Very Low Power CMOS SRAM
512K X 16 bit
Pb-Free and Green package materials are compliant to RoHS
BS616LV8016
n
FEATURES
Ÿ
Wide V
CC
operation voltage : 2.4V ~ 5.5V
Ÿ
Very low power consumption :
V
CC
= 3.0V
Operation current : 31mA (Max.) at 55ns
2mA (Max.) at 1MHz
Standby current : 0.8uA (Typ.) at 25
O
C
V
CC
= 5.0V
Operation current : 76mA (Max.) at 55ns
10mA (Max.) at 1MHz
Standby current : 3.5uA (Typ.) at 25
O
C
Ÿ
High speed access time :
-55
55ns(Max.) at V
CC
=3.0~5.5V
-70
70ns(Max.) at V
CC
=2.7~5.5V
Ÿ
Automatic power down when chip is deselected
Ÿ
Easy expansion with CE2, CE1 and OE options
Ÿ
I/O Configuration x8/x16 selectable by LB and UB pin.
Ÿ
Three state outputs and TTL compatible
Ÿ
Fully static operation, no clock, no refresh
Ÿ
Data retention supply voltage as low as 1.5V
n
DESCRIPTION
The BS616LV8016 is a high performance, very low power CMOS
Static Random Access Memory organized as 524,288 by 16 bits and
operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical CMOS standby
current of 0.8uA at 3.0V/25
O
C and maximum access time of 55ns at
3.0V/85
O
C.
Easy memory expansion is provided by an active LOW chip enable
(CE1), active HIGH chip enable (CE2) and active LOW output
enable (OE) and three-state output drivers.
The BS616LV8016 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS616LV8016 is available in DICE form and 48-ball BGA
package.
n
POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
BS616LV8016DC
BS616LV8016FC
BS616LV8016FI
OPERATING
TEMPERATURE
Commercial
+0
O
C to +70
O
C
Industrial
-40
O
C to +85
O
C
STANDBY
(I
CCSB1
, Max)
Operating
(I
CC
, Max)
PKG TYPE
V
CC
=3.0V
10MHz
f
Max.
V
CC
=5.0V
V
CC
=3.0V
1MHz
V
CC
=5.0V
10MHz
f
Max.
1MHz
25uA
4.0uA
9mA
39mA
75mA
1.5mA
19mA
30mA
DICE
BGA-48-0912
50uA
8.0uA
10mA
40mA
76mA
2mA
20mA
31mA
BGA-48-0912
n
PIN CONFIGURATIONS
n
BLOCK DIAGRAM
1
A
LB
2
OE
3
A0
4
A1
5
A2
6
CE2
B
DQ8
UB
A3
A4
CE1
DQ0
C
DQ9
DQ10
A5
A6
DQ1
DQ2
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
Address
Input
Buffer
10
Row
Decoder
1024
Memory Array
1024 x 8192
8192
D
VSS
DQ11
A17
A7
DQ3
VCC
E
VCC
DQ12
VSS
A16
DQ4
VSS
F
DQ14
DQ13
A14
A15
DQ5
DQ6
DQ0
.
.
.
.
.
.
DQ15
.
.
.
.
.
.
16
Data
Input
Buffer
Data
Output
Buffer
16
16
Column I/O
Write Driver
Sense Amp
512
Column Decoder
9
Address Input Buffer
16
G
DQ15
NC
A12
A13
WE
DQ7
H
A18
A8
A9
A10
A11
NC
CE2
CE1
WE
OE
UB
LB
V
CC
V
SS
Control
A14 A15 A16 A17 A18 A0 A1 A2 A3
48-ball BGA top view
Brilliance Semiconductor, Inc.
reserves the right to change products and specifications without notice.
R0201-BS616LV8016
1
Revision 2.3
May.
2006
BS616LV8016
n
PIN DESCRIPTIONS
Name
A0-A18 Address Input
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
WE Write Enable Input
Function
These 19 address inputs select one of the 524,288 x 16 bit in the RAM
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read form or write to the device. If either chip enable is not active, the device is
deselected and is in standby power mode. The DQ pins will be in the high impedance
state when the device is deselected.
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impendence state when OE is inactive.
Lower byte and upper byte data input/output control pins.
OE Output Enable Input
LB and UB Data Byte Control Input
DQ0-DQ15 Data Input/Output
Ports
V
CC
V
SS
16 bi-directional ports are used to read data from or write data into the RAM.
