Ultra Low Power CMOS SRAM
256K X 16 bit
Pb-Free and Green package materials are compliant to RoHS
BS616UV4016
n
FEATURES
Ÿ
Wide V
CC
low operation voltage :
C-grade : 1.8V ~ 3.6V
I-grade : 1.9V ~ 3.6V
Ÿ
Ultra low power consumption :
V
CC
= 2.0V
Operation current : 12mA (Max.) at 100ns
1mA (Max.) at 1MHz
Standby current : 0.1uA (Typ.) at 25
O
C
V
CC
= 3.0V
Operation current : 15mA (Max.) at 100ns
2mA (Max.) at 1MHz
Standby current : 0.25uA (Typ.) at 25
O
C
Ÿ
High speed access time :
-10
100ns (Max.)
Ÿ
Automatic power down when chip is deselected
Ÿ
Easy expansion with CE and OE options
Ÿ
I/O Configuration x8/x16 selectable by LB and UB pin.
Ÿ
Three state outputs and TTL compatible
Ÿ
Fully static operation
Ÿ
Data retention supply voltage as low as 1.5V
n
DESCRIPTION
The BS616UV4016 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 262,144 by 16 bits and
operates form a wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical CMOS standby
current of 0.1uA at 2.0V/25
O
C and maximum access time of 100ns at
85
O
C.
Easy memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable (OE) and three-state output
drivers.
The BS616UV4016 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS616UV4016 is available in DICE form, JEDEC standard
44-pin TSOP II and 48-ball BGA package.
n
POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
BS616UV4016DC
BS616UV4016AC
BS616UV4016EC
BS616UV4016AI
BS616UV4016EI
Industrial
-40
O
C to +85
O
C
4.0uA
2.0uA
2.0mA
15mA
1.0mA
12mA
Commercial
+0
O
C to +70
O
C
2.0uA
1.0uA
1.5mA
13mA
0.8mA
10mA
OPERATING
TEMPERATURE
STANDBY
(I
CCSB1
, Max)
Operating
(I
CC
, Max)
PKG TYPE
V
CC
=2.0V
f
Max.
V
CC
=3.0V
V
CC
=2.0V
V
CC
=3.0V
1MHz
f
Max.
1MHz
DICE
BGA-48-0608
TSOP II-44
BGA-48-0608
TSOP II-44
n
PIN CONFIGURATIONS
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
DQ3
VCC
VSS
DQ4
DQ5
DQ6
DQ7
WE
A17
A16
A15
A14
A13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
1
A
B
C
D
E
F
G
H
LB
D8
D9
VSS
VCC
D14
D15
NC
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
6
NC
D0
D2
VCC
VSS
D6
D7
NC
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
VSS
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
A12
n
BLOCK DIAGRAM
A12
A11
A10
A9
A8
A5
A6
A7
A4
A3
Address
Input
Buffer
10
Row
Decoder
1024
Memory Array
BS616UV4016EC
BS616UV4016EI
1024 x 4096
4096
DQ0
.
.
.
.
.
.
DQ15
16
.
.
.
.
.
.
Data
Input
Buffer
16
256
Column Decoder
8
Control
Address Input Buffer
16
Column I/O
Write Driver
Sense Amp
2
OE
UB
D10
D11
D12
D13
NC
A8
3
A0
A3
A5
A17
NC
A14
A12
A9
4
A1
A4
A6
A7
A16
A15
A13
A10
5
A2
CE
D1
D3
D4
D5
WE
A11
16
Data
Output
Buffer
CE
WE
OE
UB
LB
V
CC
V
SS
A13 A14 A15 A16 A17 A0 A1 A2
48-ball BGA top view
Brilliance Semiconductor, Inc.
reserves the right to modify document contents without notice.
R0201-BS616UV4016
1
Revision 1.6
May.
2006
BS616UV4016
n
PIN DESCRIPTIONS
Name
A0-A17 Address Input
CE Chip Enable Input
Function
These 18 address inputs select one of the 262,144 x 16-bit in the RAM
CE is active LOW. Chip enable must be active when data read form or write to the
device. If chip enable is not active, the device is deselected and is in standby power
mode. The DQ pins will be in the high impedance state when the device is deselected.
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impendence state when OE is inactive.
Lower byte and upper byte data input/output control pins.
WE Write Enable Input
OE Output Enable Input
LB and UB Data Byte Control Input
DQ0-DQ15 Data Input/Output
Ports
V
CC
V
SS
There 16 bi-directional ports are used to read data from or write data into the RAM.
