BUK7M3R3-40H
29 January 2019
N-channel 40 V, 3.3 mΩ standard level MOSFET in LFPAK33
Product data sheet
1. General description
Automotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9
TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high
performance automotive applications.
2. Features and benefits
•
•
•
Fully automotive qualified to AEC-Q101 at 175 °C
Trench 9 superjunction technology:
•
Low power losses, high power density
LFPAK copper clip package technology:
•
High robustness and reliability
•
Gull wing leads for high manufacturability and AOI
Repetitive avalanche rated
•
3. Applications
•
•
•
•
•
12 V automotive systems
Powertrain, chassis, body and infotainment applications
Medium/Low power motor drive
DC-DC systems
LED lighting
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V
DS
I
D
P
tot
R
DSon
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
gate-drain charge
Conditions
25 °C ≤ T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 2
T
mb
= 25 °C;
Fig. 1
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
I
D
= 25 A; V
DS
= 32 V; V
GS
= 10 V;
Fig. 13; Fig. 14
I
S
= 25 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
V
DS
= 20 V;
Fig. 17
[1]
Min
-
-
-
1.8
Typ
-
-
-
2.6
Max
40
80
101
3.3
Unit
V
A
W
mΩ
Static characteristics
Dynamic characteristics
Q
GD
-
6.6
13.2
nC
Source-drain diode
Q
r
recovered charge
-
21
-
nC
Nexperia
BUK7M3R3-40H
N-channel 40 V, 3.3 mΩ standard level MOSFET in LFPAK33
Parameter
softness factor
Conditions
I
S
= 25 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
V
DS
= 20 V; T
j
= 25 °C;
Fig. 16
Min
-
Typ
0.68
Max
-
Unit
Symbol
S
[1]
80A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
2
3
4
mb
S
S
S
G
D
source
source
source
gate
Mounting base; connected to
drain
1
2
3
4
G
mbb076
Simplified outline
Graphic symbol
D
S
LFPAK33 (SOT1210)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK7M3R3-40H
LFPAK33
Description
Plastic, single ended surface mounted package (LFPAK33); 8
leads; 0.65 mm pitch
Version
SOT1210
7. Marking
Table 4. Marking codes
Type number
BUK7M3R3-40H
Marking code
73H340
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
P
tot
I
D
I
DM
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
total power dissipation
drain current
peak drain current
storage temperature
junction temperature
Conditions
25 °C ≤ T
j
≤ 175 °C
DC; T
j
≤ 175 °C
T
mb
= 25 °C;
Fig. 1
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 2
V
GS
= 10 V; T
mb
= 100 °C;
Fig. 2
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C;
Fig. 3
[1]
Min
-
-10
-
-
-
-
-55
-55
Max
40
20
101
80
80
475
175
175
Unit
V
V
W
A
A
A
°C
°C
Source-drain diode
BUK7M3R3-40H
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
29 January 2019
2 / 11
Nexperia
BUK7M3R3-40H
N-channel 40 V, 3.3 mΩ standard level MOSFET in LFPAK33
Parameter
source current
peak source current
Conditions
T
mb
= 25 °C
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C
[2] [3]
Min
-
-
-
Max
80
475
57
Unit
A
A
mJ
Symbol
I
S
I
SM
E
DS(AL)S
Avalanche ruggedness
non-repetitive drain-
I
D
= 80 A; V
sup
≤ 40 V; R
GS
= 50 Ω;
source avalanche energy V
GS
= 10 V; T
j(init)
= 25 °C; unclamped;
Fig. 4
[1]
[2]
[3]
80A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Refer to application note AN10273 for further information.
120
P
der
(%)
80
03aa16
I
D
(A)
100
80
60
120
aaa-028618
(1)
40
40
20
0
0
50
100
150
T
mb
(°C)
200
0
0
25
50
75
100
125
150 175
T
mb
(°C)
200
Fig. 1.
Normalized total power dissipation as a
function of mounting base temperature
Fig. 2.
10
3
Limit R
DSon
= V
DS
/ I
D
10
2
DC
10
V
GS
≥ 10 V
(1) 80A continuous current has been successfully
demonstrated during application tests. Practically
the current will be limited by PCB, thermal design
and operating temperature.