Power Supply
Ground
n
TRUTH TABLE
MODE
Chip De-selected
(Power Down)
CE1
H
X
X
L
CE2
X
L
X
H
H
WE
X
X
X
H
H
OE
X
X
X
H
H
LB
X
X
H
L
X
L
UB
X
X
H
X
L
L
L
H
L
L
H
DQ0~DQ7 DQ8~DQ15 V
CC
CURRENT
High Z
High Z
High Z
High Z
High Z
D
OUT
High Z
D
OUT
D
IN
X
D
IN
High Z
High Z
High Z
High Z
High Z
D
OUT
D
OUT
High Z
D
IN
D
IN
X
I
CCSB
, I
CCSB1
I
CCSB
, I
CCSB1
I
CCSB
, I
CCSB1
I
CC
I
CC
I
CC
I
CC
I
CC
I
CC
I
CC
I
CC
Output Disabled
L
Read
L
H
H
L
H
L
L
Write
L
H
L
X
H
L
NOTES: H means V
IH
; L means V
IL
; X means don’t care (Must be V
IH
or V
IL
state)
R0201-BS616LV8016
2
Revision 2.3
May.
2006
BS616LV8016
n
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
TERM
T
BIAS
T
STG
P
T
I
OUT
(1)
n
OPERATING RANGE
UNITS
V
O
PARAMETER
Terminal Voltage with
Respect to GND
Temperature Under
Bias
Storage Temperature
Power Dissipation
DC Output Current
RATING
-0.5
(2)
to 7.0
-40 to +125
-60 to +150
1.0
20
RANG
Commercial
Industrial
AMBIENT
TEMPERATURE
0
O
C to + 70
O
C
-40
O
C to + 85
O
C
V
CC
2.4V ~ 5.5V
2.4V ~ 5.5V
C
C
O
W
mA
n
CAPACITANCE
(1)
(T
A
= 25 C, f = 1.0MHz)
O
SYMBOL PAMAMETER CONDITIONS MAX. UNITS
C
IN
C
IO
Input
Capacitance
Input/Output
Capacitance
V
IN
= 0V
V
I/O
= 0V
6
8
pF
pF
1. Stresses greater than those listed under ABSOLUTE
MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2.
–2.0V
in case of AC pulse width less than 30 ns.
1. This parameter is guaranteed and not 100% tested.
n
DC ELECTRICAL CHARACTERISTICS (T
A
= -40 C to +85 C)
PARAMETER
NAME
V
CC
V
IL
V
IH
I
IL
I
LO
V
OL
V
OH
I
CC
(5)
I
CC1
I
CCSB
I
CCSB1
(6)
PARAMETER
Power Supply
O
O
TEST CONDITIONS
MIN.
2.4
-0.5
(2)
TYP.
(1)
--
MAX.
5.5
UNITS
V
Input Low Voltage
--
0.8
V
CC
+0.3
(3)
V
Input High Voltage
V
IN
= 0V to V
CC
,
CE1 = V
IH
or CE2 = V
IL
V
I/O
= 0V to V
CC
,
CE1 = V
IH
or CE2 = V
IL
or OE = V
IH
Output Low Voltage
V
CC
= Max, I
OL
= 2.0mA
2.2
--
V
Input Leakage Current
--
--
1
uA
Output Leakage Current
--
--
1
uA
--
--
0.4
V
Output High Voltage
Operating Power Supply
Current
Operating Power Supply
Current
Standby Current
–
TTL
V
CC
= Min, I
OH
= -1.0mA
CE1 = V
IL
and CE2 = V
IH
,
I
DQ
= 0mA, f =
F
MAX(4)
V
CC
=3.0V
V
CC
=5.0V
V
CC
=3.0V
V
CC
=5.0V
V
CC
=3.0V
V
CC
=5.0V
V
CC
=3.0V
V
CC
=5.0V
2.4
--
--
31
76
V
--
--
mA
CE1 = V
IL
and CE2 = V
IH
,
I
DQ
= 0mA, f = 1MHz
CE1 = V
IH
, or CE2 = V
IL
,
I
DQ
= 0mA
CE1≧V
CC
-0.2V or CE2≦0.2V,
V
IN
≧V
CC
-0.2V or V
IN
≦0.2V
--
--
2
10
mA
--
--
0.8
3.5
1.0
2.0
mA
Standby Current
–
CMOS
--
8.0
50
uA
1. Typical characteristics are at T
A
=25
O
C and not 100% tested.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: V
CC
+1.0V in case of pulse width less than 20 ns.
4. F
MAX
=1/t
RC.
5. I
CC (MAX.)
is 30mA/75mA at V
CC
=3.0V/5.0V and T
A
=70
O
C.
6. I
CCSB1(MAX.)
is 4.0uA/25uA at V
CC
=3.0V/5.0V and T
A
=70
O
C.
R0201-BS616LV8016
3
Revision 2.3
May.
