LAB
MECHANICAL DATA
Dimensions in mm (inches)
4.69
5.31
1.49
2.49
(0.185)
(0.209)
(0.059)
(0.098)
6.15
(0.242)
BSC
15.49 (0.610)
16.26 (0.640)
20.80 (0.819)
21.46 (0.845)
3.55 (0.140)
3.81 (0.150)
SEME
BUL50A
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
•
•
•
•
•
SEMEFAB DESIGNED AND DIFFUSED DIE
HIGH VOLTAGE
FAST SWITCHING
HIGH ENERGY RATING
EFFICIENT POWER SWITCHING
4.50
(0.177)
M ax.
1
2
3
1.65 (0.065)
2.13 (0.084)
2.87 (0.113)
3.12 (0.123)
0.40 (0.016)
0.79 (0.031)
19.81 (0.780)
20.32 (0.800)
1.01 (0.040)
1.40 (0.055)
2.21 (0.087)
2.59 (0.102)
5.25 (0.215)
BSC
TO–247
Pin 1 – Base
Pad 2 – Collector
15.2
max
14
2.0
4.6
max
Pad 3 – Emitter
• MILITARY AND HI–REL VERSIONS
AVAILABLE IN METAL AND CERAMIC
SURFACE MOUNT PACKAGES
4.4
FEATURES
21.0
max
12.7
max
4.25
Dia.
4.15
1
2
3
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
13.6
min
5.5
11
1.15
0.95
0.4
1.6
SOT93
Pin 1 – Base
Pad 2 – Collector
Pad 3 – Emitter
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
I
C(PK)
I
B
P
tot
T
stg
Semelab plc.
Collector – Base Voltage
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Continuous Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
case
= 25°C
Operating and Storage Temperature Range
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
1000V
500V
10V
15A
30A
5A
125W
–55 to +175°C
Prelim. 3/95
LAB
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
V
CEO(sus)
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
SEME
BUL50A
Test Conditions
Min.
500
1000
10
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS
Collector – Emitter Sustaining Voltage I
C
= 100mA
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Base Cut–Off Current
Collector – Emitter Cut–Off Current
Emitter Cut–Off Current
I
C
= 1mA
I
E
= 1mA
V
CB
= 1000V
T
C
= 125°C
I
B
= 0
V
EB
= 5V
I
C
= 0
I
C
= 0.5A
I
C
= 5A
I
C
= 10A
I
C
= 0.5A
T
C
= 125°C
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
T
C
= 125°C
I
B
= 0.1A
I
B
= 1A
I
B
= 2A
I
B
= 1A
I
B
= 2A
V
CE
= 4V
V
CE
= 4V
f = 1MHz
V
CE
= 500V
V
10
100
100
10
100
m
A
m
A
m
A
15
10
5
4
50
20
12
10
0.05
0.2
0.3
0.9
1.0
0.8
20
45
0.1
0.4
1.2
1.1
1.3
1.0
V
V
MHz
pF
V
—
h
FE*
DC Current Gain
V
CE(sat)*
Collector – Emitter Saturation Voltage I
C
= 5A
I
C
= 10A
I
C
= 5A
I
C
= 10A
I
C
= 3A
I
C
= 0.2A
V
CB
= 20V
V
BE(sat)*
V
BE(on)
f
t
C
ob
Base – Emitter Saturation Voltage
Base – Emitter On Voltage
DYNAMIC CHARACTERISTICS
Transition Frequency
Output Capacitance
* Pulse test t
p
= 300
m
s ,
d
< 2%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 3/95
