BIPOLARICS, INC.
Part Number BRF480
MEDIUM POWER SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
DESCRIPTION AND APPLICATIONS:
Bipolarics' BRF480 is a high performance silicon bipolar
transistor intended for medium power linear and Class C
applications at VHF, UHF and microwave frequencies in 7.2
and 12V systems. Depending on package type, the BRF480
can operate at up to 0.5W. These applications include high
intermod receivers, CATV and instrumentation amplifiers as
well as pre-drivers, drivers and final stages in transmitter
applications such as cellular telephone. Package options in-
clude Dice, SOT-223 Surface Mount, Ceramic Micro-X,
0.145" Plastic SOT-103 and 0.230" power flange package.
•
High Gain Bandwidth Product
f = 8 GHz typ @ I
C
= 70 mA
t
|S
21
|
2
= 14.2 dB @ 1.0 GHz
8.2 dB @ 2.0 GHz
•
High Gain
•
Dice, Plastic, Hermetic and Surface
Mount packages available
Absolute Maximum Ratings:
SYMBOL
PARAMETERS
RATING
UNITS
V
CBO
V
CEO
V
EBO
I
C
I
C
MAX
T
J
(1)
T
STG
Collector-Base Voltage
25
V
V
V
mA
mA
o
C
o
C
C/W
PERFORMANCE DATA:
•
Electrical Characteristics (T
A
= 25
o
C)
θ
JC
Collector-Emitter Voltage
15
Emitter-Base Voltage
1.5
Collector Current (continuous)
120
Collector Current (instantaneous)
180
Junction Temperature
200
Storage Temperature
-65 to 150
Thermal Resistance
50
(1) Depends on package
SYMBOL
PARAMETERS & CONDITIONS
V
CE
= 8V, I
C
=60 mA, Class A, unless stated
UNIT
MIN.
TYP.
MAX.
f
t
Gain Bandwidth Product
Insertion Power Gain:
Micro-X
SOT-103
f = 1.0 GHz
f = 2.0 GHz
f = 1.0 GHz
I
C
= 75 mA
f = 1.0 GHz
GHz
dB
dB
dBm
8.0
14.2
8.2
27.0
|S
21
|
2
P
1d B
NF
h
FE
I
CBO
Power output at 1dB compression:
Noise Figure: V
CE
= 5V, I
C
=20 mA
dB
1.6
Forward Current Transfer Ratio: V
CE
= 5V, I
C
= 15 mA
Collector Cutoff Current : V
CB
= 8V
µA
30
100
300
0.4
C
CB
Collector Base Capacitance: V
CB
=8V
f = 1MHz
pF
.75
PAGE
2
BIPOLARICS, INC.
Part Number BRF480
MEDIUM POWER SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
TYPICAL S PARAMETERS:
S-MATRIX: Z
S
= 50.0 + J 0.0
(1)
BIAS CONDITION: V
CE
= 8 V, I
C
= 35 mA
Z
L
= 50.0 + J 0.0
(1)
Typical for microwave packages. Does not apply specifically to SOT-223.
FREQ.
GHz
S11
Mag
Ang
Mag
S21
Ang
Mag
S12
Ang
Mag
S22
Ang
S21
dB
0.20000
0.40000
0.60000
0.80000
1.00000
1.20000
1.40000
1.60000
1.80000
2.00000
2.20000
2.40000
2.60000
2.80000
3.00000
3.20000
3.40000
3.60000
3.80000
4.00000
4.20000
0.5821
0.7585
0.7244
0.7413
0.7943
0.7585
0.7161
0.7585
0.7585
0.7585
0.7852
0.7673
0.8222
0.8222
0.8511
0.8317
0.8413
0.9120
0.8128
0.8709
0.8609
-146
-168
-179
179
176
166
159
156
154
150
141
138
134
132
130
126
126
118
115
119
112
16.78
12.30
8.222
6.456
5.069
4.365
3.715
3.311
3.162
2.630
2.371
2.137
2.018
1.819
1.757
1.566
1.479
1.428
1.273
1.258
1.122
126
104
92
86
83
76
70
68
65
61
55
55
50
47
45
40
41
33
33
35
26
0.0239
0.0263
0.0354
0.0426
0.0467
0.0543
0.0602
0.0691
0.0724
0.0794
0.0841
0.0870
0.0954
0.1000
0.1109
0.1148
0.1216
0.1318
0.1303
0.1462
0.1479
42
48
52
56
64
65
67
68
70
71
71
74
73
73
76
73
75
75
74
76
72
0.3801
0.2884
0.2600
0.2600
0.2371
0.2630
0.2630
0.2691
0.2884
0.2851
0.3235
0.3054
0.3630
0.3589
0.3935
0.4315
0.3845
0.4677
0.4216
0.4415
0.4518
- 86
-122
-134
-145
-147
-152
-154
-158
-163
-165
-177
-176
180
175
180
172
171
165
159
170
156
24.5
21.8
18.3
16.2
14.1
12.8
11.4
10.4
10.0
8.4
7.5
6.6
6.1
5.2
4.9
3.9
3.4
3.1
2.1
2.0
1.0
PAGE
3
BIPOLARICS, INC.
