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BTB772T3S

Low Vcesat PNP Epitaxial Planar Transistor

厂商名称:CYSTEKEC

厂商官网:http://www.cystekec.com/

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CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C817T3-H
Issued Date : 2002.08.18
Revised Date : 2005.09.16
Page No. : 1/4
BTB772T3/S
Features
Low V
CE(sat)
, typically -0.3V at I
C
/ I
B
= -2A / -0.2A
Excellent current gain characteristics
Complementary to BTD882T3/S
Pb-free package is available
Equivalent Circuit
BTB772T3/S
Outline
TO-126
B:Base
C:Collector
E:Emitter
E C B
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
(DC)
I
C
(pulse)
Pd(Ta=25℃)
Pd(Tc=25℃)
Tj
Tstg
Limit
-40
-30
-5
-3
-7
1
10
150
-55~+150
Unit
V
V
V
A
A
W
°C
°C
*1
Note : *1. Single Pulse Pw
350µs, Duty
2%
.
BTB772T3/S
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE
1
*h
FE
2
f
T
Cob
Min.
-40
-30
-5
-
-
-
-
52
100
-
-
Typ.
-
-
-
-
-
-0.3
-1
-
-
80
55
Max.
-
-
-
-1
-1
-0.5
-2
-
500
-
-
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Spec. No. : C817T3-H
Issued Date : 2002.08.18
Revised Date : 2005.09.16
Page No. : 2/4
Test Conditions
I
C
=-50µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50µA, I
C
=0
V
CB
=-30V, I
E
=0
V
EB
=-3V, I
C
=0
I
C
=-2A, I
B
=-0.2A
I
C
=-2A, I
B
=-0.2A
V
CE
=-2V, I
C
=-20mA
V
CE
=-2V, I
C
=-1A
V
CE
=-5V, I
C
=-0.1A, f=100MHz
V
CB
=-10V, f=1MHz
*Pulse Test : Pulse Width
≤380µs,
Duty Cycle≤2%
Classification Of h
FE
2
Rank
Range
Q
100~200
P
160~320
E
250~500
Ordering Information
Device
BTB772T3
BTB772T3S
Package
TO-126
TO-126
(Pb-free)
Shipping
500 pcs / bag
500 pcs / bag
BTB772T3/S
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current gain vs Collector current
1000
VCE=5V
Spec. No. : C817T3-H
Issued Date : 2002.08.18
Revised Date : 2005.09.16
Page No. : 3/4
C-E saturation voltage vs Collector current
C-E saturation voltage---VCE(SAT)(mV)
10000
Current gain---HFE
1000
100
VCE=2V
100
IC=40IB
VCE=1V
10
IC=10IB
1
1
10
100
1000
10000
Collector current---IC(mA)
IC=20IB
10
1
10
100
1000
10000
Collector current---IC(mA)
B-E saturation voltage vs Collector current
10000
B-E saturation---VBE(SAT)(mV)
Power derating curves
12
Power Dissipation---(W)
10
8
6
4
2
0
Ta=25℃
Tc=25℃
IC=10IB
1000
100
1
10
100
1000
10000
Collector current---IC(mA)
0
50
100
150
200
Temperature---(℃)
BTB772T3/S
CYStek Product Specification
CYStech Electronics Corp.
TO-126 Dimension
D
A
B
1 2 3
G
C
I
Spec. No. : C817T3-H
Issued Date : 2002.08.18
Revised Date : 2005.09.16
Page No. : 4/4
E
J
K
M
Marking:
α
3
α
4
B772
Style: Pin 1.Emitter 2.Collector 3.Base
F
H
L
α
1
α
2
3-Lead TO-126 Plastic Package
CYStek Package Code: T3
*: Typical
DIM
α1
α2
α3
α4
A
B
C
D
E
Inches
Min.
Max.
-
*3°
-
*3°
-
*3°
-
*3°
0.1500
0.1539
0.2752
0.2791
0.5315
0.6102
0.2854
0.3039
0.0374
0.0413
Millimeters
Min.
Max.
-
*3°
-
*3°
-
*3°
-
*3°
3.81
3.91
6.99
7.09
13.50
15.50
7.52
7.72
0.95
1.05
DIM
F
G
H
I
J
K
L
M
Inches
Min.
Max.
0.0280
0.0319
0.0480
0.0520
0.1709
0.1890
0.0950
0.1050
0.0450
0.0550
0.0450
0.0550
-
*0.0217
0.1378
0.1520
Millimeters
Min.
Max.
0.71
0.81
1.22
1.32
4.34
4.80
2.41
2.66
1.14
1.39
1.14
1.39
-
*0.55
3.50
3.86
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB772T3/S
CYStek Product Specification
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参数对比
与BTB772T3S相近的元器件有:BTB772T3。描述及对比如下:
型号 BTB772T3S BTB772T3
描述 Low Vcesat PNP Epitaxial Planar Transistor Low Vcesat PNP Epitaxial Planar Transistor
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