型号 | BXY18AB2 | BBY33BB2 | BXY18AB6 | BXY18A2 | BBY33DA2 |
---|---|---|---|---|---|
描述 | Step Recovery Diode, S Band to X Band, Silicon, | Variable Capacitance Diode, 1.2pF C(T), 25V, Silicon, Abrupt, | Step Recovery Diode, L Band to KU Band, Silicon, | Step Recovery Diode, S Band to C Band, Silicon, | Variable Capacitance Diode, 2pF C(T), 30V, Silicon, Abrupt, |
厂商名称 | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最小击穿电压 | 25 V | 25 V | 15 V | 25 V | 30 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
标称二极管电容 | 1.4 pF | 1.2 pF | 0.3 pF | 1 pF | 2 pF |
二极管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
二极管类型 | STEP RECOVERY DIODE | VARIABLE CAPACITANCE DIODE | STEP RECOVERY DIODE | STEP RECOVERY DIODE | VARIABLE CAPACITANCE DIODE |
JESD-30 代码 | O-CEMW-N2 | O-XEMW-N2 | O-CEMW-N2 | O-CEMW-N2 | O-XEMW-N2 |
元件数量 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 2 | 2 | 2 | 2 | 2 |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED |
封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND |
封装形式 | MICROWAVE | MICROWAVE | MICROWAVE | MICROWAVE | MICROWAVE |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
最大重复峰值反向电压 | 35 V | 25 V | 35 V | 35 V | 30 V |
表面贴装 | YES | YES | YES | YES | YES |
端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
端子位置 | END | END | END | END | END |
其他特性 | CHARGE STORAGE VARACTOR | - | CHARGE STORAGE VARACTOR | CHARGE STORAGE VARACTOR | - |
最大二极管电容 | 1.6 pF | - | 0.5 pF | 1.3 pF | - |
最小二极管电容 | 1.1 pF | - | 0.25 pF | 0.7 pF | - |
频带 | S BAND TO X BAND | - | L BAND TO KU BAND | S BAND TO C BAND | - |