BUL416
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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STMicroelectronics PREFERRED SALES
TYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
VERY HIGH SWITCHING SPEED
FULLY CHARACTERISEZ AT 125
o
C
LOW SPREAD OF DYNAMIC PARAMETERS
Figure 1: Package
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n
n
APPLICATIONS
n
3
ELECTRONIC BALLAST FOR
FLUORESCENT LIGHTING
SWITCH MODE POWER SUPPLIES
TO-220
1
2
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Figure 2: Internal Schematic Diagram
DESCRIPTION
The device is manufactured using high voltage
Multi-Epitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structure to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
Table 1: Order Codes
Part Number
BUL416
# See:note on page 2
Marking
BUL416A
or (#)
BUL416B
Package
TO-220
Packaging
Tube
Table 2: Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5ms)
Base Current
Base Peak Current (t
p
< 5ms)
Total Dissipation at T
C
= 25
o
C
Storage Temperature
Value
1600
800
9
6
9
5
8
110
-65 to 150
Rev. 3
Unit
V
V
V
A
A
A
A
W
°C
1/8
January 2005
BUL416
Symbol
T
J
Parameter
Max. Operating Junction Temperature
Value
150
Unit
°C
Table 3: Thermal Data
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
1.14
62.5
o
o
C/W
C/W
Table 4: Electrical Characteristics (T
case
= 25
o
C unless otherwise specified)
Symbol
I
CES
I
CEO
Parameter
(V
BE
=0 V)
(I
B
= 0)
V
CEO(sus)
* Collector-Emitter
Sustaining Voltage
(I
B
= 0 )
V
EBO
V
CE(sat)
*
V
BE(sat)
*
h
FE
*
Emitter-Base Voltage
(I
C
= 0 )
Collector-Emitter
Saturation Voltage
I
C
= 2 A
I
C
= 4 A
I
B
= 0.4 A
I
B
= 1.33 A
I
B
= 0.4 A
I
B
= 1.33 A
V
CE
= 5 V
V
CE
= 5 V
12
25
I
B1
= 1 A
R
BB
= 0
W
L = 200 µH
I
B1
= 1 A
R
BB
= 0
W
L = 200 µH
(see figure 12)
3
680
µs
ns
2.3
650
µs
ns
27
40
10
1.5
3
1.2
1.5
V
V
V
V
I
E
= 10 mA
9
V
I
C
= 100 mA
L = 25 mH
800
V
Test Conditions
T
j
= 125
o
C
Min.
Typ.
Max.
100
500
250
Unit
µA
µA
µA
Collector Cut-off Current V
CE
= 1600 V
V
CE
= 1600 V
Collector Cut-off Current V
CE
= 800 V
Base-Emitter Saturation I
C
= 2 A
Voltage
I
C
= 4 A
DC Current Gain
I
C
= 10 mA
I
C
= 0.7 A
Group A
INDUCTIVE LOAD
Group B
I
C
= 3 A
V
BE(off)
= -5 V
V
clamp
= 200 V
(see figure 12)
I
C
= 3 A
V
BE(off)
= -5 V
V
clamp
= 200 V
t
s
t
f
Storage Time
Fall Time
INDUCTIVE LOAD
t
s
t
f
Storage Time
Fall Time
T
j
= 100
o
C
* Pulsed: Pulsed duration = 300
ms,
duty cycle
≤
1.5
%.
#
Note: Product is pre-selected in DC current gain (Group A and Group B). STMicroelectronics reserves the right to ship either groups ac-
cording to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails.
2/8
BUL416
Figure 3: Safe Operating Area
Figure 6: Derating Curve
Figure 4: DC Current Gain
Figure 7: DC Current Gain
Figure 5: Collector-Emitter Saturation Voltage
Figure 8: Base-Emitter Saturation Voltage
3/8
BUL416
Figure 9: Inductive Load Fall Time
Figure 11: Resistive Load Stoarage Time
Figure 10: Reverse Biased SOA
4/8
BUL416
Figure 12: Inductive Load Switching Test Circuit
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
5/8
嵌入式系统
