BSP317P
SIPMOS
Small-Signal-Transistor
Feature
•
P-Channel
•
Enhancement mode
•
Logic Level
•
dv/dt rated
Drain
pin 2/4
Product Summary
V
DS
R
DS(on)
I
D
-250
4
-0.43
PG-SOT223
4
V
Ω
A
Qualified according to AEC Q101
•
Halogenfree according to IEC61249221
Gate
pin1
Source
pin 3
2
1
3
VPS05163
Type
BSP317P
Package
PG-SOT223
Tape and Reel Information
H6327:
1000 pcs/reel
Marking
Packaging
BSP317P
Non dry
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
-0.43
-0.34
A
Pulsed drain current
T
A
=25°C
I
D puls
-1.72
Reverse diode dv/dt
I
S
=-0.43A,
V
DS
=-200V, di/dt=-200A/µs,
T
jmax
=150°C
dv/dt
6
kV/µs
Gate source voltage
V
GS
±20
V
Power dissipation
T
A
=25°C
P
tot
1.8
W
Operating and storage temperature
T
j ,
T
stg
IEC climatic category; DIN IEC 68-1
ESD Class
-55... +150
55/150/56
°C
JESD22-A114-HBM
Class 1b
2.4
5
Rev.1.6
Page 1
20120402
BSP317P
Thermal Characteristics
Parameter
Characteristics
Symbol
min.
Values
typ.
max.
Unit
Thermal resistance, junction - soldering point
(Pin 4)
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJS
R
thJA
-
15
25
K/W
-
-
80
48
115
70
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0,
I
D
=-250µA
Symbol
min.
V
(BR)DSS
V
GS(th)
I
DSS
-
-
I
GSS
R
DS(on)
R
DS(on)
-
-
-
-250
-1
Values
typ.
-
-1.5
max.
-
-2
Unit
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=-370µA
Zero gate voltage drain current
V
DS
=-250V,
V
GS
=0,
T
j
=25°C
V
DS
=-250V,
V
GS
=0,
T
j
=150°C
µA
-0.1
-10
-10
3.3
3
-0.2
-100
-100
5
4
nA
Ω
Gate-source leakage current
V
GS
=-20V,
V
DS
=0
Drain-source on-state resistance
V
GS
=-4.5V,
I
D
=-0.39A
Drain-source on-state resistance
V
GS
=-10V,
I
D
=-0.43A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev.2.4
Page 2
20120402
BSP317P
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
DD
=-200V,
I
D
=-0.43A,
V
GS
=0 to -10V
V
DD
=-200V,
I
D
=-0.43A
Symbol
Conditions
min.
Values
typ.
0.76
210
30
13.4
5.7
11.1
254
67
max.
-
262
37
16.7
8.5
16.6
381
100
Unit
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
|V
DS
|≥2*|I
D
|*R
DS(on)max
,
0.38
I
D
=-0.34A
V
GS
=0,
V
DS
=-25V,
f=1MHz
S
pF
-
-
-
-
-
-
-
V
DD
=-30V,
V
GS
=-10V,
I
D
=-0.43A,
R
G
=6Ω
ns
-
-
-
-
-0.5
-4
-11.6
-2.8
-0.65 nC
-5.2
-15.1
-
V
V
(plateau)
V
DD
=-200V,
I
D
=-0.43A
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
I
SM
Inverse diode forward voltage
V
SD
Reverse recovery time
t
rr
Reverse recovery charge
Q
rr
V
GS
=0,
I
F
=-0.43A
V
R
=-125V,
I
F =
l
S
,
di
F
/dt=100A/µs
I
S
T
A
=25°C
-
-
-
-
-
-
-
-0.84
92
210
-0.43 A
-1.72
-1.2
138
315
V
ns
nC
Rev.2.4
Page 3
20120402
BSP317P
1 Power dissipation
P
tot
=
f
(TA )
1.9
BSP 317 P
2 Drain current
I
D
=
f
(TA )
parameter: |V
GS
|
≥
10V
-0.5
BSP 317 P
W
1.6
A
-0.4
1.4
-0.35
P
tot
I
D
20
40
60
80
100
120
1.2
1
0.8
0.6
0.4
0.2
0
0
-0.3
-0.25
-0.2
-0.15
-0.1
-0.05
0
0
°C
160
20
40
60
80
100
120
°C
160
T
A
T
A
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A = 25°C
-10
1
BSP 317 P
4 Transient thermal impedance
Z
thJA
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
2
BSP 317 P
K/W
A
t
p = 140.0µs
10
1
-10
0
D
Z
thJA
/
I
I
D
on
)
=
V
DS
1 ms
10
0
-10
-1
DS
(
10 ms
10
-1
D = 0.50
0.20
10
-2
0.10
0.05
-10
-2
DC
10
-3
R
0.02
single pulse
0.01
-10
-3 -1
-10
-10
0
-10
1
-10
2
V
-10
3
10
-4 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
V
DS
Rev.2.4
Page 4
t
p
20120402
BSP317P
5 Typ. output characteristic
I
D
=
f
(V
DS
)
parameter:
T
j =25°C, -V
GS
1.6
6 Typ. drain-source on resistance
R
DS(on)
=
f
(I
D
)
parameter:
V
GS
;
T
j =25°C, -V
GS
10
R
DS(on)
-I
D
10V
A
5V
4.4V
3.6V
3.2V
1.2
2.8V
2.4V
1
2.2V
Ω
8
7
6
5
4
3
2.2V
2.4V
2.8V
3.2V
3.6V
4.4V
5V
10V
0.8
0.6
0.4
2
0.2
1
0
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
0.2
0.4
0.6
0.8
1
1.2
A
1.6
-V
DS
-I
D
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
); |V
DS|
≥
2 x |I
D
| x
R
DS(on)max
parameter:
T
j
= 25 °C
1.6
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter:
T
j =25°C
1.4
S
A
1.2
1.1
1.2
1
-I
D
g
fs
V
1
0.9
0.8
0.8
0.7
0.6
0.6
0.5
0.4
0.4
0.3
0.2
0.2
0.1
0
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.6
0
0
0.2
0.4
0.6
0.8
1
1.2
A
1.6
-V
GS
Rev.2.4
Page 5
-I
D
20120402
