Memory ICs
BR9080AF-W / BR9080ARFV-W / BR9080ARFVM-W /
BR9016AF-W / BR9016ARFV-W / BR9016ARFVM-W
8k, 16k bit EEPROMs for direct
connection to serial ports
BR9080AF-W / BR9080ARFV-W / BR9080ARFVM-W /
BR9016AF-W / BR9016ARFV-W / BR9016ARFVM-W
The BR9080A and BR9016A series are serial EEPROMs that can be connected directly to a serial port and can be
erased and written electrically. Writing and reading is performed in word units, using four types of operation commands.
Communication occurs though CS, SK, DI, and DO pins, WC pin control is used to initiate a write disabled state, enabling
these EEPROMs to be used as one-time ROMs. During writing, operation is checked via the internal status check.
!Applications
Movie, camera, cordless telephones, car stereos, VCRs, TVs, DIP switches, and other battery-powered equipment
requiring low voltage and low current
!Features
1) BR9080AF-W / ARFV-W / ARFVM-W (8k bit) : 512 words
×16
bits
BR9016AF-W / ARFV-W / ARFVM-W (16k bit) : 1024 words
×
16bits
2) Single power supply operation
3) Serial data input and output
4) Automatic erase-before-write
5) Low current consumption
Active (5V) : 5mA (max.)
Standby (5V) : 3µA (max.)
6) Noise filter built into SK pin
7) Write protection when V
CC
is low
Inhibition on inadvertant write with the WC pin.
8) SOP8 / SSOP-B8 / MSOP8
9) High reliability CMOS process
10) 100,000 ERASE / WRITE cycles
11) 10 years Data Retention
1/12
Memory ICs
!
Block diagram
BR9080AF-W / BR9080ARFV-W / BR9080ARFVM-W /
BR9016AF-W / BR9016ARFV-W / BR9016ARFVM-W
INSTRUCTION DECODE
R/B
CS
CONTROL
CLOCK GENERATION
DETECT
SUPPLY
VOLTAGE
WRITE
DISABLE
HIGH
VOLTAGE
GENERATOR
SK
WC
DI
INSTRACTION
REGISTER
ADD
BUFFER
∗
9bit
ADD
DECORDER
∗
9bit
∗
8,192 bit
EEPROM
DO
DATA
REGISTER
16bit
R/W
AMPS
16bit
∗
BR9016A is 10bit, 16,384bit
BR9080A is 9bit, 8,192bit
!
Pin descriptions
V
CC
R/B
WC
GND
WC
GND
DO
DI
V
CC
R / B WC GND
CS
SK
DI
DO
R/B
V
CC
CS
SK
CS
SK
DI
DO
BR9080ARFVM
: MSOP8
BR9016ARFVM
BR9080AF
: SOP8
BR9016AF
Fig.1
BR9080ARFV
: SSOP-B8
BR9016ARFV
Pin No.
MSOP / SSOP
1
2
3
4
5
6
7
8
SOP
3
4
5
6
7
8
1
2
Pin name
CS
SK
DI
DO
GND
WC
R/B
V
CC
Chip Select Control
Serial Data Clock Input
Function
Op code, address, Serial Data Input
Serial Data Output
Ground 0V
Write Control Input
READY / BUSY Output
Power supply
2/12
Memory ICs
BR9080AF-W / BR9080ARFV-W / BR9080ARFVM-W /
BR9016AF-W / BR9016ARFV-W / BR9016ARFVM-W
Symbol
V
CC
Limits
−0.3∼+7.0
SOP8
450
∗
1
300
∗
2
310
∗
3
!
Absolute maximum ratings
(Ta=25°C)
Parameter
Supply voltage
Unit
V
Power dissipation
Pd
SSOP-B8
MSOP8
mW
°C
°C
V
Storage temperature
Operation temperature
Input voltage
Tstg
Topr
−
−65∼+125
−40∼+85
−0.3∼V
CC
+0.3
∗
1 Reduced by 4.5mW for each increase in Ta of 1
°
C over 25
°
C.
∗2
Reduced by 3.0mW for each increase in Ta of 1
°
C over 25
°
C.
∗3
Reduced by 3.1mW for each increase in Ta of 1
°
C over 25
°
C.
!
Recommended operating conditions
(Ta=25°C)
Parameter
Power supply voltage
Input voltage
WRITE
READ
V
IN
Symbol
V
CC
Min.
2.7
2.7
0
Typ.
−
−
−
Max.
5.5
5.5
V
CC
Unit
V
V
V
3/12
Memory ICs
BR9080AF-W / BR9080ARFV-W / BR9080ARFVM-W /
BR9016AF-W / BR9016ARFV-W / BR9016ARFVM-W
!