Power Supply
Ground
n
TRUTH TABLE
MODE
Chip De-selected
(Power Down)
CE
H
X
L
WE
X
X
H
H
OE
X
X
H
H
LB
X
H
L
X
L
UB
X
H
X
L
L
L
H
L
L
H
IO0~IO7
High Z
High Z
High Z
High Z
D
OUT
High Z
D
OUT
D
IN
X
D
IN
IO8~IO15
High Z
High Z
High Z
High Z
D
OUT
D
OUT
High Z
D
IN
D
IN
X
V
CC
CURRENT
I
CCSB
, I
CCSB1
I
CCSB
, I
CCSB1
I
CC
I
CC
I
CC
I
CC
I
CC
I
CC
I
CC
I
CC
Output Disabled
L
Read
L
H
L
H
L
L
Write
L
L
X
H
L
NOTES: H means V
IH
; L means V
IL
; X means don’t care (Must be V
IH
or V
IL
state)
R0201-BS616UV4016
2
Revision 1.6
May.
2006
BS616UV4016
n
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
TERM
T
BIAS
T
STG
P
T
I
OUT
(1)
n
OPERATING RANGE
UNITS
V
O
PARAMETER
Terminal Voltage with
Respect to GND
Temperature Under
Bias
Storage Temperature
Power Dissipation
DC Output Current
RATING
-0.5
(2)
to 5.0
-40 to +125
-60 to +150
1.0
20
RANG
Commercial
Industrial
AMBIENT
TEMPERATURE
0
O
C to + 70
O
C
-40
O
C to + 85
O
C
V
CC
1.8V ~ 3.6V
1.9V ~ 3.6V
C
C
O
W
mA
n
CAPACITANCE
(1)
(T
A
= 25 C, f = 1.0MHz)
O
SYMBOL PAMAMETER CONDITIONS MAX. UNITS
C
IN
C
IO
Input
Capacitance
Input/Output
Capacitance
V
IN
= 0V
V
I/O
= 0V
6
8
pF
pF
1. Stresses greater than those listed under ABSOLUTE
MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2.
–2.0V
in case of AC pulse width less than 30 ns.
1. This parameter is guaranteed and not 100% tested.
n
DC ELECTRICAL CHARACTERISTICS (T
A
= -40 C to +85 C)
PARAMETER
NAME
V
CC
V
IL
V
IH
I
IL
I
LO
V
OL
V
OH
I
CC
I
CC1
I
CCSB
I
CCSB1
(5)
PARAMETER
Power Supply
V
CC
=2.0V
V
CC
=3.0V
O
O
TEST CONDITIONS
MIN.
1.9
-0.3
(2)
1.4
2.2
--
TYP.
(1)
--
MAX.
3.6
0.6
0.8
UNITS
V
Input Low Voltage
--
V
Input High Voltage
V
CC
=2.0V
V
CC
=3.0V
--
V
CC
+0.3
(3)
V
Input Leakage Current
V
IN
= 0V to V
CC
V
I/O
= 0V to V
CC
,
CE= V
IH
or OE = V
IH
V
CC
= Max, I
OL
= 0.1mA
V
CC
= Max, I
OL
= 2.0mA
V
CC
=2.0V
V
CC
=3.0V
V
CC
=2.0V
V
CC
=3.0V
V
CC
=2.0V
V
CC
=3.0V
V
CC
=2.0V
V
CC
=3.0V
V
CC
=2.0V
V
CC
=3.0V
V
CC
=2.0V
V
CC
=3.0V
--
1
uA
Output Leakage Current
--
--
1
0.2
0.4
uA
Output Low Voltage
--
1.6
2.4
--
--
V
Output High Voltage
Operating Power Supply
Current
Operating Power Supply
Current
Standby Current
–
TTL
V
CC
= Min, I
OH
= -0.1mA
V
CC
= Min, I
OH
= -1.0mA
CE = V
IL
,
I
IO
= 0mA, f = F
MAX(4)
CE = V
IL
,
I
IO
= 0mA, f = 1MHz
CE = V
IH
,
I
IO
= 0mA
CE≧V
CC
-0.2V
V
IN
≧V
CC
-0.2V or V
IN
≦0.2V
--
--
12
15
V
--
mA
--
--
1.0
2.0
mA
--
--
0.1
0.25
0.5
1.0
mA
Standby Current
–
CMOS
--
2.0
4.0
uA
1. Typical characteristics are at T
A
=25
O
C and not 100% tested.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: V
CC
+1.0V in case of pulse width less than 20 ns.
