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BTB16-600

600 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
600 V, 16 A, 4 象限 逻辑 LEVEL 双向晶闸管, TO-220AB

器件类别：配件   

厂商名称：Apollo Electron

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参数 预览 参数对比
器件参数
参数名称
属性值
端子数量
3
加工封装描述
PLASTIC, SC-46, 3 PIN
无铅
Yes
欧盟RoHS规范
Yes
状态
ACTIVE
包装形状
RECTANGULAR
包装尺寸
FLANGE MOUNT
端子形式
THROUGH-HOLE
端子涂层
TIN
端子位置
SINGLE
包装材料
PLASTIC/EPOXY
结构
SINGLE
壳体连接
MAIN TERMINAL 2
元件数量
1
有效最大电流
16 A
断态重复峰值电压
600 V
触发装置类型
4 QUADRANT LOGIC LEVEL TRIAC
文档预览
TF16A60
Standard Triac
Symbol
○
2.T2
V
DRM
= 600V
I
T(RMS)
= 16 A
TO-220F
▼
▲
○
3.Gate
I
TSM
= 168A
1
2
3
1.T1
○
Features
Repetitive Peakk Off-State Voltage : 600V
◆
R.M.S On-State Current ( I
T(RMS)
= 16 A )
◆
High Commutation dv/dt
◆
General Description
This device is fully isolated p ackage suitable for AC sw itching app lication, phase control application
such as
spe ed and tem perature modulation con trol, in dustrial a nd domestic lighting co ntrol an d
static switching relay.
This device may substitute for BTA16-600,
BTB16-600,
BT139-600, BCR16PM-12, TM1661M/S-L
series.
Absolute Maximum Ratings
Symbol
V
DRM
I
T(RMS)
I
TSM
I
2
t
P
G(AV)
I
GM
T
J
T
STG
( Tj = 25°C unless otherwise specified )
Condition
Sine wave, 50 to 60 Hz
T
j
= 125 °C,
Full Sine wave
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
tp =10ms
Tj=125°C
T
j
=125°C
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I
2
t
Average Gate Power Dissipation
Peak Gate Current
Operating Junction Temperature
Storage Temperature
Ratings
600
Units
V
A
A
A
2
s
W
A
°C
°C
..
16
160/168
128
1
2
- 40 ~ 125
- 40 ~ 150
July,
2010. Rev.2
copyright @ Apollo Electron Co., Ltd. All rights reserved.
1/6
TF16A60
Electrical Characteristics
(Tj=25 °C unless otherwise specified)
Symbol
Items
Repetitive Peak Off-State
Current
Peak On-State Voltage
Ⅰ
Ⅱ
Ⅲ
Ⅰ
Ⅱ
Ⅲ
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage
Holding Current
T
J
= 125 °C, V
D
=V
DRM,
R
L
=3.3kΩ
T
J
= 125 °C,
V
D
=2/3 V
DRM
I
T
=0.2A
Gate Trigger Voltage
V
D
=
12
V, R
L
=30
Ω
Gate Trigger Current
V
D
=
12
V, R
L
=30
Ω
Conditions
V
D
= V
DRM
, Single Phase, Half Wave
Tj = 125 °C
I
TM
= 22.5 A,
tp=380
㎲
Ratings
Min.
----
─
─
─
─
─
─
─
Typ.
----
__
─
─
─
─
─
─
----
Max.
2.0
1.55
30
30
30
1.5
1.5
1.5
-----
Unit
I
DRM
V
TM
I
+GT1
I
-GT1
I
-GT3
V
+GT1
V
-GT1
V
-GT3
V
GD
dv/dt
I
H
mA
V
mA
V
0.2
V
200
---
----
----
V/㎲
mA
---
50
2/6
TF16A60
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
10
1
V
GM
(10V)
10
2
P
G(AV)
(1W)
25
℃
10
On-State Current [A]
Gate Voltage [V]
P
GM
(5W)
T
J
= 125 C
1
o
10
I
GM
(2A)
0
T
J
= 25 C
o
10
-1
V
GD
(0.2V)
1
10
0
10
10
2
10
3
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs.
Maximum Power Dissipation
20
18
Fig 4. On State Current vs.
Allowable Case Temperature
Allowable Case Temperature [ C]
o
130
120
110
100
90
o
Power Dissipation [W]
16
14
12
10
8
6
4
2
0
0
2
π
θ
360°
θ
2
π
θ
= 180
o
θ
= 150
o
θ
= 120
θ
= 90
θ
= 60
θ
= 30
o
o
o
θ
: Conduction Angle
π
θ
θ
θ
= 30
2
π
o
o
80
70
60
360°
θ
