LAB
MECHANICAL DATA
Dimensions in mm
6.40 (0.252)
6.78 (0.267)
5.21 (0.205)
5.46 (0.215)
SEME
BUL68B
2.18 (0.086)
2.44 (0.096)
0.84 (0.033)
0.94 (0.037)
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
Designed for use in
electronic ballast applications
•
•
•
•
SEMEFAB DESIGNED AND DIFFUSED DIE
HIGH VOLTAGE
FAST SWITCHING
HIGH ENERGY RATING
1.09 (0.043)
1.30 (0.051)
5.97 (0.235)
6.22 (0.245)
1
2
3
0.76 (0.030)
1.14 (0.045)
0.64 (0.025)
0.89 (0.035)
8.89 (0.350)
9.78 (0.385)
2.31
(0.091)
Typ.
2.31
(0.091)
Typ.
0.46 (0.018)
0.61 (0.024)
FEATURES
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
Pin 3 – Emitter
4.60 (0.181)
Typ.
1.04 (0.041)
1.14 (0.045)
I-PAK(TO251)
Pin 1 – Base
Pin 2 – Collector
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
I
C(PK)
I
B
P
tot
T
stg
Semelab plc.
Collector – Base Voltage(I
E
=0)
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Continuous Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
case
= 25°C
Operating and Storage Temperature Range
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
200V
100V
10V
12A
17A
5A
20W
–55 to +150°C
Prelim. 2/97
LAB
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
V
CEO(sus)
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
SEME
BUL68B
Test Conditions
Min.
100
250
10
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS
Collector – Emitter Sustaining Voltage I
C
= 10mA
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Base Cut–Off Current
Collector – Emitter Cut–Off Current
Emitter Cut–Off Current
I
C
= 1mA
I
E
= 1mA
V
CB
= 250V
T
C
= 125°C
I
B
= 0
V
EB
= 9V
I
C
= 0
I
C
= 0.3A
I
C
= 3A
I
C
= 5A
I
C
= 1A
T
C
= 125°C
V
CE
= 4V
V
CE
= 4V
V
CE
= 1V
T
C
= 125°C
I
B
= 0.1A
I
B
= 0.3A
I
B
= 0.6A
I
B
= 0.3A
I
B
= 0.6A
V
CE
= 4V
f = 1MHz
V
CE
= 90V
V
10
100
100
10
100
µA
µA
µA
30
25
8
80
60
—
h
FE*
DC Current Gain
0.2
0.6
1.5
1.1
1.4
20
44
V
V
V
CE(sat)*
Collector – Emitter Saturation Voltage I
C
= 3A
I
C
= 6A
I
C
= 3A
I
C
= 6A
I
C
= 0.2A
V
CB
= 10V
V
BE(sat)*
Base – Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
Transition Frequency
Output Capacitance
f
t
C
ob
MHz
pF
* Pulse test t
p
= 300µs ,
δ
< 2%
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/97
