BLM6G10-30; BLM6G10-30G
W-CDMA 860 MHz - 960 MHz power MMIC
Rev. 2 — 1 March 2011
Product data sheet
1. Product profile
1.1 General description
30 W LDMOS 2-stage power MMIC for base station applications at frequencies from
860 MHz to 960 MHz. Available in Gull Wing for surface mount (SOT822-1) or flat lead
(SOT834-1).
Table 1.
Application information
Typical RF performance at T
h
= 25
C.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
f
1
= 935; f
2
= 945
V
DS
(V)
28
P
L(AV)
(W)
2
G
p
(dB)
29
D
(%)
11.5
IMD3
(dBc)
48.5
[1]
ACPR
(dBc)
52
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical 2-carrier W-CDMA performance at a frequency of 940 MHz:
Average output power = 2 W
Gain = 29 dB (typ)
Efficiency = 11.5 %
IMD3 =
48.5
dBc
ACPR =
52
dBc
Integrated temperature compensated bias
Excellent thermal stability
Biasing of individual stages is externally accessible
Integrated ESD protection
Small component size, very suitable for PA size reduction
On-chip matching (input matched to 50
,
output partially matched)
High power gain
Designed for broadband operation (860 MHz to 960 MHz)
NXP Semiconductors
BLM6G10-30; BLM6G10-30G
W-CDMA 860 MHz - 960 MHz power MMIC
2. Pinning information
2.1 Pinning
BLM6G10-30
BLM6G10-30G
GND
V
DS1
n.c.
n.c.
n.c.
RF input
n.c.
V
GS1
V
GS2
1
2
3
4
5
6
7
8
9
16 GND
15 n.c.
14 RF output/V
DS2
V
DS1
10
GND 11
13 n.c.
12 GND
001aak500
Transparent top view
Fig 1.
Pin configuration
2.2 Pin description
Table 2.
Pin
1, 11, 12, 16
2
3, 4, 5, 7, 13, 15
6
8
9
10
14
flange
Pin description
Description
GROUND
V
DS1
n.c.
RF_INPUT
V
GS1
V
GS2
V
DS1
RF_OUTPUT/V
DS2
RF_GROUND
BLM6G10-30_BLM6G10-30G
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 1 March 2011
2 of 15
NXP Semiconductors
BLM6G10-30; BLM6G10-30G
W-CDMA 860 MHz - 960 MHz power MMIC
3. Ordering information
Table 3.
Ordering information
Package
Name
BLM6G10-30
BLM6G10-30G
-
-
Description
HSOP16F: plastic, heatsink small outline package;
16 leads (flat)
HSOP16: plastic, heatsink small outline package;
16 leads
Version
SOT834-1
SOT822-1
Type number
4. Block diagram
V
DS1
RF_input
V
GS1
V
GS2
2
6
14
RF_output/V
DS2
8
9
TEMPERATURE
COMPENSATED BIAS
001aan771
Fig 2.
Block diagram of BLM6G10-30 and BLM6G10-30G
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D1
I
D2
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
first stage drain current
second stage drain current
storage temperature
junction temperature
Conditions
Min
-
0
-
-
65
-
Max
65
+13
3
9
+150
200
Unit
V
V
A
A
C
C
6. Thermal characteristics
Table 5.
Symbol
R
th(j-c)1
R
th(j-c)2
[1]
BLM6G10-30_BLM6G10-30G
Thermal characteristics
Parameter
first stage thermal resistance
from junction to case
Conditions
T
case
= 80
C;
P
L
= 2 W;
2-carrier W-CDMA
[1]
Value
7.5
2.3
Unit
K/W
K/W
second stage thermal resistance T
case
= 80
C;
P
L
= 2 W;
from junction to case
2-carrier W-CDMA
[1]
Thermal resistance is determined under specific RF operating conditions.
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 1 March 2011
3 of 15
NXP Semiconductors
BLM6G10-30; BLM6G10-30G
W-CDMA 860 MHz - 960 MHz power MMIC
7. Characteristics
Table 6.
Characteristics
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF;
3GPP test model 1; 1-64 PDPCH; f
1
= 922.5 MHz; f
2
= 932.5 MHz; f
3
= 947.5 MHz; f
4
= 957.5 MHz;
V
DS
= 28 V; I
Dq1
= 105 mA; I
Dq2
= 250 mA; T
h
= 25
C unless otherwise specified.
