BLP8G20S-80P
Power LDMOS transistor
Rev. 2 — 13 October 2014
Product data sheet
1. Product profile
1.1 General description
80 W LDMOS transistor for base station applications at frequencies from 1800 MHz to
2200 MHz.
Table 1.
Typical performance
Typical RF performance per section at T
case
= 25
C in a common Doherty demo board.
Test signal
2-carrier W-CDMA
f
(MHz)
1805 to 1880
1880 to 1920
2110 to 2170
[1]
I
Dq
(mA)
300
300
300
V
DS
(V)
28
28
28
P
L(AV)
(W)
14.2
14.2
14.2
G
p
(dB)
17
16.8
16
D
(%)
47
46
43
ACPR
(dBc)
30
[1]
30
[1]
30
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing = 5 MHz.
1.2 Features and benefits
Designed for broadband operation (1800 MHz to 2200 MHz)
Excellent ruggedness
High efficiency
Excellent thermal stability
Internally matched for ease of use
High power gain
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base station and multi-carrier applications in the 1800 MHz to
2200 MHz frequency range
NXP Semiconductors
BLP8G20S-80P
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
gate 2
gate 1
drain 1
drain 2
source
[1]
Simplified outline
Graphic symbol
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLP8G20S-80P
Description
Version
SOT1223-1
HSOP4F plastic, heatsink small outline package; 4 leads (flat)
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
[1]
Max
65
+13
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
5. Thermal characteristics
Table 5.
Symbol
R
th(j-case)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 10 W
Typ
Unit
0.85 K/W
BLP8G20S-80P
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 13 October 2014
2 of 11
NXP Semiconductors
BLP8G20S-80P
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C per section, unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
GS
= 0 V; I
D
= 0.5 mA
V
DS
= 10 V; I
D
= 47 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 47 mA
Min
65
1.55
-
-
-
-
-
Typ
-
1.9
-
8.5
-
0.41
0.32
Max
-
2.25
1.2
-
120
-
-
Unit
V
V
A
A
nA
S
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 1.645 A
Table 7.
RF characteristics
Test signal: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing = 5 MHz; 3GPP test model 1; 64 DPCH; f
1
= 1882.5 MHz; f
2
= 1887.5 MHz;
f
3
= 1912.5 MHz; f
4
= 1917.5 MHz; RF performance per section at V
DS
= 28 V; I
Dq
= 300 mA;
T
case
= 25
C; unless otherwise specified; in a class-AB production test circuit.
Symbol
G
p
D
RL
in
ACPR
Parameter
power gain
drain efficiency
input return loss
adjacent channel power ratio
Conditions
P
L(AV)
= 10 W
P
L(AV)
= 10 W
P
L(AV)
= 10 W
P
L(AV)
= 10 W
Min
16.5
29
-
-
Typ
17.5
33
10
32
Max
-
-
7
28
Unit
dB
%
dB
dBc
7. Test information
7.1 Ruggedness in class-AB operation
The BLP8G20S-80P is capable of withstanding a load mismatch corresponding to a
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 300 mA; P
L
= 40 W (CW); f = 1805 MHz.
7.2 Impedance information
Table 8.
Typical impedance
Measured load-pull data.
f
(MHz)
1880
1920
[1]
Z
S
[1]
()
2.3
14.0j
3.0
15.7j
Z
L
[1]
()
4.5
10.5j
4.1
10.6j
Z
S
and Z
L
defined in
Figure 1.
BLP8G20S-80P
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 13 October 2014
3 of 11
NXP Semiconductors
BLP8G20S-80P
Power LDMOS transistor
Fig 1.
Definition of transistor impedance
7.3 Test circuit
Printed-Circuit Board (PCB): Rogers RO4350;
r
= 3.48; height = 0.762 mm; thickness copper
plating = 35
m.
See
Table 9
for a list of components.
Fig 2.
Table 9.
List of components
See
Figure 2
for component layout.
Component
C1, C2, C3, C4,
C5, C6, C7, C8
C9, C10
C11, C12, C13,
C14, C15, C16
C17, C18
R1, R2
Description
Component layout
Value
11 pF
1
F,
50 V
4.7
F,
50 V
2200
F,
50 V
9.1
Remarks
ATC 600F series or capacitor of same quality
Murata or capacitor of same quality
Murata or capacitor of same quality
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
SMD resistor
SMD 0805
BLP8G20S-80P
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 13 October 2014
4 of 11
NXP Semiconductors
BLP8G20S-80P
Power LDMOS transistor
7.4 Graphical data
7.4.1 CW
V
DS
= 28 V; I
Dq
= 300 mA.
(1) f = 1880 MHz
(2) f = 1900 MHz
(3) f = 1920 MHz
Fig 3.
Power gain and drain efficiency as function of output power; typical values
7.4.2 Pulsed CW
V
DS
= 28 V; I
Dq
= 300 mA.
(1) f = 1880 MHz
(2) f = 1900 MHz
(3) f = 1920 MHz
Fig 4.
BLP8G20S-80P
Power gain and drain efficiency as function of output power; typical values
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 13 October 2014
5 of 11
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