SMD Type
PNP Silicon Switching Transistors
BSS80,BSS82
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
+0.1
2.4
-0.1
High DC current gain: 0.1mA to 500 mA.
Low collector-emitter saturation voltage.
+0.1
1.3
-0.1
Features
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation,T
S
= 77
Junction temperature
Storage temperature
Junction - soldering point
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
R
thJS
BSS80
40
60
5
800
1
100
200
330
150
-65 to +150
220
K/W
BSS82
60
Unit
V
V
V
mA
A
mA
mA
mW
0-0.1
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1
SMD Type
BSS80,BSS82
Electrical Characteristics Ta = 25
Parameter
Collector-emitter breakdown
voltage
BSS80
BSS82
V
(BR)CBO
I
C
= 10 ìA, I
E
= 0
V
(BR)EBO
I
E
= 10 ìA, I
C
= 0
I
CBO
I
EBO
BSS80/82B
BSS80/82C
BSS80/82B
BSS80/82C
DC current gain *
BSS80/82B
BSS80/82C
BSS80/82B
BSS80/82C
BSS80/82B
BSS80/82C
Collector-emitter saturation voltage *
V
CE(sat)
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
Base-emitter saturation voltage
Transition frequency
Collector-base capacitance
Delay time
Rise time
Storage time
Fall time
* Pulse test: t
300ìs, D = 2%.
*
V
BE(sat)
f
T
Ccb
td
tr
tstg
tf
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 20 mA, V
CE
= 20 V, f = 100 MHz
V
CB
= 10 V, f = 1 MHz
V
CC
= 30 V, I
C
= 150 mA, I
B1
= 15 mA,V
BE(off)
= 0.5 V
V
CC
= 30 V, I
C
= 150 mA, I
B1
= 15 mA,V
BE(off)
= 0.5 V
V
CC
= 30 V, I
C
= 150 mA, I
B1
= I
B2
= 15 mA,
V
CC
= 30 V, I
C
= 150 mA, I
B1
= I
B2
= 15 mA,
I
C
= 500 mA, V
CE
= 10 V
h
FE
I
C
= 10 mA, V
CE
= 10 V
I
C
= 1 mA, V
CE
= 10 V
V
CB
= 50 V, I
E
= 0
V
CB
= 50 V, I
E
= 0 , T
A
= 150
Emitter cutoff current
V
EB
= 3 V, I
C
= 0
I
C
= 100 ìA, V
CE
= 10 V
Symbol
Testconditons
Transistors
IC
Min
40
60
60
5
Typ
Max
Unit
V
V
V
V
(BR)CEO
I
C
= 10 mA, I
B
= 0
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
10
10
10
40
75
40
100
40
100
nA
ìA
nA
I
C
= 150 mA, V
CE
= 10 V
40
100
40
50
120
300
0.4
1.6
1.3
2.6
250
6
10
40
80
30
MHz
pF
ns
ns
ns
ns
V
h
FE
Classification
TYPE
Rank
Marking
TYPE
Rank
Marking
B
CLs
B
CHs
BSS82
C
CMs
BSS80
C
CJs
2
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