: Conduction Angle
θ
θ
θ
θ
θ
10
12
14
16
= 60
o
= 90
o
= 120
o
= 150
o
= 180
18
20
4
6
8
10
12
14
16
18
20
0
2
4
6
8
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
200
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
10
Surge On-State Current [A]
150
60Hz
100
V
GT
(25 C)
V
GT
(t C)
V
o
o
_
GT3
1
50Hz
50
V
V
+
GT1
_
GT1
0
0
10
10
1
10
2
0.1
-50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
3/6
TF16A60
Fig 7. Gate Trigger Current vs.
Junction Temperature
10
10
Fig 8. Transient Thermal Impedance
1
Transient Thermal Impedance [ C/W]
I
GT
(25 C)
I
GT
(t C)
o
o
o
1
I
+
GT1
I
I
0.1
-50
_
GT3
_
GT1
0
50
100
o
150
0.1
-2
10
10
-1
10
0
10
1
10
2
Junction Temperature [ C]
Time (sec)
4/6
TF16A60
TO-220F Package Dimension
Sym bol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
MIN
9.88
15.30
2.95
10.30
0.95
1.81
0.50
3.00
4.35
6.20
0.41
2.30
2.53
2.34
IN C H ES
TYP
10.08
15.50
3.00
10.50
1.08
1.84
0.70
3.20
4.45
6.40
0.51
2.50
2.73
2.54
MAX
10.28
15.70
3.05
10.70
1.20
1.87
0.90
3.40
4.55
6.60
0.61
2.70
2.93
2.74
MILLIMETER S
MIN
25.10
25.60
38.86
39.37
7.49
7.62
26.16
26.67
2.41
2.74
4.60
4.67
1.27
1.78
7.62
8.13
11.05
11.30
15.75
16.26
1.28
1.03
5.84
6.35
6.43
6.93
5.94
6.45
TYP
26.11
39.88
7.75
27.18
3.05
4.75
2.29
8.64
11.56
16.76
1.54
6.86
7.44
6.96
5/6
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参数对比
与BTB16-600相近的元器件有：BCR16PM-12、BTA16-600、BT139-600、TM1661M-L、TM1661S-L、TF16A60。描述及对比如下：
型号 BTB16-600 BCR16PM-12 BTA16-600 BT139-600 TM1661M-L TM1661S-L TF16A60
描述 600 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB 600 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB 600 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB 600 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB 600 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB 600 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB 600 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
端子数量 3 3 3 3 3 3 3
加工封装描述 PLASTIC, SC-46, 3 PIN PLASTIC, SC-46, 3 PIN PLASTIC, SC-46, 3 PIN PLASTIC, SC-46, 3 PIN PLASTIC, SC-46, 3 PIN PLASTIC, SC-46, 3 PIN PLASTIC, SC-46, 3 PIN
无铅 Yes Yes Yes Yes Yes Yes Yes
欧盟RoHS规范 Yes Yes Yes Yes Yes Yes Yes
状态 ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE
包装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
包装尺寸 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子涂层 TIN TIN TIN TIN TIN TIN TIN
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
包装材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
结构 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
壳体连接 MAIN TERMINAL 2 MAIN TERMINAL 2 MAIN TERMINAL 2 MAIN TERMINAL 2 MAIN TERMINAL 2 MAIN TERMINAL 2 MAIN TERMINAL 2
元件数量 1 1 1 1 1 1 1
有效最大电流 16 A 16 A 16 A 16 A 16 A 16 A 16 A
断态重复峰值电压 600 V 600 V 600 V 600 V 600 V 600 V 600 V
触发装置类型 4 QUADRANT LOGIC LEVEL TRIAC 4 QUADRANT LOGIC LEVEL TRIAC 4 QUADRANT LOGIC LEVEL TRIAC 4 QUADRANT LOGIC LEVEL TRIAC 4 QUADRANT LOGIC LEVEL TRIAC 4 QUADRANT LOGIC LEVEL TRIAC 4 QUADRANT LOGIC LEVEL TRIAC
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