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BTNA14A3

Gentral Purpose NPN Epitaxial Planar Transistor

厂商名称:CYSTEKEC

厂商官网:http://www.cystekec.com/

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CYStech Electronics Corp.
Gentral Purpose NPN Epitaxial Planar Transistor
Spec. No. : C214A3
Issued Date : 2003.03.27
Revised Date :
Page No. : 1/4
BTNA14A3
Description
The BTNA14A3 is a darlington amplifier transistor
Complementary to BTPA64A3
.
Equivalent Circuit
BTNA14A3
TO-92
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VEBO
IC
Pd
Tj
Tstg
Limits
30
30
10
0.5
625
150
-55~+150
Unit
V
V
V
A
mW
°C
°C
BTNA14A3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C214A3
Issued Date : 2003.03.27
Revised Date :
Page No. : 2/4
Characteristics
(Ta=25°C)
Symbol
BVCES
ICBO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Min.
30
-
-
-
-
10K
20K
125
Typ.
-
-
-
-
-
-
-
-
Max.
-
100
100
1.5
2.0
-
-
-
Unit
V
nA
nA
V
V
Test Conditions
IC=100uA
VCE=30V
VEB=10V
IC=100mA, IB=0.1mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA, f=100MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
Characteristic Curves
Current Gain vs Collector Current
100000
Saturation Voltage---(mV)
HFE@VCE=5V
Current Gain---
HFE
10000
VCE(SAT)@IC=1000IB
Saturation Voltage vs Collector Current
10000
1000
1000
1
10
100
1000
Collector Current---IC(mA)
100
1
10
100
1000
Collector Current ---IC(mA)
BTNA14A3
CYStek Product Specification
CYStech Electronics Corp.
Saturation Voltage vs Collector Current
Spec. No. : C214A3
Issued Date : 2003.03.27
Revised Date :
Page No. : 3/4
ON Voltage vs Collector Current
10000
10000
Saturation Voltage---(mV)
ON Voltage --- (mV)
VBE(SAT)@IC=1000IB
VBE(ON)@VCE=5V
1000
1000
1
10
100
1000
Collector Current ---IC(mA)
100
0.1
1
10
100
1000
Collector Current ---IC(mA)
Cutoff Frequency vs Collector Current
1
Cutoff Frequency---FT(GHZ)
Power Dissipation--- PD(mW)
700
600
500
400
300
200
100
0
Power Derating Curve
FT@VCE=5V
0.1
1
10
Collector Current---IC(mA)
100
0
50
100
150
Ambient Temperature---Ta(℃ )
BTNA14A3
CYStek Product Specification
cys
tek
TO-92 Dimension
A
B
1
2
3
CYStech Electronics Corp.
Spec. No. : C214A3
Issued Date : 2003.03.27
Revised Date :
Page No. : 4/4
α
2
Marking:
α
3
A14
C
D
H
I
E
F
G
α
1
Style: Pin 1.Emitter 2.Base 3.Collector
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
*: Typical
DIM
A
B
C
D
E
F
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
-
0.0142 0.0220
-
*
0.0500
0.1323 0.1480
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
-
0.36
0.56
-
*
1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
-
*
0.1000
-
*
0.0500
-
*
-
*
-
*
Millimeters
Min.
Max.
0.36
0.56
-
*
2.54
-
*
1.27
-
*
-
*
-
*
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTNA14A3
CYStek Product Specification
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