2006
BS616LV8016
n
DATA RETENTION CHARACTERISTICS (T
A
= -40 C to +85 C)
SYMBOL
V
DR
I
CCDR
(3)
O
O
PARAMETER
V
CC
for Data Retention
TEST CONDITIONS
CE1≧V
CC
-0.2V or CE2≦0.2V,
V
IN
≧V
CC
-0.2V or V
IN
≦0.2V
CE1≧V
CC
-0.2V or CE2≦0.2V,
V
IN
≧V
CC
-0.2V or V
IN
≦0.2V
MIN.
1.5
TYP.
(1)
--
MAX.
--
UNITS
V
Data Retention Current
Chip Deselect to Data
Retention Time
--
0.4
4.0
uA
t
CDR
t
R
0
See Retention Waveform
t
RC (2)
--
--
ns
Operation Recovery Time
--
--
ns
1. V
CC
=1.5V, T
A
=25
O
C and not 100% tested.
2. t
RC
= Read Cycle Time.
3. I
CCDR(Max.)
is 2.0uA at T
A
=70
O
C.
n
LOW V
CC
DATA RETENTION WAVEFORM (1) (CE1 Controlled)
Data Retention Mode
V
DR
≧1.5V
V
CC
V
IH
V
CC
V
CC
t
CDR
CE1≧V
CC
- 0.2V
t
R
V
IH
CE1
n
LOW V
CC
DATA RETENTION WAVEFORM (2) (CE2 Controlled)
Data Retention Mode
V
CC
V
CC
V
DR
≧1.5V
V
CC
t
CDR
t
R
CE2≦0.2V
CE2
V
IL
V
IL
n
AC TEST CONDITIONS
(Test Load and Input/Output Reference)
n
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
MUST BE
STEADY
MAY CHANGE
FROM
“H”
TO
“L”
MAY CHANGE
FROM
“L”
TO
“H”
DON’T CARE
ANY CHANGE
PERMITTED
DOES NOT
APPLY
OUTPUTS
MUST BE
STEADY
WILL BE CHANGE
FROM
“H”
TO
“L”
WILL BE CHANGE
FROM
“L”
TO
“H”
CHANGE :
STATE UNKNOW
CENTER LINE IS
HIGH INPEDANCE
“OFF”
STATE
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing
Reference Level
Output Load
t
CLZ
, t
OLZ
, t
CHZ
, t
OHZ
, t
WHZ
Others
Vcc / 0V
1V/ns
0.5Vcc
C
L
= 5pF+1TTL
C
L
= 30pF+1TTL
ALL INPUT PULSES
1 TTL
Output
C
L(1)
V
CC
GND
10%
90%
90%
10%
→ ←
Rise Time:
1V/ns
→ ←
Fall Time:
1V/ns
1. Including jig and scope capacitance.
R0201-BS616LV8016
4
Revision 2.3
May.
2006
BS616LV8016
n
AC ELECTRICAL CHARACTERISTICS (T
A
= -40 C to +85 C)
READ CYCLE
JEDEC
PARANETER
PARAMETER
NAME
NAME
CYCLE TIME : 55ns
(V
CC
=3.0~5.5V)
MIN.
Read Cycle Time
Address Access Time
Chip Select Access Time
Chip Select Access Time
Data Byte Control Access Time
Output Enable to Output Valid
Chip Select to Output Low Z
Chip Select to Output Low Z
Data Byte Control to Output Low Z
Output Enable to Output Low Z
Chip Select to Output High Z
Chip Select to Output High Z
(CE1)
(CE2)
(CE1)
(CE2)
(LB, UB)
(CE1)
(CE2)
(LB, UB)
55
--
--
--
--
--
10
10
10
5
--
--
--
--
10
TYP.
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
MAX.
--
55
55
55
55
30
--
--
--
--
30
30
30
25
--
CYCLE TIME : 70ns
(V
CC
=2.7~5.5V)
MIN.
70
--
--
--
--
--
10
10
10
5
--
--
--
--
10
TYP.
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
MAX.
--
70
70
70
70
35
--
--
--
--
35
35
35
30
--
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
O
O
DESCRIPTION
UNITS
t
AVAX
t
AVQX
t
ELQV
t
ELQV
t
BLQV
t
GLQV
t
ELQX
t
ELQX
t
BLQX
t
GLQX
t
EHQZ
t
EHQZ
t
BHQZ
t
GHQZ
t
AVQX
t
RC
t
AA
t
ACS1
t
ACS2
t
BA
t
OE
t
CLZ1
t
CLZ2
t
BE
t
OLZ
t
CHZ1
t
CHZ2
t
BDO
t
OHZ
t
OH
Data Byte Control to Output High Z (LB, UB)
Output Enable to Output High Z
Data Hold from Address Change
n
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1
(1,2,4)
t
RC
ADDRESS
t
OH
D
OUT
t
AA
t
OH
R0201-BS616LV8016
5
Revision 2.3
May.
2006
