Phototransistors
Side Look
Chip
Light Current
I
c(on )
(m A)
@V
CE
=5V
Ee=0.5mW /cm
2
Typ.
Electrical & Optical Characteristics
Saturation
Vo ltage
V
CE(sat )
( V )
@I
C
=0.1 mA
Ee=0.5mW /cm
2
Max.
Breakdow n
Voltag e V
BR(C EO )
(V)
@I
C
=0.1 mA
Ee=0 mW /cm
2
Min.
Dark Current
I
D
(n A)
@V
CE
=10V
Ee=0 mW /cm
2
Max.
Viewing
Angle
2
1/2
Part Nu mber
Materi al
Wave length
p(nm )
Lens
Colo r
BPT-NP03C1
BPT-NP13C1
BPT-NP23C1
Si-Phototransistor
(NPN)
940(400-1100)
940(400-1100)
940(400-1100)
Water
Clear
0.50
0.45
0.45
0.50
0.50
0.50
30
30
30
100
100
100
-
BPT-NP03C2
BPT-NP13C2
BPT-NP23C2
Si-Phototransistor
(NPN)
940(400-1100)
940(400-1100)
940(400-1100)
Water
Clear
0.65
0.45
0.65
0.50
0.50
0.50
30
30
30
100
100
100
-
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© 2003 American B right Optoelectronics C orporation. S pecifications subject to change without notice
.
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IR-13