Part Number BRF480
MEDIUM POWER SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
TYPICAL S PARAMETERS:
(1)
BIAS CONDITION: V
CE
= 8 V, I
C
= 75 mA
S-MATRIX: Z
S
= 50.0 + J 0.0
Z
L
= 50.0 + J 0.0
(1)
Typical for microwave packages. Does not apply specifically to SOT-223.
FREQ.
GHz
S11
Mag
Ang
Mag
S21
Ang
Mag
S12
Ang
Mag
S22
Ang
S21
dB
0.20000
0.40000
0.60000
0.80000
1.00000
1.20000
1.40000
1.60000
1.80000
2.00000
2.20000
2.40000
2.60000
2.80000
3.00000
3.20000
3.40000
3.60000
3.80000
4.00000
4.20000
0.6456
0.8128
0.7843
0.7952
0.7943
0.7943
0.7478
0.7943
0.7762
0.7673
0.7852
0.7762
0.8222
0.8222
0.8413
0.8317
0.8413
0.9120
0.8128
0.8709
0.8609
-156
-136
176
174
172
162
156
154
151
148
139
136
132
131
129
128
125
117
114
118
111
17.78
12.02
8.317
6.456
5.128
4.365
3.715
3.198
2.851
2.570
2.213
1.995
1.883
1.698
1.640
1.513
1.412
1.364
1.188
1.230
1.071
124
102
92
87
83
78
72
70
66
63
58
59
54
51
49
45
46
37
17
18
30
0.0169
0.0229
0.0288
0.0371
0.0426
0.0506
0.0575
0.0630
0.0707
0.0794
0.0860
0.0891
0.1000
0.1047
0.1109
0.1174
0.1244
0.1348
0.1303
0.1462
0.1479
46
54
62
68
72
73
73
74
77
77
75
78
77
77
79
76
78
75
76
79
74
0.3090
0.2630
0.2511
0.2600
0.2371
0.2630
0.2630
0.2722
0.2884
0.2851
0.3235
0.3090
0.3845
0.4265
0.4073
0.4073
0.3801
0.4677
0.4168
0.4365
0.4415
-102
-136
-145
-155
-155
-159
-169
-164
-168
-168
178
180
176
172
177
169
168
162
156
167
-154
25.0
21.6
18.4
16.2
14.2
12.8
11.4
10.1
9.1
8.2
6.9
6.0
5.5
4.6
4.3
3.6
3.0
2.7
1.5
1.8
0.6
PAGE
4
BIPOLARICS, INC.
BRF48035
Package Style 35: Micro-X 0.085" Ceramic
Part Number BRF480
BRF48070
Package Style 70: 0.070" Stripline
MEDIUM POWER SILICON MICROWAVE TRANSISTOR
5.0 MIN (ALL LEADS)
45
0.5+0.07
1.0+0.1
+0.06
0.1 -0.03
2.5
+0.4
-0.2
1.3
+0.4
-0.3
BRF48023
Package Style 23: 0.230" BeO Flange
LEAD
Package 9
Package
14,85,35 & 04
1
Emitter
Base
2
Base
Emitter
3
Emitter
4
Collector
Collector Emitter
NOTES:
(unless otherwise specified)
in
1. Dimensions are
( mm )
2. Tolerances:
in .xxx =
±
.005
mm .xx =
±
.13
3. All dimensions nominal; subject to change
without notice
PAGE
5
BIPOLARICS, INC.
BRF4809
Package Style 9: SOT-223
Part Number BRF480
BRF4802
Package Style 2: SOT-143
MEDIUM POWER SILICON MICROWAVE TRANSISTOR
BRF4801
Package Style 1: SOT-23
0.30
0.51
BRF4801J
Package Style 1J: SOT-23J
1.39
1.57
0.45
0.60
1.90
2.25
2.75
0.95
2.65
3.04
0.79
1.1
0.00
0.10
0.10
0.45
0.60
stm32/stm8
