首页 > 器件类别 > 无线/射频/通信 > 射频和微波

BX6670

RF AMPLIFIER MODEL

器件类别:无线/射频/通信    射频和微波   

厂商名称:API Technologies

厂商官网:http://www.apitech.com/about-api

下载文档
器件参数
参数名称
属性值
厂商名称
API Technologies
包装说明
H1
Reach Compliance Code
compliant
其他特性
LOW NOISE, I/P POWER-MAX (PEAK)=27DBM
构造
COAXIAL
增益
6 dB
最大输入功率 (CW)
17 dBm
最大工作频率
250 MHz
最小工作频率
10 MHz
最高工作温度
85 °C
最低工作温度
-55 °C
射频/微波设备类型
WIDE BAND LOW POWER
最大电压驻波比
2.5
Base Number Matches
1
文档预览
RF AMPLIFIER
MODE
TM6670
Features
!
!
!
!
Low Noise Figure: 1.8 dB Typical
Higher Output Power: >+20 dBm Typical
Operating Temp. -55 ºC to +85 ºC
Environmental Screening Available
Available as:
TM6670, 4 Pin TO-8 (T4)
TN6670, 4 Pin Surface Mount (SM3)
BX6670, Connectorized Housing (H1)
Typical Intermodulation Performance at 25 ºC
Second Order Harmonic Intercept Point ....... +52 dBm (Typ.)
Second Order Two Tone Intercept Point ........ +46 dBm (Typ.)
Third Order Two Tone Intercept Point ............ +36 dBm (Typ.)
Specifications
CHARACTERISTIC
Frequency
Gain (dB)
Power @ 1 dB
Comp. (dBm)
Reverse
Isolation (dB)
VSWR
In
Out
Noise figure (dB)
Power
Vdc
mA
TYPICAL
Ta= 25
ºC
10 - 300 MHz
8.0
>+21
-11
<1.5:1
<1.5:1
1.8
+15
25
MIN/MAX
Ta = -55
ºC
to +85
ºC
10 - 250 MHz
6.0 Min.
+18.0 Min.
-10
2.5:1 Max.
2.5:1 Max.
3.0 Max.
+15
30 Max.
Absolute Maximum (No Damage) Ratings
Ambient Operating Temperature ................ -55ºC to +100 ºC
Storage Temperature ................................. -62ºC to +125 ºC
Case Temperature .................................................. +125 ºC
DC Voltage .......................................................... +18 Volts
Continuous RF Input Power .................................. +17 dBm
Short Term RF Input Power .... 100 Milliwatts (1 Minute Max.)
Maximum Peak Power .................... 0.5 Watt (3
µsec
Max.)
Note: Care should always be taken to effectively ground the case of each unit.
Typical Performance Data
10
9
8
7
6
Start 10 MHz
Stop 250 MHz
Gain (dB)
0
- 5
- 10
- 15
- 20
Reverse Isolation (dB)
3
2
1
Start 10 MHz
Stop 250 MHz
Start 10 MHz
Noise Figure (dB)
Stop 250 MHz
+23
+22
+21
+20
+19
1 dB Comp. (dBm)
2.0
1.5
1.0
Input VSWR
2.0
1.5
1.0
Output VSWR
Start 10 MHz
Stop 250 MHz
Start 10 MHz
Stop 250 MHz
Start 10 MHz
Stop 250 MHz
Legend
+25 ºC
+85 ºC - - - - - - -55 ºC
Spectrum Microwave · 2144 Franklin Drive N.E. · Palm Bay, Florida 32905 · PH (888) 553-7531 · Fax (888) 553-7532
Rev.
9/9/09
www.SpectrumMicrowave.com
Spectrum Microwave · 2707 Black Lake Place · Philadelphia, Pennsylvania 19154 · PH (215) 464-4000 · Fax (215) 464-4001
查看更多>
参数对比
与BX6670相近的元器件有:TM6670、TN6670。描述及对比如下:
型号 BX6670 TM6670 TN6670
描述 RF AMPLIFIER MODEL RF AMPLIFIER MODEL RF AMPLIFIER MODEL
厂商名称 API Technologies API Technologies API Technologies
Reach Compliance Code compliant compli compli
其他特性 LOW NOISE, I/P POWER-MAX (PEAK)=27DBM LOW NOISE, I/P POWER-MAX (PEAK)=27DBM LOW NOISE, I/P POWER-MAX (PEAK)=27DBM
构造 COAXIAL COMPONENT COMPONENT
增益 6 dB 6 dB 6 dB
最大输入功率 (CW) 17 dBm 17 dBm 17 dBm
最大工作频率 250 MHz 250 MHz 250 MHz
最小工作频率 10 MHz 10 MHz 10 MHz
最高工作温度 85 °C 85 °C 85 °C
最低工作温度 -55 °C -55 °C -55 °C
射频/微波设备类型 WIDE BAND LOW POWER WIDE BAND LOW POWER WIDE BAND LOW POWER
最大电压驻波比 2.5 2.5 2.5
包装说明 H1 T4, TO-8, 4 PIN -
热门器件
热门资源推荐
器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
需要登录后才可以下载。
登录取消