Symbol
P
L(AV)
G
p
RL
in
D
IMD3
ACPR
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
P
L(AV)
= 2 W
P
L(AV)
= 2 W
P
L(AV)
= 2 W
P
L(AV)
= 2 W
Conditions
Min
-
27
-
10
-
-
Typ
2
29
15
11.5
52
Max
-
31
12
-
48.5
Unit
W
dB
dB
%
dBc
dBc
third-order intermodulation distortion P
L(AV)
= 2 W
48.5 45
8. Application information
8.1 Ruggedness
The BLMG10-30 and BLM6G10-30G are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
= 32 V; I
Dq1
= 105 mA; I
Dq2
= 288 mA; P
L
= 30 W (CW).
8.2 Impedance information
Table 7.
f
MHz
850
860
880
900
920
940
960
980
[1]
[2]
Typical impedance
Z
i[1]
43.6
j0
43.5
j0.25
43.4
j0.4
43.4
j0.6
43.5
j0.9
43.6
j1.3
43.6
j1.7
43.6
j2
Z
L[2]
3
j0.8
3.2
j0.7
3.4
j0.5
3.5
j0.2
3.45
j0
3.2
j0.1
3
j0.1
2.7
j0.1
Device input impedance as measured from gate to ground.
Test circuit impedance as measured from drain to ground.
BLM6G10-30_BLM6G10-30G
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 1 March 2011
4 of 15
NXP Semiconductors
BLM6G10-30; BLM6G10-30G
W-CDMA 860 MHz - 960 MHz power MMIC
8.3 Performance curves
Performance curves are measured in a BLM6G10-30G application circuit.
001aak501
001aak502
35
G
p
(dB)
33
η
D
31
G
p
29
15
η
D
(%)
13
−46
IMD3,
ACPR
(dBc)
−48
IMD3
11
−50
9
ACPR
−52
27
7
25
880
920
960
f (MHz)
5
1000
−54
880
920
960
f (MHz)
1000
T
case
= 25
C;
V
DS
= 28 V; P
L(AV)
= 2 W; I
Dq1
= 105 mA;
I
Dq2
= 288 mA; carrier spacing = 10 MHz.
T
case
= 25
C;
V
DS
= 28 V; P
L(AV)
= 2 W; I
Dq1
= 105 mA;
I
Dq2
= 288 mA; carrier spacing = 10 MHz.
Fig 3.
2-carrier W-CDMA power gain and drain
efficiency as function of frequency;
typical values
Fig 4.
2-carrier W-CDMA adjacent channel power
ratio (5 MHz) and adjacent channel power ratio
(10 MHz) as function of frequency; typical
values
001aak504
36
G
p
(dB)
34
32
30
28
(3)
001aak503
56
η
D
(%)
48
40
32
−20
G
p
(dB)
−30
(1)
G
p
G
p
(1)
(2)
(3)
(2)
−40
24
G
p
16
8
(3) (2) (1)
ACPR
(3) (2) (1)
IMD3
26
24
22
10
−1
−50
η
D
1
10
P
L(AV)
(W)
0
10
2
−60
10
−1
1
10
P
L(AV)
(W)
10
2
V
DS
= 28 V; I
Dq1
= 105 mA; I
Dq2
= 288 mA; f = 940 MHz;
carrier spacing = 10 MHz.
(1) T
case
=
30 C
(2) T
case
= 25
C
(3) T
case
= 85
C
V
DS
= 28 V; I
Dq1
= 105 mA; I
Dq2
= 288 mA; f = 940 MHz;
carrier spacing = 10 MHz.
(1) T
case
=
30 C
(2) T
case
= 25
C
(3) T
case
= 85
C
Fig 5.
2-carrier W-CDMA power gain and drain
efficiency as function of average output power
and temperature; typical values
Fig 6.
2-carrier W-CDMA adjacent power channel
ratio and third order intermodulation distortion
as function of average output power and
temperature; typical values
© NXP B.V. 2011. All rights reserved.
BLM6G10-30_BLM6G10-30G
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 2 — 1 March 2011
5 of 15
瑞萨电子MCU
