CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C601E3-A
Issued Date : 2004.09.16
Revised Date :
Page No. : 1/4
BTA1952E3
Features
•
Low V
CE
(sat), V
CE
(sat)=-0.5 V (typical), at I
C
/ I
B
= -3A / -0.15A
•
Excellent DC current gain characteristics
•
Wide SOA
Symbol
BTA1952E3
Outline
TO-220AB
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1
.
Single Pulse Pw=10ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
(DC)
I
C
(Pulse)
I
B
Pd(T
A
=25℃)
Pd(T
C
=25℃)
Tj
Tstg
Limits
-100
-80
-5
-5
-8
-1
2
40
150
-55~+150
Unit
V
V
V
*1
A
A
W
°C
°C
BTA1952E3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CEO
I
CBO
I
EBO
*V
CE(sat)
*V
CE(sat)
*V
CE(sat)
*V
BE(sat)
*h
FE
1
*h
FE
2
f
T
Min.
-80
-
-
-
-
-
-
100
120
10
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-10
-10
-0.6
-0.8
-1.3
-1.5
-
390
-
Unit
V
µA
µA
V
V
V
V
-
-
MHz
Spec. No. : C601E3-A
Issued Date : 2004.09.16
Revised Date :
Page No. : 2/4
Test Conditions
I
C
=-10mA, I
B
=0
V
CB
=-100V, I
E
=0
V
EB
=-5V, I
C
=0
I
C
=-1A, I
B
=-10mA
I
C
=-3A, I
B
=-150mA
I
C
=-4A, I
B
=-200mA
I
C
=-3A, I
B
=-150mA
V
CE
=-3V, I
C
=-500mA
V
CE
=-2V, I
C
=-1A
V
CE
=-4V, I
C
=-1A, f=1MHz
*Pulse Test : Pulse Width
≤380µs,
Duty Cycle≤2%
Classification of h
FE
2
Rank
Range
Q
120~270
R
180~390
Ordering Information
Device
BTA1952E3
Package
TO-220AB
Shipping
Tube
BTA1952E3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
Saturation Voltage---(mV)
VCE=4V
Spec. No. : C601E3-A
Issued Date : 2004.09.16
Revised Date :
Page No. : 3/4
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
Current Gain---
HFE
100
10
100
1
10
100
1000
Collector Current---IC(mA)
10000
1
1
10
100
1000
Collector Current---IC(mA)
10000
On Voltage vs Collector Current
10000
VBE(on)@VCE=4V
Power Derating Curve
2.5
Power Dissipation---PD(W)
2
1.5
1
0.5
0
On Voltage---(mV)
1000
100
0.1
1
10
100
1000
Collector Current---IC(mA)
10000
0
50
100
150
Ambient Temperature---TA(℃)
200
Power Derating Curve
45
40
Power Dissipation---PD(W)
35
30
25
20
15
10
5
0
0
50
100
150
Case Temperature---TC(℃)
200
BTA1952E3
CYStek Product Specification
CYStech Electronics Corp.
TO-220AB Dimension
Marking:
E
C
Spec. No. : C601E3-A
Issued Date : 2004.09.16
Revised Date :
Page No. : 4/4
A
D
B
A1952
H
I
G
4
P
M
3
2
1
N
Style: Pin 1.Base 2.Collector 3.Emitter
4.Collector
K
O
3-Lead TO-220AB Plastic Package
CYStek Package Code: E3
*: Typical
DIM
A
B
C
D
E
G
H
Inches
Min.
Max.
0.2197 0.2949
0.3299 0.3504
0.1732
0.185
0.0453 0.0547
0.0138 0.0236
0.3803 0.4047
-
*
0.6398
Millimeters
Min.
Max.
5.58
7.49
8.38
8.90
4.40
4.70
1.15
1.39
0.35
0.60
9.66
10.28
-
*
16.25
DIM
I
K
M
N
O
P
Inches
Min.
Max.
-
*
0.1508
0.0295 0.0374
0.0449 0.0551
-
*
0.1000
0.5000 0.5618
0.5701 0.6248
Millimeters
Min.
Max.
-
*
3.83
0.75
0.95
1.14
1.40
-
*
2.54
12.70
14.27
14.48
15.87
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1952E3
CYStek Product Specification
微控制器 MCU
