BTB/BTA15
Discrete Triacs(Non-Isolated/Isolated)
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
G
T2
T1
T2
G
T1
ABSOLUTE MAXIMUM RATINGS
Symbol
I
T(RMS)
I
TSM
I
²
t
dI/dt
Parameter
RMS on-state current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I
²
t Value for
fusing
Critical rate of rise of on-state current
_
I
G
= 2 x
I
GT
, tr < 100 ns
TO-220AB
F = 60 Hz
F = 50 Hz
Tc = 100°C
t = 16.7 ms
t = 20 ms
Value
15
168
160
144
Tj = 125°C
50
Unit
A
A
A
²
s
A/µs
tp = 10 ms
F = 120 Hz
V
DSM
/V
RSM
Non repetitive surge peak off-state
voltage
I
GM
P
G(AV)
T
stg
T
j
Peak gate current
Average gate p ower diss ipation
Storage junction temperature range
Operating junction temperature
range
tp = 10 ms
tp = 20 µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
V
DRM
/V
RRM
+ 100
V
A
W
°C
4
1
- 40 to + 150
- 40 to + 125
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
s
SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants)
Symbol
Test Conditions
Quadrant
CW
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
V
D
= 12 V
V
D
= V
DRM
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 % V
DRM
gate open Tj = 125°C
Tj = 125°C
I - III
II
MIN.
MIN.
(dI/dt)c (2) Without snubber
R
L
= 33
Ω
R
L
= 3.3 k
Ω
Tj = 125°C
I - II - III
I - II - III
I - II - III
MAX.
MAX.
MIN.
MAX.
MAX.
35
50
60
500
8.5
35
1.3
0.2
50
70
80
1000
14
V/µs
A/ms
BTA/BTB
BW
50
mA
V
V
mA
mA
Unit
BTB/BTA15
Discrete Triacs(Non-Isolated/Isolated)
s
STANDARD (4 Quadrants)
Symbol
I
GT
(1)
V
D
= 12 V
V
GT
V
GD
I
H
(2)
I
L
V
D
= V
DRM
I
T
= 500 mA
I
G
= 1.2 I
GT
I - III - IV
II
R
L
= 3.3
Ω
Tj = 125°C
Test Conditions
R
L
= 33
Ω
Quadrant
I - II - III
IV
ALL
ALL
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
Value
50
100
1.3
0.2
50
60
120
400
10
V/µs
V/µs
Unit
mA
V
V
mA
mA
dV/dt (2) V
D
= 67 % V
DRM
gate open Tj = 125°C
(dV/dt)c (2) (dI/dt)c =7 A/ms
Tj = 125°C
STATIC CHARACTERISTICS
Symbol
V
TM
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
Note 1:
minimum IGT is guaranted at 5% of IGT max.
Note 2:
for both polarities of A2 referenced to A1
Test Conditions
I
TM
= 5.5 A
tp = 380 µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MAX.
MAX.
Value
1.55
0.85
60
5
1
Unit
V
V
m
Ω
µ
A
mA
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
THERMAL RESISTANCES
Symbol
R
th(j-c)
R
th(j-a)
Junction to case (AC)
Junction to ambient
Parameter
Value
1.2
60
Unit
°C/W
°C/W
PRODUCT SELECTOR
Voltage (xxx)
Part Number
200 V ~~ 1000 V
BTB/BTA15
X
X
50 mA
Standard
TO-220AB
Sensitivity
Type
Package
OTHER INFORMATION
Part Number
BTB/BTA15
Marking
BTB/BTA15
Weight
2.3 g
Base
quantity
250
Packing
mode
Bulk
BTB/BTA15
Discrete Triacs(Non-Isolated/Isolated)
F ig. 1: Maximum power dis s ipa tion vers us R MS
on-s tate current (full cycle).
P (W)
18
16
14
12
10
8
6
4
2
0
F ig. 2-1: R MS on-s tate current vers us cas e
temperature (full cycle).
IT (R MS ) (A )
B TB
20
18
16
14
12
10
8
6
4
2
0
B TA
IT (R MS ) (A )
0
2
4
6
8
10
12
14
16
T c (° C )
0
25
50
75
100
125
F ig. 3: R elative variation of thermal impeda nce
versus pulse duration.
F ig. 4:
values )
O n-s tate
chara cteris tics
(ma ximum
1E +0
K =[Zth/R th]
Zth(j-c )
IT M (A )
200
100
T j max
1E -1
Zth(j-a)
10
T j=25° C
tp (s )
1E -2
1E -3
1E -2
1E -1
1E +0
1E +1
1E +2 5E +2
V T M (V )
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T j max:
V to = 0.85 V
R d = 25 mΩ
4.0
4.5
5.0
F ig. 5: S urge peak on-s tate current versus
number of cycles.
IT S M (A )
180
160
140
120
100
80
60
40
20
0
t=20ms
Non repetitive
T j initial=25°C
One cycle
R epetitive
T c=85°C
Number of cycles
1
10
100
1000
BTB/BTA15
Discrete Triacs(Non-Isolated/Isolated)
F ig. 6: Non-repetitive s urge peak on-s tate
current for a s inus oida l puls e with width
tp < 10ms, a nd corres ponding value of I²t.
IT S M (A ), I² t (A ² s )
3000
T j initial=25°C
dI/dt limitation:
50A /µ
s
F ig. 7: R elative va riation of gate trigger current,
holding current and la tching current versus
junction temperature (typical va lues ).
IG T,IH,IL [T j] / IG T,IH,IL [T j=25° C ]
2.5
2.0
IG T
1000
1.5
IT S M
1.0
0.5
IH & IL
tp (ms )
100
0.01
0.10
1.00
I²t
T j(° C )
10.00
0.0
-40
-20
0
20
40
60
80
100
120
140
F ig. 8:
R elative variation of critical rate of
decreas e of main current vers us (dV /dt)c (typica l
values ).
(dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
1.0
(dV /dt)c (V /µ )
s
10.0
100.0
B
C
SW
F ig. 9: R elative variation of critical rate of
decreas e of main current vers us junction
temperature.
(dI/dt)c [T j] / (dI/dt)c [T j s pec ified]
6
5
4
B W/C W/T 1635
3
2
1
0
0
25
50
T j (° C )
75
100
125
