BT134W-600
4Q Triac
14 June 2016
Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT223 surface-mountable plastic package intended for
use in applications requiring high bidirectional transient and blocking voltage capability and high
thermal cycling performance.
2. Features and benefits
•
•
•
•
•
High blocking voltage capability
High noise immunity suitable for noisy applications
Planar passivated for voltage ruggedness and reliability
Surface-mountable package
Triggering in all four quadrants
3. Applications
•
•
General purpose low power motor control
General purpose switching and phase control
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
sp
≤ 108 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 9
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 9
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 9
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 9
-
-
-
-
Typ
-
-
-
-
-
5
8
11
30
Max
600
1
10
11
125
35
35
35
70
Unit
V
A
A
A
°C
mA
mA
mA
mA
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
I
GT
junction temperature
gate trigger current
Static characteristics
WeEn Semiconductors
BT134W-600
4Q Triac
Symbol
I
H
V
T
dV
D
/dt
Parameter
holding current
on-state voltage
rate of rise of off-state
voltage
rate of change of
commutating voltage
Conditions
V
D
= 12 V; T
j
= 25 °C;
Fig. 11
I
T
= 2 A; T
j
= 25 °C;
Fig. 12
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
V
D
= 400 V; T
j
= 95 °C; dI
com
/dt = 1.8 A/
ms; I
T
= 1 A; gate open circuit
Min
-
-
100
Typ
5
1.2
250
Max
15
1.5
-
Unit
mA
V
V/µs
Dynamic characteristics
dV
com
/dt
-
50
-
V/µs
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
4
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
main terminal 2
1
2
3
Simplified outline
4
Graphic symbol
T2
sym051
T1
G
SC-73 (SOT223)
6. Ordering information
Table 3. Ordering information
Type number
BT134W-600
Package
Name
SC-73
Description
plastic surface-mounted package with increased heatsink; 4
leads
Version
SOT223
7. Marking
Table 4. Marking codes
Type number
BT134W-600
Marking code
BT134W 60
BT134W-600
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
14 June 2016
2 / 16
WeEn Semiconductors
BT134W-600
4Q Triac
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
2
Conditions
Min
-
Max
600
1
10
11
0.5
50
50
50
10
2
5
0.5
150
125
aaa-011027
Unit
V
A
A
A
A²s
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
full sine wave; T
sp
≤ 108 °C;
Fig. 1; Fig. 2;
Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; SIN
I
G
= 0.2 A
-
-
-
-
-
-
-
-
I t
dI
T
/dt
2
I
GM
P
GM
P
G(AV)
T
stg
T
j
12
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
aaa-011029
-
-
over any 20 ms period
-
-40
-
1.2
I
T(RMS)
I
T(RMS)
(A)
10
8
6
4
2
0
10
-2
108 °C
(A)
0.8
0.4
10
-1
1
10
surge duration (s)
0
-50
0
50
100
T
sp
(°C)
150
f = 50 Hz; T
sp
= 108 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
Fig. 2. RMS on-state current as a function of solder
point temperature; maximum values
BT134W-600
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
14 June 2016
3 / 16
WeEn Semiconductors
BT134W-600
4Q Triac
1.2
P
tot
(W)
0.8
aaa-011026
conduction
angle,
α
(degrees)
30
60
90
120
180
form
factor
a
2.816
1.967
1.570
1.329
1.110
107
T
sp(max)
(°C)
113
α
α = 180 °
120 °
90 °
60 °
30 °
α
0.4
119
0
0
0.2
0.4
0.6
0.8
1.0
I
T(RMS)
(A)
1.2
125
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
I
TSM
(A)
10
12
003aae960
8
6
4
2
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
0
1
10
10
2
10
3
number of cycles
10
4
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT134W-600
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
14 June 2016
4 / 16
WeEn Semiconductors
BT134W-600
4Q Triac
10
3
I
T
I
TSM
(A)
aaa-011030
I
TSM
t
T
T
j
= 25 °C max
10
2
(1)
(2)
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
(2) T2- G+ quadrant limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
BT134W-600
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
14 June 2016
5 / 16
