BLF6G10-200RN;
BLF6G10LS-200RN
Power LDMOS transistor
Rev. 02 — 21 January 2010
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
700 MHz to 1000 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
°
C in a class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
869 to 894
V
DS
(V)
28
P
L(AV)
(W)
40
G
p
(dB)
20
η
D
(%)
28.5
ACPR
(dBc)
−39
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a
supply voltage of 28 V and an I
Dq
of 1400 mA:
Average output power = 40 W
Power gain = 20 dB
Efficiency = 28.5 %
ACPR =
−39
dBc
Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (700 MHz to 1000 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
NXP Semiconductors
BLF6G10(LS)-200RN
Power LDMOS transistor
1.3 Applications
RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multicarrier applications in the 700 MHz to 1000 MHz frequency range.
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLF6G10-200RN (SOT502A)
1
3
2
2
3
sym112
1
BLF6G10LS-200RN (SOT502B)
1
2
3
drain
gate
source
[1]
1
3
2
2
1
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF6G10-200RN
-
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502A
SOT502B
Type number
BLF6G10LS-200RN -
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
−0.5
-
−65
-
Max
65
+13
49
+150
225
Unit
V
V
A
°C
°C
BLF6G10-200RN_10LS-200RN_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 21 January 2010
2 of 11
NXP Semiconductors
BLF6G10(LS)-200RN
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
R
th(j-case)
Thermal characteristics
Parameter
thermal resistance from
junction to case
Conditions
T
case
= 80
°C;
P
L
= 40 W
Type
BLF6G10-200RN
BLF6G10LS-200RN
Typ
0.50
0.35
Unit
K/W
K/W
6. Characteristics
Table 6.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
rs
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Conditions
V
GS
= 0 V; I
D
= 0.9 mA
V
DS
= 10 V; I
D
= 270 mA
V
DS
= 28 V;
I
D
= 1620 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 9.45 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 9.45 A
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
Min
65
1.4
1.7
-
40
-
11
Typ
-
2.0
2.2
-
48
-
18
Max
-
2.4
2.7
4.2
-
420
26
Unit
V
V
V
μA
A
nA
S
0.012 0.07
-
3
0.093
Ω
-
pF
7. Application information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f
1
= 871.5 MHz; f
2
= 876.5 MHz; f
3
= 886.5 MHz; f
4
= 891.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 1400 mA; T
case
= 25
°
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol
P
L(AV)
G
p
IRL
η
D
ACPR
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
P
L(AV)
= 40 W
P
L(AV)
= 40 W
P
L(AV)
= 40 W
P
L(AV)
= 40 W
Conditions
Min
-
19
-
25
-
Typ
40
20
−6.4
28.5
Max
-
-
−4.5
-
Unit
W
dB
dB
%
dBc
−39.4 −36
7.1 Ruggedness in class-AB operation
The BLF6G10-200RN and BLF6G10LS-200RN are enhanced rugged devices and are
capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all
phases under the following conditions: V
DS
= 28 V; I
Dq
= 1400 mA; P
L
= 200 W;
f = 894 MHz.
BLF6G10-200RN_10LS-200RN_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 21 January 2010
3 of 11
NXP Semiconductors
BLF6G10(LS)-200RN
Power LDMOS transistor
7.2 One-tone CW
21
G
p
(dB)
19
η
D
G
p
001aaj415
60
η
D
(%)
40
17
20
15
0
40
80
120
0
160
200
P
L
(W)
V
DS
= 28 V; I
Dq
= 1400 mA; f = 881 MHz.
Fig 1.
One-tone CW power gain and drain efficiency as function of load power;
typical values
7.3 Two-tone CW
21
G
p
(dB)
19
η
D
G
p
001aaj416
60
η
D
(%)
40
−20
IMD
(dBc)
−30
001aah520
IMD3
−40
IMD5
17
20
−50
IMD7
15
0
120
240
P
L(PEP)
(W)
0
360
−60
0
60
120
P
L(PEP)
(W)
180
V
DS
= 28 V; I
Dq
= 1400 mA; f = 881 MHz (±100 kHz).
V
DS
= 28 V; I
Dq
= 1400 mA; f = 881 MHz (±100 kHz).
Fig 2.
Two-tone CW power gain and drain efficiency
as function of peak envelope load power;
typical values
Fig 3.
Two-tone CW intermodulation distortion as a
function of peak envelope load power; typical
values
BLF6G10-200RN_10LS-200RN_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 21 January 2010
4 of 11
NXP Semiconductors
BLF6G10(LS)-200RN
Power LDMOS transistor
7.4 2-carrier W-CDMA
22
G
p
(dB)
21
001aaj417
40
η
D
(%)
30
−35
IMD3,
ACPR
(dBc)
−40
IMD3
001aah522
20
G
p
20
−45
ACPR
19
η
D
10
−50
18
0
20
40
P
L(AV)
(W)
60
0
−55
0
20
40
P
L(AV)
(W)
60
V
DS
= 28 V; I
Dq
= 1400 mA; f = 881 MHz (±5 MHz);
carrier spacing 10 MHz.
V
DS
= 28 V; I
Dq
= 1400 mA; f = 881 MHz (±5 MHz);
carrier spacing 10 MHz.
Fig 4.
2-carrier W-CDMA power gain and drain
efficiency as function of average load power;
typical values
Fig 5.
2-carrier W-CDMA adjacent channel power
ratio and third order intermodulation distortion
as function of average load power; typical
values
8. Test information
V
GG
R1
C3
C7
C8
C11
C13
C17
R3
V
DD
R2
C5
L1
input
50
Ω
C1
C16
output
50
Ω
C6
C2
C15
C9
C10
C12
C14
C18
001aah523
The drawing is not to scale.
Fig 6.
Test circuit for operation at 800 MHz
BLF6G10-200RN_10LS-200RN_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 21 January 2010
5 of 11
