BSH111
N-channel enhancement mode field-effect transistor
Rev. 02 — 26 April 2002
M3D088
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
BSH111 in SOT23.
2. Features
s
s
s
s
TrenchMOS™ technology
Very fast switching
Low threshold voltage
Subminiature surface mount package.
3. Applications
s
Battery management
s
High speed switch
s
Logic level translator.
4. Pinning information
Table 1:
Pin
1
2
3
Pinning - SOT23, simplified outline and symbol
Description
gate (g)
3
d
Simplified outline
Symbol
source (s)
drain (d)
1
Top view
2
MSB003
g
s
MBB076
SOT23
Philips Semiconductors
BSH111
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2:
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Conditions
25
°C ≤
T
j
≤
150
°C
T
sp
= 25
°C;
V
GS
= 4.5 V
T
sp
= 25
°C
V
GS
= 4.5 V; I
D
= 500 mA
V
GS
= 2.5 V; I
D
= 75 mA
V
GS
= 1.8 V; I
D
= 75 mA
Typ
-
-
-
-
2.3
2.4
3.1
Max
55
335
0.83
150
4.0
5.0
8.0
Unit
V
mA
W
°C
Ω
Ω
Ω
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
Symbol Parameter
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
V
DGR
V
GS
I
D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage
drain current (DC)
T
sp
= 25
°C;
V
GS
= 4.5 V;
Figure 2
and
3
T
sp
= 100
°C;
V
GS
= 4.5 V;
Figure 2
I
DM
P
tot
T
stg
T
j
I
S
I
SM
peak drain current
total power dissipation
storage temperature
junction temperature
source (diode forward) current (DC)
peak source (diode forward) current
T
sp
= 25
°C
T
sp
= 25
°C;
pulsed; t
p
≤
10
µs
T
sp
= 25
°C;
pulsed; t
p
≤
10
µs;
Figure 3
T
sp
= 25
°C;
Figure 1
Conditions
25
°C ≤
T
j
≤
150
°C
25
°C ≤
T
j
≤
150
°C;
R
GS
= 20 kΩ
Min
-
-
-
-
-
-
-
−65
−65
-
-
Max
55
55
±10
335
212
1.3
0.83
+150
+150
335
1.3
Unit
V
V
V
mA
mA
A
W
°C
°C
mA
A
Source-drain diode
9397 750 09629
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 — 26 April 2002
2 of 13
Philips Semiconductors
BSH111
N-channel enhancement mode field-effect transistor
03aa17
120
Pder
(%)
120
I
der
(%)
80
03aa25
80
40
40
0
0
50
100
150
Tsp (°C)
200
0
0
50
100
150
200
Tsp
(°C)
P
tot
P
der
=
----------------------
×
100%
P
°
tot
(
25 C
)
V
GS
≥
4.5 V
I
D
I
der
=
------------------
×
100%
-
I
°
D
(
25 C
)
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
10
ID
(A)
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
03aa71
Limit RDSon = VDS/ ID
1
tp = 10
µ
s
100
µ
s
10-1
1 ms
DC
10 ms
100 ms
10-2
1
10
102
VDS (V)
T
sp
= 25
°C;
I
DM
is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09629
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 — 26 April 2002
3 of 13
Philips Semiconductors
BSH111
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4:
Symbol
R
th(j-sp)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
solder point
thermal resistance from junction to
ambient
Conditions
mounted on metal clad
substrate;
Figure 4
minimum footprint; mounted on
printed circuit board
Min
-
-
Typ
-
350
Max
150
-
Unit
K/W
K/W
7.1 Transient thermal impedance
103
Zth(j-sp)
(K/W)
03aa69
102
δ
= 0.5
0.2
0.1
10
0.05
0.02
tp
T
t
P
δ
=
tp
T
single pulse
1
10-5
10-4
10-3
10-2
10-1
1
10
tp (s)
Mounted on metal clad substrate.
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
9397 750 09629
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 — 26 April 2002
4 of 13
Philips Semiconductors
BSH111
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
T
j
= 25
°
C unless otherwise specified
Symbol
V
(BR)DSS
Parameter
drain-source breakdown
voltage
Conditions
I
D
= 10
µA;
V
GS
= 0 V
T
j
= 25
°C
T
j
=
−55 °C
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°C
T
j
= 150
°C
T
j
=
−55 °C
I
DSS
drain-source leakage current
V
DS
= 44 V; V
GS
= 0 V
T
j
= 25
°C
T
j
= 150
°C
I
GSS
R
DSon
gate-source leakage current
drain-source on-state
resistance
V
GS
=
±8
V; V
DS
= 0 V
V
GS
= 2.5 V; I
D
= 75 mA;
Figure 7
and
8
T
j
= 25
°C
T
j
= 150
°C
V
GS
= 4.5 V; I
D
= 500 mA;
Figure 7
and
8
T
j
= 25
°C
V
GS
= 1.8 V; I
D
= 75 mA;
Figure 7
and
8
T
j
= 25
°C
Dynamic characteristics
g
fs
Q
g(tot)
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
on
t
off
forward transconductance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on time
turn-off time
V
DD
= 50 V; R
D
= 250
Ω;
V
GS
= 10 V; R
G
= 50
Ω;
R
GS
= 50
Ω
V
GS
= 0 V; V
DS
= 10 V;
f = 1 MHz;
Figure 12
V
DS
= 10 V; I
D
= 200 mA;
Figure 11
I
D
= 0.5 A; V
DS
= 44 V;
V
GS
= 8 V;
Figure 14
100
-
-
-
-
-
-
-
-
380
1.0
0.05
0.5
17
7
4
4
11
-
-
-
-
40
30
10
10
15
mS
nC
nC
nC
pF
pF
pF
ns
ns
-
3.1
8
Ω
-
2.3
4
Ω
-
-
2.4
-
5
7.4
Ω
Ω
-
-
-
0.01
-
10
1.0
10
100
µA
µA
nA
0.4
0.3
-
1.0
-
-
1.3
-
2.5
V
V
V
55
50
75
-
-
-
V
V
Min
Typ
Max
Unit
Static characteristics
9397 750 09629
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 — 26 April 2002
5 of 13
ARM技术
