BTA10, BTB10
T1035, T1050
Datasheet
10 A Snubberless™, logic level and standard Triacs
A2
Features
•
•
•
•
•
•
Medium current Triac
Low thermal resistance with clip bonding
Low thermal resistance insulation ceramic for insulated BTA
High commutation (4Q) or very high commutation (3Q, Snubberless™)
capability
BTA series UL1557 certified (file ref: 81734)
Packages are RoHS (2002/95/EC) compliant
G
A1
A2
A2
A1
G
A1
A2
G
TO-220AB
A2
TO-220AB Ins.
Description
Available either in through-hole or surface mount packages, the BTA10, BTB10 and
T10xx Triac series are suitable for general purpose mains power AC switching. They
can be used as ON/OFF function in applications such as static relays, heating
regulation or induction motor starting circuit. They are also recommended for phase
control operations in light dimmers and appliance motors speed controllers.
The Snubberless™ versions (W suffix and T10xx) are especially recommended for
use on inductive loads, because of their high commutation performance. By using an
internal ceramic pad, the Snubberless™ series provide an insulated tab (rated at
2500 V
RMS
) complying with UL standards (file reference: E81734).
D²PAK
A2
A1
G
Product status link
BTA10, BTB10, T1035, T1050
Product summary
I
T(RMS)
V
DRM
/V
RRM
I
GT
10 A
600 and 800 V
25 to 50 mA
DS3165
-
Rev 8
-
March 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
BTA10, BTB10, T1035, T1050
Characteristics
1
Characteristics
Table 1.
Absolute maximum ratings
Symbol
I
T(RMS)
RMS on-state current (full sine wave)
Non repetitive surge peak on-state current (full cycle, T
j
initial = 25 °C)
I
2
t value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤ 100 ns
Non repetitive surge peak off-state voltage
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Parameters
TO-220AB
TO-220AB Ins.
F = 50 Hz
F = 60 Hz
t
p
= 10 ms
F = 120 Hz
t
p
= 10 ms
t
p
= 20 µs
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
c
= 105 °C
T
c
= 95 °C
t
p
= 20 ms
t
p
= 16.7 ms
Value
10
100
105
55
50
V
DRM
/V
RRM
+
100
4
1
-40 to +150
-40 to +125
A
A
2
s
A/µs
Unit
A
I
TSM
I
2
t
dl/dt
V
DSM
/V
RSM
I
GM
P
G(AV)
T
stg
T
j
V
A
W
°C
°C
Table 2.
Static electrical characteristics
Symbol
V
T
(1)
V
TO
R
D
I
DRM
/I
RRM
Test conditions
I
TM
= 14 A, t
p
= 380 µs
threshold on-state voltage
Dynamic resistance
V
DRM
= V
RRM
T
j
25 °C
125 °C
125 °C
25 °C
125 °C
Max.
Max.
Max.
Max.
Value
1.55
0.85
40
5
1
Unit
V
V
mΩ
µA
mA
1. For both polarities of A2 referenced to A1
Table 3.
Electrical characteristics (T
j
= 25 °C, unless otherwise specified) - Snubberless™ (3 quadrants)
BTA10-xCW
BTB10-xCW
35
1.3
0.2
35
50
80
500
60
50
70
80
1000
T1050
BTA10-xBW
BTB10-xBW
50
mA
V
V
mA
mA
V/µs
Unit
Symbol
Parameters
Quadrant
T1035
I
GT
V
GT
V
GD
I
H
I
L
dV/dt
(2)
V
D
= 12 V, R
L
= 33 Ω
V
D
= V
DRM
, R
L
= 3,3 kΩ, T
j
= 125 °C
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 % V
DRM
gate open, T
j
= 125 °C
I - II - III
I - II - III
I - II - III
I - II - III
I - III
II
Max.
Max.
Min.
Max.
Max.
Max.
Min.
DS3165
-
Rev 8
page 2/12
BTA10, BTB10, T1035, T1050
Characteristics
Symbol
Parameters
Quadrant
T1035
BTA10-xCW
BTB10-xCW
5.5
T1050
BTA10-xBW
BTB10-xBW
9
A/ms
Unit
(dI/dt)c
(2)
Without snubber, T
j
= 125 °C
1. Minimum I
GT
is guaranteed at 5 % of I
GT
max.
2. For both polarities of A2 referenced to A1
Min.
Table 4.
