Philips Semiconductors
Product specification
TrenchMOS™ transistor
Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope using ’trench’
technology. The device features very
low on-state resistance and has
integral zener diodes giving ESD
protection up to 2kV. It is intended for
use in automotive and general
purpose switching applications.
BUK9535-55
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
R
DS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
V
GS
= 5 V
MAX.
55
34
85
175
35
UNIT
V
A
W
˚C
mΩ
PINNING - TO220AB
PIN
1
2
3
tab
gate
drain
source
drain
DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
d
g
s
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±V
GS
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 kΩ
-
T
mb
= 25 ˚C
T
mb
= 100 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C
-
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
10
34
24
136
85
175
UNIT
V
V
V
A
A
A
W
˚C
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 kΩ)
MIN.
-
MAX.
2
UNIT
kV
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
in free air
TYP.
-
60
MAX.
1.75
-
UNIT
K/W
K/W
April 1998
1
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS™ transistor
Logic level FET
STATIC CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL
V
(BR)DSS
V
GS(TO)
I
DSS
I
GSS
±V
(BR)GSS
R
DS(ON)
PARAMETER
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Gate-source breakdown
voltage
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
T
j
= -55˚C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175˚C
T
j
= -55˚C
V
DS
= 55 V; V
GS
= 0 V;
V
GS
=
±5
V; V
DS
= 0 V
I
G
=
±1
mA;
V
GS
= 5 V; I
D
= 17 A
T
j
= 175˚C
T
j
= 175˚C
T
j
= 175˚C
MIN.
55
50
1
0.5
-
-
-
-
-
10
-
-
TYP.
-
-
1.5
-
-
0.05
-
0.02
-
28
-
BUK9535-55
MAX.
-
-
2
-
2.3
10
500
1
10
-
35
74
UNIT
V
V
V
V
µA
µA
µA
µA
V
mΩ
mΩ
DYNAMIC CHARACTERISTICS
T
mb
= 25˚C unless otherwise specified
SYMBOL
g
fs
C
iss
C
oss
C
rss
t
d on
t
r
t
d off
t
f
L
d
L
d
L
s
PARAMETER
Forward transconductance
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Internal source inductance
CONDITIONS
V
DS
= 25 V; I
D
= 15 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
12
-
-
-
-
-
-
-
-
-
-
TYP.
-
1050
205
110
14
77
55
48
3.5
4.5
7.5
MAX.
-
1400
245
150
21
110
80
65
-
-
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
V
DD
= 30 V; I
D
= 15 A;
V
GS
= 5 V; R
G
= 10
Ω
Resistive load
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL
I
DR
I
DRM
V
SD
t
rr
Q
rr
PARAMETER
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
CONDITIONS
MIN.
-
I
F
= 25 A; V
GS
= 0 V
I
F
= 34 A; V
GS
= 0 V
I
F
= 34 A; -dI
F
/dt = 100 A/µs;
V
GS
= -10 V; V
R
= 30 V
-
-
-
-
-
TYP.
-
-
0.95
1.0
40
0.16
MAX.
34
136
1.2
-
-
-
UNIT
A
A
V
ns
µC
April 1998
2
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS™ transistor
Logic level FET
AVALANCHE LIMITING VALUE
SYMBOL
W
DSS
PARAMETER
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 20 A; V
DD
≤
25 V;
V
GS
= 5 V; R
GS
= 50
Ω;
T
mb
= 25 ˚C
MIN.
-
TYP.
-
BUK9535-55
MAX.
45
UNIT
mJ
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
1000
ID/A
RDS(ON) = VDS/ID
tp =
1 us
10us
DC
100 us
1 ms
10ms
100ms
100
10
0
20
40
60
80 100
Tmb / C
120
140
160
180
1
1
10
VDS/V
100
Fig.1. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25 ˚C
= f(T
mb
)
Normalised Current Derating
Fig.3. Safe operating area. T
mb
= 25 ˚C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
ZTH/ (K/W)
120
110
100
90
80
70
60
50
40
30
20
10
0
ID%
10
1 0.5
0.2
0.1
0.1
0.05
0.02
0
T
t
P
D
t
p
D=
t
p
T
0
20
40
60
80 100
Tmb / C
120
140
160
180
0.01
1.0E-06
0.0001
0.01
t/s
1
100
Fig.2. Normalised continuous drain current.
ID% = 100
⋅
I
D
/I
D 25 ˚C
= f(T
mb
); conditions: V
GS
≥
5 V
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
April 1998
3
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS™ transistor
Logic level FET
BUK9535-55
100
ID/A
80
VGS/V =
10
8
7
30
6.4
6.0
5.8
5.6
5.4
5.2
5.0
4.8
4.6
4.4
4.2
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
10 2.4
gfs/S
25
60
20
40
15
20
10
0
0
2
4
VDS/V 6
8
5
0
10
20
30 ID/A 40
50
60
70
Fig.5. Typical output characteristics, T
j
= 25 ˚C.
I
D
= f(V
DS
); parameter V
GS
RDS(ON)/mOhm
Fig.8. Typical transconductance, T
j
= 25 ˚C.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
BUK959-60
45
2.5
VGS/V =
4
4.2
4.4
a
Rds(on) normlised to 25degC
40
2
35
4.6
4.8
5
1.5
30
1
25
0
10
20
30 ID/A
40
50
60
0.5
-100
-50
0
50
Tmb / degC
100
150
200
Fig.6. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(I
D
); parameter V
GS
70
ID/A
60
50
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
); I
D
= 17 A; V
GS
= 5 V
VGS(TO) / V
max.
2
typ.
BUK959-60
2.5
40
30
20
1.5
min.
1
0.5
10
Tj/C =
0
0
1
175
2
3
25
VGS/V
4
5
6
7
0
-100
-50
0
50
Tj / C
100
150
200
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
) ; conditions: V
DS
= 25 V; parameter T
j
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
April 1998
4
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS™ transistor
Logic level FET
BUK9535-55
1E-01
Sub-Threshold Conduction
100
IF/A
80
1E-02
2%
typ
98%
60
1E-03
Tj/C =
40
175
25
1E-04
1E-05
20
1E-05
0
0
0.5
1
1.5
2
2.5
3
0
0.5
VSDS/V
1
1.5
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 ˚C; V
DS
= V
GS
2.5
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
WDSS%
120
110
100
90
80
2.0
Thousands pF
1.5
70
60
50
40
30
1.0
Ciss
0.5
Coss
Crss
0.1
1
VDS/V
10
100
20
10
0
20
40
60
80
100
120
Tmb / C
140
160
180
0
0.01
Fig.12. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
6
VGS/V
5
VDS = 14V
4
VDS = 44V
3
Fig.15. Normalised avalanche energy rating.
W
DSS
% = f(T
mb
); conditions: I
D
= 32 A
+
L
VDS
VGS
0
RGS
T.U.T.
R 01
shunt
VDD
-
-ID/100
2
1
0
0
5
10
QG/nC
15
20
25
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 30 A; parameter V
DS
Fig.16. Avalanche energy test circuit.
2
W
DSS
=
0.5
⋅
LI
D
⋅
BV
DSS
/(BV
DSS
−
V
DD
)
April 1998
5
Rev 1.100
ARM技术
