
95 mm
95 mm
R3
C8
C10
C12
C2
C4
C6
C3
C5
C13
C7
C1
L2
L3
C21
C19
C17
C14
R4
T2
C26
C23
C15
C25
C16
C18
R5
L4
C20
C22
C24
C27
C28
80 mm
T1
C9
R1
C11
R2
L1
42.5 mm
28 mm
15 mm
41.5 mm
aaa-008104
Printed-Circuit Board (PCB) Rogers 5880:
r
= 2.2 F/m; thickness = 0.79 mm; thickness copper plating = 35
m.
See
Table 10
for a list of components.
Fig 3.
Component layout for class-AB production test circuit
Table 10. List of components
For test circuit see
Figure 3.
Component
Description
Value
[1]
Remarks
C1, C2, C3, C10, multilayer ceramic chip capacitor 1 nF
C11, C17, C18
C4, C5
C6, C7
C8, C9
C12, C13
C14, C16
C15
C19, C20
C21, C22
C23
C24, C25
C26, C27
C28
L1, L2
L3, L4
R1
multilayer ceramic chip capacitor 62 pF
multilayer ceramic chip capacitor 51 pF
multilayer ceramic chip capacitor 4.7
F,
50 V
multilayer ceramic chip capacitor 33 pF
multilayer ceramic chip capacitor 43 pF
multilayer ceramic chip capacitor 20 pF
multilayer ceramic chip capacitor 4.7
F;
100 V
electrolytic capacitor
470
F;
63 V
multilayer ceramic chip capacitor 5
12 pF
multilayer ceramic chip capacitor 4
16 pF
multilayer ceramic chip capacitor 2
510 pF
multilayer ceramic chip capacitor 56 pF
2 turn 1 mm copper wire
3 turn 1 mm copper wire
chip resistor
D = 3 mm,
length = 3 mm
D = 3 mm,
length = 3 mm
0
[1]
[1]
Kemet
C1210X475K5RAC-T4
[2]
[1]
[1]
[3]
[3]
[3]
[1]
BLF574XR_BLF574XRS#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
5 of 14
