BSN20BK
18 December 2014
SO
T2
3
60 V, N-channel Trench MOSFET
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
•
•
•
•
Logic-level compatible
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection: 2 kV HBM
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; T
sp
= 25 °C
Static characteristics
R
DSon
drain-source on-state
resistance
[1]
[1]
Conditions
T
j
= 25 °C
Min
-
-20
-
-
Typ
-
-
-
-
Max
60
20
265
330
Unit
V
V
mA
mA
V
GS
= 10 V; I
D
= 200 mA; T
j
= 25 °C
-
2.1
2.8
Ω
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .
2
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NXP Semiconductors
BSN20BK
60 V, N-channel Trench MOSFET
5. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G
S
D
gate
source
drain
1
2
S
017aaa255
Simplified outline
3
Graphic symbol
D
G
TO-236AB (SOT23)
6. Ordering information
Table 3.
Ordering information
Package
Name
BSN20BK
TO-236AB
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
7. Marking
Table 4.
Marking codes
Marking code
[1]
Type number
BSN20BK
[1]
%4S
% = placeholder for manufacturing site code
BSN20BK
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
18 December 2014
2 / 16
NXP Semiconductors
BSN20BK
60 V, N-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; T
amb
= 100 °C
V
GS
= 10 V; T
sp
= 25 °C
I
DM
P
tot
peak drain current
total power dissipation
T
amb
= 25 °C; single pulse; t
p
≤ 10 µs
T
amb
= 25 °C
T
sp
= 25 °C
T
j
T
amb
T
stg
I
S
junction temperature
ambient temperature
storage temperature
[2]
[1]
[1]
[1]
Conditions
T
j
= 25 °C
Min
-
-20
-
-
-
-
-
-
-
-55
-55
-65
Max
60
20
265
170
330
0.9
310
402
1672
150
150
150
Unit
V
V
mA
mA
mA
A
mW
mW
mW
°C
°C
°C
Source-drain diode
source current
[1]
[2]
T
amb
= 25 °C
[1]
-
200
2
mA
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
017aaa123
120
P
der
(%)
80
120
I
der
(%)
80
017aaa124
40
40
0
- 75
- 25
25
75
125
T
j
(°C)
175
0
- 75
- 25
25
75
125
T
j
(°C)
175
Fig. 1.
Normalized total power dissipation as a
function of junction temperature
Fig. 2.
Normalized continuous drain current as a
function of junction temperature
BSN20BK
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
18 December 2014
3 / 16
NXP Semiconductors
BSN20BK
60 V, N-channel Trench MOSFET
1
I
D
(A)
10
-1
Limit R
DSon
= V
DS
/I
D
aaa-015759
(1)
(2)
(3)
(4)
(5)
(6)
10
-2
(7)
10
-3
10
-1
1
10
V
DS
(V)
10
2
I
DM
= single pulse
(1) t
p
= 10 µs
(2) t
p
= 100 µs
(3) t
p
= 1 ms
(4) t
p
= 10 ms
(5) DC; T
sp
= 25 °C
(6) t
p
= 100 ms
(7) DC; T
amb
= 25 °C; drain mounting pad 1 cm
Fig. 3.
2
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
[1]
[2]
Conditions
in free air
t≤5s
[1]
[2]
[2]
Min
-
-
-
-
Typ
351
271
210
65
Max
404
311
241
75
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .
2
BSN20BK
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
18 December 2014
4 / 16
NXP Semiconductors
BSN20BK
60 V, N-channel Trench MOSFET
10
3
aaa-014128
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.25
10
2
0
10
10
-3
0.01
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10
3
aaa-014129
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.50
10
2
0.33
0.20
0.05
0.01
0.25
0.10
0.02
0
10
10
-3
10
-2
10
-1
2
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for drain 1 cm
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BSN20BK
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
18 December 2014
5 / 16
stm32/stm8
