BY448 , BY458
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Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
949539
• High voltage rectification
• Efficiency diode in horizontal deflection circuits
MECHANICAL DATA
Case:
SOD-57
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 369 mg
ORDERING INFORMATION
(Example)
DEVICE NAME
BY458
BY458
ORDERING CODE
BY458TR
BY458TAP
TAPED UNITS
5000 per 10" tape and reel
5000 per ammopack
MINIMUM ORDER QUANTITY
25 000
25 000
PARTS TABLE
PART
BY448
BY458
TYPE DIFFERENTIATION
V
R
= 1500 V, I
FAV
= 2 A
V
R
= 1200 V, I
FAV
= 2 A
PACKAGE
SOD-57
SOD-57
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Peak forward surge current
Average forward current
Junction temperature
Storage temperature range
Non repetitive reverse avalanche energy
l
(BR)R
= 0.4 A
TEST CONDITION
See electrical characteristics
t
p
= 10 ms, half sine wave
PART
BY448
BY458
SYMBOL
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FAV
T
j
T
stg
E
R
VALUE
1500
1200
30
2
140
- 55 to + 175
10
UNIT
V
V
A
A
°C
°C
mJ
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
l = 10 mm, T
L
= constant
On PC board with spacing 25 mm
SYMBOL
R
thJA
R
thJA
VALUE
45
100
UNIT
K/W
K/W
Rev. 1.8, 27-Aug-12
Document Number: 86006
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BY448 , BY458
www.vishay.com
Vishay Semiconductors
TEST CONDITION
I
F
= 3 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 140 °C
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
I
F
= 1 A, - dI
F
/dt = 0.05 A/μs
SYMBOL
V
F
I
R
I
R
t
rr
t
rr
MIN.
-
-
-
-
-
TYP.
-
-
-
-
-
MAX
1.6
3
140
2000
20
UNIT
V
μA
μA
ns
μs
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Reverse recovery time
Total reverse recovery time
TYPICAL CHARACTERISTICS
(T
amb
= 25
°C,
unless otherwise specified)
R
thJA
- Ther. Resist. Junction/Ambient (K/W)
120
I
FAV
- Average Forward Current (A)
l
100
80
l
2.5
V
R
= V
RRM
2.0
half
sine
wave
R
thJA
= 45 K/W
l = 10 mm
1.5
T
L
= constant
60
40
20
0
0
949101
1.0
0.5
R
thJA
= 100 K/W
PCB: d = 25 mm
5
10
15
20
25
30
16418
0
0
25
50
75
100
125
150
l - Lead Length (mm)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
100
T
j
= 150 °C
1000
V
R
= V
RRM
I
R
- Reverse Current (μA)
I
F
- Forward Current (A)
10
100
1
T
j
= 25 °C
0.1
10
0.01
0.001
0
16417
1
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
16419
25
50
75
100
125
150
V
F
- Forward Voltage (V)
T
j
- Junction Temperature (°C)
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 4 - Reverse Current vs. Junction Temperature
Rev. 1.8, 27-Aug-12
Document Number: 86006
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BY448 , BY458
www.vishay.com
Vishay Semiconductors
P
R
- Reverse Power Dissipation (mW)
400
V
R
= V
RRM
35
f = 1 MHz
300
250
200
150
100
50
0
25
50
75
100
125
150
P
R
- Limit at 80 % V
R
P
R
- Limit at 100 % V
R
C
D
- Diode Capacitance (pF)
350
30
25
20
15
10
5
0
0.1
1
10
100
16420
T
j
- Junction Temperature (°C)
16421
V
R
- Reverse Voltage (V)
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-57
0.82 (0.032) max.
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
Rev. 1.8, 27-Aug-12
Document Number: 86006
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
3.6 (0.142) max.
20543
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www.vishay.com
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Revision: 08-Feb-17
1
Document Number: 91000
