BLF881; BLF881S
UHF power LDMOS transistor
Rev. 3 — 7 December 2010
Product data sheet
1. Product profile
1.1 General description
A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent
ruggedness and broadband performance of this device makes it ideal for digital
transmitter applications.
Table 1.
Typical performance
RF performance at V
DS
= 50 V in a common-source 860 MHz test circuit.
Mode of operation
2-tone, class AB
DVB-T (8k OFDM)
[1]
f
(MHz)
f
1
= 860; f
2
= 860.1
858
P
L
-
-
P
L(PEP)
140
-
P
L(AV)
G
p
(W)
-
33
21
21
η
D
49
34
IMD3
−34
-
IMD
shldr
(dBc)
-
−33
[1]
(W) (W)
(dB) (%) (dBc)
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
2-Tone performance at 860 MHz, a drain-source voltage V
DS
of 50 V and a quiescent
drain current I
Dq
= 0.5 A:
Peak envelope power load power = 140 W
Power gain = 21 dB
Drain efficiency = 49 %
Third order intermodulation distortion =
−34
dBc
DVB performance at 858 MHz, a drain-source voltage V
DS
of 50 V and a quiescent
drain current I
Dq
= 0.5 A:
Average output power = 33 W
Power gain = 21 dB
Drain efficiency = 34 %
Shoulder distance =
−33
dBc (4.3 MHz from center frequency)
Integrated ESD protection
Excellent ruggedness
High power gain
NXP Semiconductors
BLF881; BLF881S
UHF power LDMOS transistor
High efficiency
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Communication transmitter applications in the UHF band
Industrial applications in the UHF band
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLF881 (SOT467C)
1
2
3
sym112
BLF881S (SOT467B)
1
2
3
drain
gate
source
[1]
1
3
2
1
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Name Description
BLF881
BLF881S
-
-
earless LDMOST ceramic package; 2 leads
Version
SOT467B
Type number Package
flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C
BLF881_BLF881S
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 7 December 2010
2 of 18
NXP Semiconductors
BLF881; BLF881S
UHF power LDMOS transistor
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
−0.5
−65
-
Max
104
+13
+150
200
Unit
V
V
°C
°C
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
[1]
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
°C;
P
L(AV)
= 70 W
[1]
Typ
0.95
Unit
K/W
R
th(j-c)
is measured under RF conditions.
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
DSX
I
GSS
R
DS(on)
C
iss
C
oss
C
rss
[1]
Parameter
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
drain-source on-state resistance
input capacitance
output capacitance
reverse transfer capacitance
Conditions
V
GS
= 0 V; I
D
= 1.35 mA
V
DS
= 10 V; I
D
= 135 mA
V
GS
= 0 V; V
DS
= 50 V
V
GS
= V
GSth
+ 3.75 V; V
DS
= 10 V
V
GS
= 10 V; V
DS
= 0 V
V
GS
= V
GSth
+ 3.75 V; I
D
= 4.5 A
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz
[1]
[1]
[1]
Min
104
1.4
-
19
-
-
-
-
-
Typ
-
-
-
21
-
210
100
33.5
1
Max
-
2.4
1.4
-
140
-
-
-
-
Unit
V
V
μA
A
nA
mΩ
pF
pF
pF
I
D
is the drain current.
Table 7.
RF characteristics
T
h
= 25
°
C unless otherwise specified.
Symbol
V
DS
I
Dq
P
L(PEP)
G
p
η
D
IMD3
BLF881_BLF881S
Parameter
drain-source voltage
quiescent drain current
peak envelope power load power
power gain
drain efficiency
third-order intermodulation distortion
Conditions
Min
-
-
-
20
45
-
Typ
50
0.5
140
21
49
−34
Max
-
-
-
-
-
−30
Unit
V
A
W
dB
%
dBc
3 of 18
2-Tone, class AB
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 7 December 2010
NXP Semiconductors
BLF881; BLF881S
UHF power LDMOS transistor
Table 7.
RF characteristics
…continued
T
h
= 25
°
C unless otherwise specified.
Symbol
V
DS
I
Dq
P
L(AV)
G
p
η
D
IMD
shldr
PAR
[1]
[2]
Parameter
drain-source voltage
quiescent drain current
average output power
power gain
drain efficiency
intermodulation distortion shoulder
peak-to-average ratio
Conditions
Min
-
-
-
20
30
[1]
[2]
Typ
50
0.5
33
21
34
−33
8.3
Max
-
-
-
-
-
−30
-
Unit
V
A
W
dB
%
dBc
dB
DVB-T (8k OFDM)
-
-
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
200
C
oss
(pF)
160
001aal074
120
80
40
0
0
20
40
60
V
DS
(V)
80
V
GS
= 0 V; f = 1 MHz.
Fig 1.
Output capacitance as a function of drain-source voltage; typical values
BLF881_BLF881S
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 7 December 2010
4 of 18
NXP Semiconductors
BLF881; BLF881S
UHF power LDMOS transistor
7. Application information
7.1 Narrowband RF figures
7.1.1 CW
001aal075
23
G
p
(dB)
22
21
20
19
18
17
16
0
40
80
120
G
p
70
η
D
(%)
60
50
40
30
20
10
η
D
0
160
200
P
L
(W)
V
DS
= 50 V; I
Dq
= 0.5 A; measured in a common-source narrowband 860 MHz test circuit.
Fig 2.
CW power gain and drain efficiency as function of load power; typical values
7.1.2 2-Tone
0001aal076
001aal077
23
G
p
(dB)
22
21
20
19
18
17
16
0
40
80
G
p
70
η
D
(%)
60
50
40
30
0
IMD3
(dBc)
−20
η
D
−40
20
10
0
120
160
P
L(AV)
(W)
−60
0
40
80
120
160
P
L(AV)
(W)
V
DS
= 50 V; I
Dq
= 0.5 A; measured in a common-source
narrowband 860 MHz test circuit.
V
DS
= 50 V; I
Dq
= 0.5 A; measured in a common-source
narrowband 860 MHz test circuit.
Fig 3.
2-Tone power gain and drain efficiency as
function of average load power; typical values
Fig 4.
2-Tone third order intermodulation distortion
as a function of average load power; typical
values
BLF881_BLF881S
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 7 December 2010
5 of 18
