CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C214N3-A
Issued Date : 2005.11.30
Revised Date : 2012.04.23
Page No. : 1/6
BTN6427N3
Description
•
The BTN6427N3 is a darlington amplifier transistor
•
Pb-free package
.
Equivalent Circuit
BTN6427N3
C
Outline
SOT-23
B
B：Base
C：Collector
E：Emitter
E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
100
60
60
12
0.5
225
150
-55~+150
Unit
V
V
V
V
A
mW
°C
°C
BTN6427N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
BE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
*h
FE
3
Cob
Min.
100
60
60
12
-
-
-
-
-
-
10K
20K
14K
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-
50
50
1.2
1.5
2.0
1.75
100K
200K
140K
7
Unit
V
V
V
V
nA
nA
V
V
V
V
-
-
-
pF
Spec. No. : C214N3-A
Issued Date : 2005.11.30
Revised Date : 2012.04.23
Page No. : 2/6
Test Conditions
I
C
=100μA
I
C
=100μA, V
BE
=0V
I
C
=10mA
I
E
=10μA
V
CB
=80V
V
EB
=10V
I
C
=50mA, I
B
=0.5mA
I
C
=500mA, I
B
=0.5mA
I
C
=500mA, I
B
=0.5mA
V
CE
=5V, I
C
=50mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=100mA
V
CE
=5V, I
C
=500mA
V
CB
=10V, f=100MHz
*Pulse Test: Pulse Width
≤380μs,
Duty Cycle≤2%
Ordering Information
Device
BTN6427N3
Package
SOT-23
(Pb-free)
Shipping
3000 pcs / Tape & Reel
Marking
1N
BTN6427N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
100000
Saturation Voltage---(mV)
10000
Spec. No. : C214N3-A
Issued Date : 2005.11.30
Revised Date : 2012.04.23
Page No. : 3/6
Saturation Voltage vs Collector Current
Current Gain---
HFE
VCE(SAT)@IC=1000IB
10000
1000
HFE@VCE=5V
1000
1
10
100
Collector Current---IC(mA)
1000
100
1
10
100
1000
Collector Current ---IC(mA)
Saturation Voltage vs Collector Current
10000
Saturation Voltage---(mV)
10000
ON Voltage vs Collector Current
VBE(ON)@VCE=5V
VBE(SAT)@IC=1000IB
ON Voltage --- (mV)
1000
1000
1
10
100
1000
Collector Current ---IC(mA)
100
0.1
1
10
100
Collector Current ---IC(mA)
1000
Power Derating Curve
250
Power Dissipation---PD(mW)
200
150
100
50
0
0
50
100
150
Ambient Temperature ---Ta(℃ )
200
BTN6427N3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C214N3-A
Issued Date : 2005.11.30
Revised Date : 2012.04.23
Page No. : 4/6
Carrier Tape Dimension
BTN6427N3
CYStek Product Specification
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5
°C
Spec. No. : C214N3-A
Issued Date : 2005.11.30
Revised Date : 2012.04.23
Page No. : 5/6
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature
Min(T
S
min)
−Temperature
Max(T
S
max)
−Time(ts
min
to ts
max
)
Time maintained above:
−Temperature
(T
L
)
−
Time (t
L
)
Peak Temperature(T
P
)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25
°C
to peak temperature
Sn-Pb eutectic Assembly
3°C/second max.
100°C
150°C
60-120 seconds
183°C
60-150 seconds
240 +0/-5
°C
10-30 seconds
6°C/second max.
6 minutes max.
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5
°C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTN6427N3
CYStek Product Specification
