INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
BU807FI
DESCRIPTION
·High
Voltage: V
CBO
= 330V(Min)
·Low
Saturation Voltage-
: V
CE(sat)
= 1.5V(Max)@ I
C
= 5A
APPLICATIONS
·Designed
for use in horizontal deflection circuits in TV’s
and CRT’s.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
330
V
V
CEV
Collector-Emitter Voltage
330
V
V
CEO
Collector-Emitter Voltage
150
V
V
EBO
I
C
Emitter-Base Voltage
6
V
Collector Current-Continuous
8
A
I
CM
Collector Current-Peak
15
A
I
B
B
Base Current
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
2
A
P
C
30
W
℃
℃
T
J
150
T
stg
Storage Temperature Range
-55~150
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
BU807FI
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 100mA ;I
B
= 0
150
V
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 5A; I
B
= 50mA
B
1.5
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 5A; I
B
= 50mA
B
2.4
V
I
CES
Collector Cutoff Current
V
CE
= 330V; V
BE
= 0
0.1
mA
I
CEV
Collector Cutoff Current
V
CE
= 330V; V
BE(
off
)
= 6V
0.1
mA
I
EBO
Emitter Cutoff Current
V
EB
= 6V; I
C
= 0
3.0
mA
V
ECF
C-E Diode Forward Voltage
I
F
= 4A
2.0
V
isc Website：www.iscsemi.cn
2
