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BY398P-E3/66

DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
零件包装代码
DO-201AD
包装说明
O-PALF-W2
针数
2
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
FREE WHEELING DIODE, LOW LEAKAGE CURRENT
应用
EFFICIENCY
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-201AD
JESD-30 代码
O-PALF-W2
JESD-609代码
e3
最大非重复峰值正向电流
100 A
元件数量
1
相数
1
端子数量
2
最高工作温度
125 °C
最低工作温度
-50 °C
最大输出电流
3 A
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT APPLICABLE
认证状态
Not Qualified
最大重复峰值反向电压
400 V
最大反向恢复时间
0.5 µs
表面贴装
NO
端子面层
MATTE TIN
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT APPLICABLE
Base Number Matches
1
文档预览
BY396P thru BY399P
Vishay General Semiconductor
Soft Recovery Fast-Switching Plastic Rectifier
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
t
rr
I
R
V
F
T
j
max.
3.0 A
100 V to 800 V
100 A
500 ns
10 µA
1.25 V
125 °C
DO-201AD
Features
Fast switching for high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
Solder Dip 260 °C, 40 seconds
Mechanical Data
Case:
DO-201AD, molded epoxy body
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and JESD22-B102D
Polarity:
Color band denotes cathode end
Typical Applications
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for
consumer and Telecommunication.
(Note: These devices are not Q101 qualified. There-
fore, the devices specified in this datasheet have not
been designed for use in automotive or Hi-Rel appli-
cations.)
Maximum Ratings
(T
A
= 25 °C unless otherwise noted)
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 0.375" (9.5 mm) lead lengths
at T
A
= 50 °C
Peak forward surge current 10 ms single half sine-wave superimposed on
rated load at T
A
= 50 °C
Maximum repetitive peak forward surge at f < 15 KHz
Operating junction temperature range
Storage temperature range
Symbols BY396P BY397P BY398P BY399P
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
FRM
T
J
T
STG
100
70
100
200
140
200
3.0
100
10
- 50 to + 125
- 50 to + 150
400
280
400
800
560
800
Units
V
V
V
A
A
A
°C
°C
Document Number 88542
10-Oct-05
www.vishay.com
1
BY396P thru BY399P
Vishay General Semiconductor
Electrical Characteristics
(T
A
= 25 °C unless otherwise noted)
Parameter
Maximum instantaneous forward
voltage
Maximum DC reverse current at
rated DC blocking voltage
Maximum reverse recovery time
Maximum forward recovery time
Typical junction capacitance
at 3.0 A
T
A
= 25 °C
T
A
= 100 C
at I
F
= 10 mA, I
R
= 10 mA,
I
rr
= 1.0 mA
at 100 mA, di/dt = 50 A/µs
at 4.0 V, 1 MHz
Test condition
Symbols BY396P BY397P BY398P BY399P
V
F
I
R
t
rr
t
fr
C
J
1.25
10
500
500
1.0
28
Units
V
µA
ns
µs
pF
Thermal Characteristics
(T
A
= 25 °C unless otherwise noted)
Parameter
Typical thermal resistance
Notes:
(1) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length with both leads to heat sink
(1)
Symbols BY396P BY397P BY398P BY399P
R
θJA
22
Units
°C/W
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise noted)
4.0
200
Average Forward Rectified Current (A)
Peak Forward Surge Current (A)
Resistive or
Inductive Load
3.0
T
A
= 50 °C
10 ms Single Half Sine-Wave
At Rated Load
100
2.0
1.0
0.375” (9.5 mm) Lead Length
0
0
20
40
60
80
100
120
140
10
1
10
100
Ambient Temperature (°C)
Number
of Cycles at 50 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 88542
10-Oct-05
BY396P thru BY399P
Vishay General Semiconductor
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50mVp-p
100
Instantaneous Forward Current (A)
10
1
T
J
= 25 °C
Pulse
Width
= 300
µs
1% Duty Cycle
0.1
0.01
0.4
Junction Capacitance (pF)
1.8
2.0
10
1
10
0.6
0.8
1.0
1.2
1.4
1.6
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
10
Instantaneous Reverse Current (µA)
T
J
= 100 °C
1
T
J
= 50 °C
0.1
T
J
= 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse
Voltage
(%)
Figure 4. Typical Reverse Characteristics
Package outline dimensions in inches (millimeters)
DO-201AD
1.0 (25.4)
Min.
0.210 (5.3)
0.190 (4.8)
Dia.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
Min.
0.052 (1.32)
0.048 (1.22)
Dia.
Document Number 88542
10-Oct-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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