DIODE 0.05 A, 1800 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, SOD-61A, 2 PIN, Signal Diode
厂商名称:NXP(恩智浦)
厂商官网:https://www.nxp.com
下载文档型号 | BY584 | BY584T/R |
---|---|---|
描述 | DIODE 0.05 A, 1800 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, SOD-61A, 2 PIN, Signal Diode | DIODE 0.05 A, 1800 V, SILICON, SIGNAL DIODE, Signal Diode |
厂商名称 | NXP(恩智浦) | NXP(恩智浦) |
包装说明 | E-LALF-W2 | E-LALF-W2 |
Reach Compliance Code | unknown | unknown |
ECCN代码 | EAR99 | EAR99 |
其他特性 | LEAKAGE CURRENT IS NOT AT 25 DEG C | LEAKAGE CURRENT IS NOT AT 25 DEG C |
外壳连接 | ISOLATED | ISOLATED |
配置 | SINGLE | SINGLE |
二极管元件材料 | SILICON | SILICON |
二极管类型 | RECTIFIER DIODE | RECTIFIER DIODE |
JESD-30 代码 | E-LALF-W2 | E-LALF-W2 |
元件数量 | 1 | 1 |
端子数量 | 2 | 2 |
最高工作温度 | 120 °C | 120 °C |
最大输出电流 | 0.05 A | 0.05 A |
封装主体材料 | GLASS | GLASS |
封装形状 | ELLIPTICAL | ELLIPTICAL |
封装形式 | LONG FORM | LONG FORM |
认证状态 | Not Qualified | Not Qualified |
最大重复峰值反向电压 | 1800 V | 1800 V |
最大反向恢复时间 | 0.2 µs | 0.2 µs |
表面贴装 | NO | NO |
端子形式 | WIRE | WIRE |
端子位置 | AXIAL | AXIAL |