Electrical characteristics
BR9080AF-W / ARFV-W / ARFVM-W, BR9016AF-W / ARFV-W / ARFVM-W : 5V
(Unless otherwise noted, Ta=−40∼85°C, V
CC
=2.7V∼5.5V)
Parameter
Input low level voltage 1
Input high level voltage 1
Input low level voltage 2
Input high level voltage 2
Output low level voltage
Output high level voltage
Input leak current
Output leak current
Operating current
Standby current
SK frequency
Symbol
V
IL1
V
IH1
V
IL2
V
IH2
V
OL
V
OH
I
LI
I
LO
I
CC1
I
CC2
I
SB
f
SK
Min.
−
0.7×V
CC
−
0.8×V
CC
0
V
CC
−0.4
−1
−1
−
−
−
−
Typ.
−
−
−
−
−
−
−
−
−
−
−
−
Max.
0.3×V
CC
−
0.2×V
CC
−
0.4
V
CC
1
1
5
3
3
2
Unit
V
V
V
V
V
V
µA
µA
mA
mA
µA
MHz
DI pin
DI pin
CS, SK, WC pin
CS, SK, WC pin
I
OL
=2.1mA
I
OH
=−0.4mA
V
IN
=0V∼V
CC
V
OUT
=0V∼V
CC
, CS=V
CC
f
SK
=2MHz tE / W=10ms (WRITE)
f
SK
=2MHz (READ)
CS / SK / DI / WC=V
CC
DO, R / B=OPEN
−
Conditions
BR9080AF-W / ARFV-W / ARFVM-W, BR9016AF-W / ARFV-W / ARFVM-W : 3V
(Unless otherwise noted, Ta=−40∼85°C, V
CC
=2.7V∼3.3V)
Parameter
Input low level voltage 1
Input high level voltage 1
Input low level voltage 2
Input high level voltage 2
Output low level voltage
Output high level voltage
Input leak current
Output leak current
Operating current
Standby current
SK frequency
Symbol
V
IL1
V
IH1
V
IL2
V
IH2
V
OL
V
OH
I
LI
I
LO
I
CC1
I
CC2
I
SB
f
SK
Min.
−
0.7×V
CC
−
0.8×V
CC
0
V
CC
−0.4
−1
−1
−
−
−
−
Typ.
−
−
−
−
−
−
−
−
−
−
−
−
Max.
0.3×V
CC
−
0.2×V
CC
−
0.4
V
CC
1
1
3
0.75
2
2
Unit
V
V
V
V
V
V
µA
µA
mA
mA
µA
MHz
DI pin
DI pin
CS, SK, WC pin
CS, SK, WC pin
I
OL
=100µA
I
OH
=−100µA
V
IN
=0V∼V
CC
V
OUT
=0V∼V
CC
, CS=V
CC
f
SK
=2MHz tE / W=10ms (WRITE)
f
SK
=2MHz (READ)
CS / SK / DI / WC=V
CC
DO, R / B=OPEN
−
Conditions
Not designed for radiation resistance
4/12
Memory ICs
BR9080AF-W / BR9080ARFV-W / BR9080ARFVM-W /
BR9016AF-W / BR9016ARFV-W / BR9016ARFVM-W
!
Operating timing characteristics
BR9080AF-W / ARFV-W / ARFVM-W, BR9016AF-W / ARFV-W / ARFVM-W
(Unless otherwise noted, Ta=−40∼85°C, V
CC
=2.7V∼5.5V)
Parameter
CS setup time
CS hold time
Data setup time
Data hold time
DO rise delay time
DO fall delay time
Self-timing programming cycle
CS minimum high level time
READY / BUSY display valid time
Symbol
f
CSS
t
CSH
t
DIS
t
DIH
t
PD1
t
PD0
t
E / W
t
CS
t
SV
t
OH
t
WH
t
WL
t
WCS
t
WCH
Min.
100
100
100
100
−
−
−
250
−
0
230
230
0
0
Typ.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max.
−
−
−
−
150
150
10
−
150
150
−
−
−
−
Unit
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
ns
ns
ns
Time when DO goes HIGH-Z (via CS)
Data clock high level time
Data clock low level time
Write control setup time
Write control hold time
!
Timing chart
Synchronous Data Input Output Timing
CS
t
CS
t
WH
t
CSS
t
CSH
t
DIH
SK
t
WL
t
DIS
DI
t
PD
DO
t
PD
t
OH
WC
Fig.2
· Input data are clocked in to DI at the rising edge of the clock (SK).
· Output data will toggle on the falling edge of the SK clock.
· The WC pin does not have any effect on the READ, EWEN and EWDS operations.
5/12
微控制器 MCU