Continuous drain current as a function of
mounting base temperature
aaa-028608
I
D
(A)
t
p
= 10 µs
100 µs
1
1 ms
10 ms
100 ms
10
-1
10
-1
1
10
V
DS
(V)
10
2
T
mb
= 25 °C; I
DM
is a single pulse
Fig. 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7M3R3-40H
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
29 January 2019
3 / 11
Nexperia
BUK7M3R3-40H
N-channel 40 V, 3.3 mΩ standard level MOSFET in LFPAK33
10
2
aaa-028609
I
AL
(A)
(1)
10
(2)
1
(3)
10
-1
10
-3
10
-2
10
-1
1
t
AL
(ms)
10
(1) T
j (init)
= 25 °C; (2) T
j (init)
= 150 °C; (3) Repetitive Avalanche
Fig. 4.
Avalanche rating; avalanche current as a function of avalanche time
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
R
th(j-mb)
Conditions
Min
-
Typ
1.3
Max
1.48
Unit
K/W
thermal resistance from
Fig. 5
junction to mounting
base
Z
th(j-mb)
(K/W)
10
aaa-028610
1
δ = 0.5
0.2
0.1
10
-1
0.05
0.02
10
-2
t
p
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
single shot
P
δ=
t
p
T
t
T
t
p
(s)
1
Fig. 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= -40 °C
40
-
43
40.5
-
-
V
V
Conditions
Min
Typ
Max
Unit
BUK7M3R3-40H
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
29 January 2019
4 / 11
Nexperia
BUK7M3R3-40H
N-channel 40 V, 3.3 mΩ standard level MOSFET in LFPAK33
Parameter
gate-source threshold
voltage
Conditions
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
=V
GS
; T
j
= 25 °C;
Fig. 9;
Fig. 10
I
D
= 1 mA; V
DS
=V
GS
; T
j
= -55 °C;
Fig. 9
I
D
= 1 mA; V
DS
=V
GS
; T
j
= 175 °C;
Fig. 9
Min
36
2.4
-
1
-
-
-
-
-
1.8
2.5
2.8
3.5
0.3
-
-
-
V
DS
= 25 V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C;
Fig. 15
-
-
-
V
DS
= 30 V; R
L
= 1.2 Ω; V
GS
= 10 V;
R
G(ext)
= 5 Ω
-
-
-
-
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
Fig. 16
I
S
= 25 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
V
DS
= 20 V
I
S
= 25 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
V
DS
= 20 V;
Fig. 17
I
S
= 25 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
V
DS
= 20 V; T
j
= 25 °C;
Fig. 16
I
S
= 25 A; dI
S
/dt = -500 A/µs; V
GS
= 0 V;
V
DS
= 20 V; T
j
= 25 °C;
Fig. 16
-
-
-
-
-
Typ
40
3
-
-
0.07
0.94
80
2
2
2.6
4
4.4
5.5
0.8
32
9
6.6
2169
592
113
8.4
7.3
19
9.1
0.82
27
21
0.68
0.49
Max
-
3.6
4.3
-
1
10
500
100
100
3.3
5.3
5.8
7.2
2
45
14
13.2
3037
829
250
-
-
-
-
1.2
-
-
-
-
Unit
V
V
V
V
µA
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
Ω
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
Symbol
V
GS(th)
I
DSS
drain leakage current
V
DS
= 40 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 16 V; V
GS
= 0 V; T
j
= 125 °C
V
DS
= 40 V; V
GS
= 0 V; T
j
= 175 °C
I
GSS
R
DSon
gate leakage current
drain-source on-state
resistance
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
V
GS
= 10 V; I
D
= 25 A; T
j
= 105 °C;
Fig. 12
V
GS
= 10 V; I
D
= 25 A; T
j
= 125 °C;
Fig. 12
V
GS
= 10 V; I
D
= 25 A; T
j
= 175 °C;
Fig. 12
R
G
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
Q
r
S
gate resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
softness factor
f = 1 MHz; T
j
= 25 °C
I
D
= 25 A; V
DS
= 32 V; V
GS
= 10 V;
Fig. 13; Fig. 14
Dynamic characteristics
Source-drain diode
BUK7M3R3-40H
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
29 January 2019
5 / 11
玄铁RISC-V活动专区
