BUK6D23-40E
13 December 2017
40 V, N-channel Trench MOSFET
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6
(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
•
•
•
•
•
Extended temperature range T
j
= 175 °C
Side wettable flanks for optical solder inspection
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Trench MOSFET technology
AEC-Q101 qualified
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DS
V
GS
I
D
P
tot
R
DSon
Parameter
drain-source voltage
gate-source voltage
drain current
total power dissipation
drain-source on-state
resistance
V
GS
= 10 V; T
sp
= 25 °C
T
sp
= 25 °C
V
GS
= 10 V; I
D
= 8 A; T
j
= 25 °C
Conditions
T
j
= 25 °C
Min
-
-20
-
-
-
Typ
-
-
-
-
17
Max
40
20
19
15
23
Unit
V
V
A
W
mΩ
Static characteristics
Nexperia
BUK6D23-40E
40 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
4
5
6
7
8
Symbol Description
D
D
G
S
D
D
D
S
drain
drain
gate
source
drain
drain
drain
source
Simplified outline
1
2
3
7
6
5
4
G
mbb076
Graphic symbol
D
8
S
Transparent top view
DFN2020MD-6 (SOT1220)
6. Ordering information
Table 3. Ordering information
Type number
BUK6D23-40E
Package
Name
Description
Version
DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline SOT1220
package; no leads; 6 terminals
7. Marking
Table 4. Marking codes
Type number
BUK6D23-40E
Marking code
4R
BUK6D23-40E
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
13 December 2017
2 / 15
Nexperia
BUK6D23-40E
40 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= 10 V; T
sp
= 25 °C
V
GS
= 10 V; T
sp
= 100 °C
V
GS
= 10 V; T
amb
= 25 °C
I
DM
P
tot
T
j
T
amb
T
stg
I
S
I
SM
V
ESD
peak drain current
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
peak source current
electrostatic discharge
voltage
non-repetitive drain-
source avalanche
energy
T
sp
= 25 °C
T
amb
= 25 °C
single pulse; t
p
≤ 10 µs; T
sp
= 25 °C
HBM
[2]
ESD maximum rating
-
500
V
[1]
T
sp
= 25 °C; single pulse; t
p
≤ 10 µs
T
sp
= 25 °C
T
amb
= 25 °C
[1]
[1]
Conditions
T
j
= 25 °C
Min
-
-20
-
-
-
-
-
-
-55
-55
-65
-
-
-
Max
40
20
19
12
8
76
15
2.3
175
175
175
15
2.3
61
Unit
V
V
A
A
A
A
W
W
°C
°C
°C
A
A
A
Source-drain diode
Avalanche ruggedness
E
DS(AL)S
T
j(init)
= 25 °C; I
D
= 1.35 A; DUT in
avalanche (unclamped)
-
28.4
mJ
[1]
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .
Measured between all pins.
2
BUK6D23-40E
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
13 December 2017
3 / 15
Nexperia
BUK6D23-40E
40 V, N-channel Trench MOSFET
120
P
der
(%)
80
aaa-026120
120
I
der
(%)
80
aaa-026121
40
40
0
-75
25
125
T
j
(°C)
225
0
-75
25
125
T
j
(°C)
225
Fig. 1.
10
2
I
D
(A)
10
Normalized total power dissipation as a
function of junction temperature
Fig. 2.
Normalized continuous drain current as a
function of junction temperature
aaa-027749
Limit R
DSon
= V
DS
/I
D
t
p
= 10 µs
100 µs
1
DC; T
sp
= 25 °C
10
-1
DC; T
amb
= 25 °C; 6 cm
2
1 ms
10 ms
100 ms
10
-2
10
-1
1
10
V
DS
(V)
10
2
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
BUK6D23-40E
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
13 December 2017
4 / 15
Nexperia
BUK6D23-40E
40 V, N-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
R
th(j-a)
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
2
Conditions
in free air
[1]
Min
-
Typ
57
Max
66
Unit
K/W
R
th(j-sp)
-
6
10
K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
10
Z
th(j-sp)
(K/W)
1
0.1
0.05
0.02
10-1
0
0.01
aaa-027718
duty cycle = 1
0.75
0.5
0.25
0.33
0.2
10
-2
10
-5
10
-4
10
-3
t
p
(s)
10
-2
Fig. 4.
10
2
Transient thermal impedance from junction to solder point as a function of pulse duration; typical values
aaa-026870
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.5
0.33
0.2
10
0.05
0.02
0.01
0
1
10
-3
0.25
0.1
10
-2
10
-1
2
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for drain 6 cm
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BUK6D23-40E
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
13 December 2017
5 / 15
stm32/stm8
