型号
- 型号
- 关键词
| 型号 | BLF6G38S-25112 | BLF6G38S-25118 |
|---|---|---|
| 描述 | RF MOSFET Transistors LDMOS TNS | RF MOSFET Transistors RF Power Transistor |
| 产品种类 Product Category |
RF MOSFET Transistors | RF MOSFET Transistors |
| 制造商 Manufacturer |
NXP(恩智浦) | NXP(恩智浦) |
| RoHS | Details | Details |
| Transistor Polarity | N-Channel | N-Channel |
| Id - Continuous Drain Current | 8.2 A | 8.2 A |
| Vds - Drain-Source Breakdown Voltage | 65 V | 65 V |
| Rds On - Drain-Source Resistance | 580 mOhms | 580 mOhms |
| 技术 Technology |
Si | Si |
| 最大工作温度 Maximum Operating Temperature |
+ 150 C | + 150 C |
| 安装风格 Mounting Style |
SMD/SMT | SMD/SMT |
| 封装 / 箱体 Package / Case |
SOT-502B-3 | SOT-502B-3 |
| Configuration | Single | Single |
| 工厂包装数量 Factory Pack Quantity |
60 | 100 |
| 类型 Type |
RF Power MOSFET | RF Power MOSFET |
| Vgs - Gate-Source Voltage | 13 V | 13 V |
| 系列 Packaging |
Tube | Reel |
