CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
Spec. No. : C660F3
Issued Date : 2010.10.01
Revised Date : 2014.02.13
Page No. : 1/6
BU941ZF3
Features
•High
BV
CEO
•Low
V
CE(SAT)
•High
current capability
•Built-in
clamping zener
•Pb-free
lead plating package
Applications
•High
ruggedness electronic ignitions
Equivalent Circuit
BU941ZF3
C
B
Outline
TO-263
B：Base
C：Collector
E：Emitter
E
B C E
Ordering Information
Device
BU941ZF3-0-T7-S
Package
TO-263
(Pb-free lead plating package)
Shipping
800pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T7: 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
BU941ZF3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Thermal Resistance, Junction to
Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw=10ms
Spec. No. : C660F3
Issued Date : 2010.10.01
Revised Date : 2014.02.13
Page No. : 2/6
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(Pulse)
I
B(DC)
I
B(Pulse)
Pd
(T
A
=25℃)
Pd
(T
C
=25℃)
R
θJA
R
θJC
Tj
Tstg
Limits
350
350
5
15
30
1
5
2
150
75
1
175
-65~+175
Unit
V
V
V
*1
*1
A
A
W
°C/W
°C/W
°C
°C
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
I
CEO
I
CBO
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
CE(sat)
3
*V
BE(sat)
1
*V
BE(sat)
2
*V
FEC
*h
FE
1
*h
FE
2
Min.
350
350
-
-
-
-
-
-
-
-
-
1100
800
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
450
450
100
100
10
1.6
1.5
1.6
2.2
2.5
1.6
2400
-
Unit
V
V
μA
μA
mA
V
V
V
V
V
V
-
-
Test Conditions
I
C
=1mA, I
E
=0
I
C
=100mA, I
B
=0
V
CE
=350V, I
E
=0
V
CB
=350V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=6A, I
B
=10mA
I
C
=8A, I
B
=100mA
I
C
=10A, I
B
=250mA
I
C
=8A, I
B
=100mA
I
C
=10A, I
B
=250mA
I
C
=10A
V
CE
=10V, I
C
=5A
V
CE
=10V, I
C
=8A
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
BU941ZF3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
10000
VCE=10V
Spec. No. : C660F3
Issued Date : 2010.10.01
Revised Date : 2014.02.13
Page No. : 3/6
Saturation Voltage vs Collector Current
10000
Saturation Voltage---(mV)
VCESAT
IC=100IB
Current Gain---HFE
1000
1000
IC=40IB
IC=80IB
100
100
1000
10000
100000
Collector Current---IC(mA)
100
100
1000
10000
100000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
10000
VBESAT @ IC=40IB
10000
Built-in Diode Forward Characteristics
Forward Voltage---VF(mV)
Saturation Voltage---(mV)
1000
1000
100
100
1000
10000
100000
Collector Current---IC(mA)
100
1
10
100
1000
10000
100000
Forward Current---IF(mA)
Power Derating Curve
2.5
Power Dissipation---PD(W)
2
1.5
1
0.5
0
0
50
100
150
Ambient Temperature---TA(℃)
200
Power Dissipation---PD(W)
160
140
120
100
80
60
40
20
0
0
Power Derating Curve
50
100
150
Case Temperature---TC(℃)
200
BU941ZF3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C660F3
Issued Date : 2010.10.01
Revised Date : 2014.02.13
Page No. : 4/6
Carrier Tape Dimension
BU941ZF3
CYStek Product Specification
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5
°C
Spec. No. : C660F3
Issued Date : 2010.10.01
Revised Date : 2014.02.13
Page No. : 5/6
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature
Min(T
S
min)
−Temperature
Max(T
S
max)
−Time(ts
min
to ts
max
)
Time maintained above:
−Temperature
(T
L
)
−
Time (t
L
)
Peak Temperature(T
P
)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25
°C
to peak temperature
Sn-Pb eutectic Assembly
3°C/second max.
100°C
150°C
60-120 seconds
183°C
60-150 seconds
240 +0/-5
°C
10-30 seconds
6°C/second max.
6 minutes max.
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5
°C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BU941ZF3
CYStek Product Specification
