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BY399

3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD

器件类别:半导体    分立半导体   

厂商名称:重庆平伟实业

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CHONGQING PINGYANG ELECTRONICS CO.,LTD.
BY396 THRU BY399
FAST RECOVERY PLASTIC RECTIFIER
VOLTAGE:100-800V
CURRENT:3.0A
FEATURES
·Fast
switching
·Low
leakage
·Low
forward voltage drop
·High
current capability
·High
surge capability
·High
reliability
DO-27
1.0(25.4)
MIN.
.375(9.5)
.335(8.5)
.052(1.3)
.048(1.2)
DIA.
MECHANICAL DATA
·Case:
Molded plastic
·Epoxy:
UL94V-0 rate flame retardant
·Lead:
MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color
band denotes cathode end
·Mounting
position:
Any
·Weight:
1.18 grams
1.0(25.4)
MIN.
.220(5.6)
.187(5.0)
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
BY396
100
70
100
BY397
200
140
200
3.0
125
1.3
10.0
BY398
400
280
400
BY399
800
560
800
units
V
V
V
A
A
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward rectified Current
at T
A
=75°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
Maximum Instantaneous forward Voltage at 3.0A
DC
Maximum DC Reverse Current at Rated DC
Blocking Voltage T
A
=25°C
Maximum Full Load Reverse Current Full Cycle
Average,.375”(9.5mm) lead length at T
L
=55°C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Notes:
V
RRM
V
RMS
V
DC
I
o
I
FSM
V
F
I
R
100
t
rr
C
J
150
40
500
µA
nS
pF
1.Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0 volts
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参数对比
与BY399相近的元器件有:BY396、BY397、BY398。描述及对比如下:
型号 BY399 BY396 BY397 BY398
描述 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD
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