Electrical characteristics (T
j
= 25 °C, unless otherwise specified) - standard Triac (4 quadrants)
Symbol
Parameters
Quadrant
I - II - III
V
D
= 12 V, R
L
= 33 Ω
IV
All
V
D
= V
DRM
, R
L
= 3,3 kΩ, T
j
= 125 °C
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 % V
DRM
gate open, T
j
= 125 °C
(dI/dt)c = 4.4 A/ms, T
j
= 125 °C
I - II - III
I - II - III
I - III
II
Max.
Max.
Max.
Min.
Max.
Max.
Max.
Min.
Min.
25
40
80
200
5
Value
C
25
50
1.3
0.2
50
50
100
400
10
B
50
100
Unit
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt
(2)
(dV/dt)c
(2)
mA
V
V
mA
mA
V/µs
V/µs
1. Minimum I
GT
is guaranteed at 5 % of I
GT
max.
2. For both polarities of A2 referenced to A1
Table 5.
Thermal resistance
Symbol
R
th(j-c)
(typ.)
Junction to case (AC)
Junction to ambient (S
(1)
= 2 cm²)
Junction to ambient
Parameters
TO-220AB / D²PAK
TO-220AB insulated
D²PAK
TO-220AB / TO-220AB ins
Value
1.5
2.4
45
60
°C/W
Unit
R
th(j-a)
(max.)
1. Copper surface under tab.
DS3165
-
Rev 8
page 3/12
BTA10, BTB10, T1035, T1050
Characteristics (curves)
1.1
Characteristics (curves)
Figure 3.
RMS on-state current versus case temperature
(full cycle)
I
T(RMS)
(A)
12
11
10
9
8
7
6
5
4
3
2
BTB/T10
BTA
Figure 2.
Maximum power dissipation versus on-state
RMS current (full cycle)
P(W)
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
I
T
(RMS)
(A)
5
6
7
8
9
10
1
0
0
25
T
c(°C)
50
75
100
125
Figure 4.
Relative variation of thermal impedance versus
pulse duration
K = [Z
th
/R
th
]
1E+0
Zth(j-c)
Figure 5.
On-state characteristics (maximum values)
I
TM
(A)
100
Tj max.
Vto = 0.85 V
Rd = 40 mΩ
Tj = Tj max.
10
Zth(j-a)
Tj = 25 °C
1E-1
1
1E-2
1E-3
1E-2
1E-1
V
TM
(V)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
t
p(s)
1E+0
1E+1
1E+2
5E+2
0.5
Figure 6.
Surge peak on-state current versus number of
cycles
Figure 7.
Non repetitive surge peak on-state current
versus sinusoidal pulse width (t
P
< 10 ms)
I
TSM
(A)
1000
T
j
initial=25°C
110
100
90
80
70
60
50
40
30
20
10
0
I
TSM
(A)
Non repetitive
T
j
initial=25°C
t=20ms
I
TSM
dI/dt limitation:
50A/µs
One cycle
100
Repetitive
T
C
=95°C
Number of cycles
1
10
100
1000
10
0.01
t
p
(ms)
0.10
1.00
10.00
DS3165
-
Rev 8
page 4/12
BTA10, BTB10, T1035, T1050
Characteristics (curves)
Figure 8.
Relative variation of gate trigger current, holding
current and latching current versus junction temperature
(typical values)
I
GT
,I
H
,I
L
[Tj] / I
GT
,I
H
,I
L
[Tj = 25 °C]
2.5
2.0
I
GT
Figure 9.
Relative variation of critical rate of decrease of
main current versus (dV/dt)c (typical values)
(dl/dt)c [(dV/dt)c / specified (dl/dt)c
2.0
1.8
1.6
1.4
1.2
1.0
BW/CW/T10xx
B
C
1.5
1.0
0.5
0.0
-40
T
j
(°C)
I
H
and I
L
0.8
0.6
0.4
0.1
1.0
(dV/dt)c (V/µs)
10.0
100.0
-20
0
20
40
60
80
100
120
140
Figure 10.
Relative variation of critical rate of decrease of
main current versus junction temperature
(dl/dt)c [Tj] / (dl/dt)c [Tj = 125 °C]
Figure 11.
D²PAK thermal resistance junction to ambient
versus copper surface under tab
R
th(j-a)
(°C/W)
D²PAK
80
70
60
50
40
30
6
5
4
3
2
Epoxy printed board FR4, copper thickness = 35 µm
20
1
0
Tj(°C)
10
0
0
5
10
15
20
25
30
S
Cu
(cm²)
35
40
0
25
50
75
100
125
DS3165
-
Rev 8
page 5/12
