BTA312-800E
4 October 2012
3Q Hi-Com Triac
Product data sheet
1. Product profile
1.1 General description
Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic
package. This "series E" triac balances the requirements of commutation performance
and gate sensitivity. The "sensitive gate" "series E" is intended for interfacing with low
power drivers including microcontrollers.
1.2 Features and benefits
•
3Q technology for improved noise immunity
•
Direct interfacing with low power drivers and microcontrollers
•
Good immunity to false turn-on by dV/dt
•
High commutation capability with sensitive gate
•
High voltage capability
•
Planar passivated for voltage ruggedness and reliability
•
Sensitive gate for easy logic level triggering
•
Triggering in three quadrants only
1.3 Applications
•
Electronic thermostats (heating and cooling)
•
High power motor controls e.g. washing machines and vacuum cleaners
1.4 Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
mb
≤ 100 °C;
Fig. 1;
Fig. 2; Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
2
-
10
mA
2
-
10
mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
800
100
12
Unit
V
A
A
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NXP Semiconductors
BTA312-800E
3Q Hi-Com Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
2
Typ
-
Max
10
Unit
mA
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220AB (SOT78)
3. Ordering information
Table 3.
Ordering information
Package
Name
BTA312-800E
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
mb
≤ 100 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
BTA312-800E
Conditions
Min
-
-
-
-
-
-
Max
800
12
100
110
50
100
Unit
V
A
A
A
2
2
I t for fusing
rate of rise of on-state current
2
t
p
= 10 ms; SIN
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
A s
A/µs
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
4 October 2012
2 / 11
NXP Semiconductors
BTA312-800E
3Q Hi-Com Triac
Symbol
I
GM
P
GM
P
G(AV)
T
stg
T
j
15
I
T(RMS )
(A)
Parameter
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
Conditions
Min
-
-
Max
2
5
0.5
150
125
003a a b687
Unit
A
W
W
°C
°C
over any 20 ms period
-
-40
-
003a a b686
50
I
T(RMS )
(A)
40
10
30
5
20
10
0
-50
0
50
100
150
T
mb
(°C)
0
10
-2
10
-1
1
10
s urge duration (s )
Fig. 1.
RMS on-state current as a function of mounting
base temperature; maximum values
f = 50 Hz; T
mb
= 100 °C
Fig. 2.
RMS on-state current as a function of surge
duration; maximum values
003aab690
16
P
tot
(W)
12
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
α = 180°
120°
90°
60°
30°
8
4
0
0
3
6
9
I
T(RMS)
(A)
12
α = conduction angle
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
BTA312-800E
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© NXP B.V. 2012. All rights reserved
Product data sheet
4 October 2012
3 / 11
NXP Semiconductors
BTA312-800E
3Q Hi-Com Triac
10
3
I
TSM
(A)
(1)
003aab806
10
2
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 4.
I
TSM
(A)
100
80
60
40
20
0
120
Non-repetitive peak on-state current as a function of pulse duration; maximum values
003aab809
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig. 5.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
full cycle;
Fig. 6
half cycle;
Fig. 6
in free air
Min
-
-
-
Typ
-
-
60
Max
1.5
2
-
Unit
K/W
K/W
K/W
R
th(j-a)
BTA312-800E
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© NXP B.V. 2012. All rights reserved
Product data sheet
4 October 2012
4 / 11
NXP Semiconductors
BTA312-800E
3Q Hi-Com Triac
10
Z
th(j-mb)
(K/W)
1
(1)
003aab775
10
-1
(2)
10
-2
P
D
10
-3
10
-5
t
p
t
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
10
(1) Unidirectional (half cycle)
(2) Bidirectional (full cycle)
Fig. 6.
Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Characteristics
Table 6.
Symbol
I
GT
Characteristics
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 8
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 8
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 8
I
H
V
T
V
GT
holding current
on-state voltage
gate trigger voltage
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 15 A; T
j
= 25 °C;
Fig. 10
V
D
= 12 V; T
j
= 25 °C;
Fig. 11
V
D
= 400 V; T
j
= 125 °C;
Fig. 11
I
D
off-state current
V
D
= 800 V; T
j
= 125 °C
-
-
-
0.25
-
-
1.3
0.8
0.4
0.1
15
1.6
1.5
-
0.5
mA
V
V
V
mA
-
-
25
mA
-
-
30
mA
-
-
25
mA
2
-
10
mA
2
-
10
mA
Min
2
Typ
-
Max
10
Unit
mA
Static characteristics
BTA312-800E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
4 October 2012
5 / 11
