BLF898; BLF898S
UHF power LDMOS transistor
Rev. 1 — 25 July 2017
Product data sheet
1. Product profile
1.1 General description
A 900 W LDMOS RF power transistor for broadcast Doherty, class AB transmitter and
ISM applications. The excellent ruggedness of this device makes it ideal for digital and
analog transmitter applications.
Table 1.
Application information
RF performance at V
DS
= 50 V in a class AB broadband application demo.
Test signal
DVB-T (8k OFDM)
f
(MHz)
800
590 to 690
[1]
P
L(AV)
(W)
180
180
G
p
(dB)
20
18
D
(%)
32
33
IMD
shldr
(dBc)
30
30
PAR
(dB)
8
[1]
8
[1]
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
Designed for symmetric and asymmetric Doherty operation
High efficiency
Integrated dual sided ESD protection
Excellent ruggedness
High power gain
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Broadcast transmitter applications in the UHF band
Digital broadcasting
Industrial, Scientific and Medical applications
BLF898; BLF898S
UHF power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
Graphic symbol
BLF898 (SOT539A)
1
2
5
1
3
3
4
5
4
2
sym117
BLF898S (SOT539B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
[1]
1
2
5
1
3
4
3
5
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Name Description
BLF898
BLF898S
-
-
earless flanged balanced ceramic package; 4 leads
Version
SOT539B
Type number Package
flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
6
65
[1]
Max
120
+11
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF
calculator.
BLF898_BLF898S
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 25 July 2017
2 of 12
BLF898; BLF898S
UHF power LDMOS transistor
5. Thermal characteristics
Table 5.
R
th(j-c)
Thermal characteristics
Conditions
T
case
= 90
C;
V
DS
= 50 V
Typ
0.12
Unit
K/W
thermal resistance from junction to case
Symbol Parameter
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C; unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
Conditions
V
DS
= 10 V; I
D
= 360 mA
V
GS
= 0 V; V
DS
= 50 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 10 V; V
DS
= 0 V
Min
124
1.33
-
-
-
-
Typ
-
-
57
-
90
Max
-
2.8
-
280
-
Unit
V
V
A
A
nA
m
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 3.6 mA
1.83 2.33
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 12.6 A
Table 7.
AC characteristics
T
j
= 25
C; unless otherwise specified.
Symbol Parameter
C
iss
C
oss
C
rss
input capacitance
output capacitance
Conditions
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz
Min Typ Max Unit
-
-
-
315 -
105 -
1.5
-
pF
pF
pF
reverse transfer capacitance V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz
Table 8.
RF characteristics
RF characteristics in Ampleon production test circuit, T
case
= 25
C; unless otherwise specified.
Symbol
V
DS
I
Dq
P
L(AV)
G
p
D
IMD
shldr
PAR
Parameter
drain-source voltage
quiescent drain current
average output power
power gain
drain efficiency
intermodulation distortion shoulder
peak-to-average ratio
per section
f = 800 MHz
f = 800 MHz
f = 800 MHz
f = 800 MHz
f = 800 MHz
Conditions
Min
-
-
-
19
29
-
-
Typ
50
900
180
20
32
30
8.0
Max
-
-
-
-
-
27
-
Unit
V
mA
W
dB
%
dBc
dB
DVB-T (8k OFDM), class-AB
BLF898_BLF898S
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 25 July 2017
3 of 12
BLF898; BLF898S
UHF power LDMOS transistor
7. Test information
7.1 Ruggedness in Doherty operation
The BLF898 and BLF898S are capable of withstanding a load mismatch corresponding to
VSWR
40 : 1 through all phases under the following conditions: V
DS
= 50 V;
f = 800 MHz at rated load power.
7.2 Test circuit
150 mm
T2
R1
C3
80 mm
C1
C2
C6
R4
C4
C17
T1
amp00394
C16
C8
C12
C7
C9
C13
C10
C11
C14
C15
C19
R3
C5
C18
C20
C21
C22
C23
C24
R2
Printed-Circuit Board (PCB): Rogers 4350B:
r
= 3.66 F/m, height = 0.762 mm; Cu (top/bottom metalization); thickness copper
plating = 35
m.
See
Table 9
for a list of components.
Fig 1.
Component layout for production RF test circuit
Table 9.
List of components
See
Figure 1
for component layout.
Component
C1
C2
C3, C4
C5, C6
C7
C8, C9, C10, C11
C12, C13
C14, C15
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
Value
1.8 pF
100 pF
4.7
F,
50 V
100 pF
15 pF
20 pF
7.5 pF
6.2 pF
Remarks
ATC 100B
ATC 100B
TDK
ATC 100B
ATC 100B
ATC 800B
ATC 800B
ATC 800B
BLF898_BLF898S
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 25 July 2017
4 of 12
BLF898; BLF898S
UHF power LDMOS transistor
Table 9.
List of components
…continued
See
Figure 1
for component layout.
Component
C16, C17
C18, C19
C20, C23
C21, C22
C24
R1, R2
R3, R4
T1
T2
Description
electrolytic capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
wire resistor
chip resistor
coaxial balun
coaxial balun
Value
470
F,
63 V
4.7
F,
63 V
4.7
F
200 pF
220 pF
100
5.6
L = 58 mm, 25
L = 58 mm, 50
EZ 90-25
EZ 141-CU-TP
TDK: C5750X7R2A475KT/A
Murata: GRM42-256X7S475K100H530
ATC 800B
ATC 800B
Remarks
7.3 Graphical data
The following figures are measured in a narrowband RF production circuit.
7.3.1 Pulsed CW
amp00395
amp00396
1000
P
L
(W)
800
21
G
p
(dB)
20.5
60
η
D
(%)
50
20
600
19.5
400
19
200
η
D
G
p
40
30
20
18.5
10
0
0
2
4
6
8
10
12
14
P
i
(W)
16
18
0
200
400
600
800
P
L
(W)
0
1000
V
DS
= 50 V; I
Dq
= 2 x 900 mA; t
p
= 100
s;
= 10 %.
V
DS
= 50 V; I
Dq
= 2 x 900 mA; t
p
= 100
s;
= 10 %.
Fig 2.
Output power as a function of input power;
typical values
Fig 3.
Power gain and drain efficiency as function of
output power; typical values
BLF898_BLF898S
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 25 July 2017
5 of 12