4. F
MAX
=1/t
RC.
5. I
CC (MAX.)
is 10mA/13mA at V
CC
=2.0V/3.0V and T
A
=70
O
C.
6. I
CCSB1(MAX.)
is 1.0uA/2.0uA at V
CC
=2.0V/3.0V and T
A
=70
O
C.
R0201-BS616UV4016
3
Revision 1.6
May.
2006
BS616UV4016
n
DATA RETENTION CHARACTERISTICS (T
A
= -40 C to +85 C)
SYMBOL
V
DR
I
CCDR
(3)
O
O
PARAMETER
V
CC
for Data Retention
TEST CONDITIONS
CE≧V
CC
-0.2V
V
IN
≧V
CC
-0.2V or V
IN
≦0.2V
CE≧V
CC
-0.2V
V
IN
≧V
CC
-0.2V or V
IN
≦0.2V
MIN.
1.5
TYP.
(1)
--
MAX.
--
UNITS
V
Data Retention Current
Chip Deselect to Data
Retention Time
--
0.1
1.5
uA
t
CDR
t
R
0
See Retention Waveform
t
RC (2)
--
--
ns
Operation Recovery Time
--
--
ns
1. V
CC
=1.5V, T
A
=25
O
C and not 100% tested.
2. t
RC
= Read Cycle Time.
3. I
CCDR(Max.)
is 1.0uA at T
A
=70
O
C.
n
LOW V
CC
DATA RETENTION WAVEFORM (CE Controlled)
Data Retention Mode
V
DR
≧1.5V
V
CC
V
IH
V
CC
V
CC
t
CDR
CE≧V
CC
- 0.2V
t
R
V
IH
CE
n
AC TEST CONDITIONS
(Test Load and Input/Output Reference)
n
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
MUST BE
STEADY
MAY CHANGE
FROM
“H”
TO
“L”
MAY CHANGE
FROM
“L”
TO
“H”
DON’T CARE
ANY CHANGE
PERMITTED
DOES NOT
APPLY
OUTPUTS
MUST BE
STEADY
WILL BE CHANGE
FROM
“H”
TO
“L”
WILL BE CHANGE
FROM
“L”
TO
“H”
CHANGE :
STATE UNKNOW
CENTER LINE IS
HIGH INPEDANCE
“OFF”
STATE
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing
Reference Level
Output Load
t
CLZ
, t
OLZ
, t
CHZ
, t
OHZ
, t
WHZ
Others
Vcc / 0V
1V/ns
0.5Vcc
C
L
= 5pF+1TTL
C
L
= 30pF+1TTL
ALL INPUT PULSES
1 TTL
Output
C
L(1)
V
CC
GND
10%
90%
90%
10%
→ ←
Rise Time:
1V/ns
→ ←
Fall Time:
1V/ns
1. Including jig and scope capacitance.
R0201-BS616UV4016
4
Revision 1.6
May.
2006
BS616UV4016
n
AC ELECTRICAL CHARACTERISTICS (T
A
= -40 C to +85 C)
READ CYCLE
JEDEC
PARAMETER
NAME
PARANETER
NAME
CYCLE TIME : 100ns
(V
CC
=1.9~3.6V)
MIN.
TYP.
MAX.
100
--
(CE)
(LB, UB)
--
--
--
(CE)
(LB, UB)
15
15
15
(CE)
(LB, UB)
--
--
--
15
--
--
--
--
--
--
--
--
--
--
--
--
--
100
100
100
50
--
--
--
40
40
40
--
O
O
DESCRIPTION
UNITS
t
AVAX
t
AVQX
t
ELQV
t
BLQV
t
GLQV
t
ELQX
t
BLQX
t
GLQX
t
EHQZ
t
BHQZ
t
GHQZ
t
AVQX
t
RC
t
AA
t
ACS
t
BA
t
OE
t
CLZ
t
BE
t
OLZ
t
CHZ
t
BDO
t
OHZ
t
OH
Read Cycle Time
Address Access Time
Chip Select Access Time
Data Byte Control Access Time
Output Enable to Output Valid
Chip Select to Output Low Z
Data Byte Control to Output Low Z
Output Enable to Output Low Z
Chip Select to Output High Z
Data Byte Control to Output High Z
Output Enable to Output High Z
Data Hold from Address Change
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
R0201-BS616UV4016
5
Revision 1.6
May.
2006
