BYM12-50 thru BYM12-400, EGL41A thru EGL41G
Vishay General Semiconductor
Surface Mount Glass Passivated Ultrafast Rectifier
®
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
j
max.
1.0 A
50 V to 400 V
30 A
50 ns
1.0 V, 1.25 V
175 °C
ted*
aten
P
*Glass-plastic encapsulation
is covered by
Patent No. 3,996,602,
brazed-lead assembly to
Patent No. 3,930,306
DO-213AB (GL41)
Features
•
•
•
•
•
•
•
•
Cavity-free glass-passivated junction
Ideal for automated placement
Ultrafast reverse recovery time
Low switching losses, high efficiency
High forward surge capability
Meets environmental standard MIL-S-19500
Meets MSL level 1, per J-STD-020C
Solder Dip 260 °C, 40 seconds
Mechanical Data
Case:
DO-213AB, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Two bands indicate cathode end - 1st band
denotes device type and 2nd band denotes repetitive
peak reverse voltage rating
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer, automotive and
Telecommunication
Maximum Ratings
T
A
= 25 °C unless otherwise specified
Parameter
Fast efficient device: 1st band is
Green
Polarity color bands (2nd Band)
Maximum repetitive peak reverse
voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified
current at T
T
= 75 °C
Peak forward surge current 8.3 ms
single half sine-wave
superimposed on rated load
Operating junction and storage
temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
Symbol
BYM12-50
EGL41A
Gray
50
35
50
BYM12-100 BYM12-150 BYM12-200 BYM12-300
EGL41B
Red
100
70
100
EGL41C
Pink
150
105
150
1.0
30
EGL41D
Orange
200
140
200
EGL41F
Brown
300
210
300
BYM12-400
EGL41G
Yellow
400
280
400
V
V
V
A
A
Unit
T
J
,T
STG
- 65 to + 175
°C
Document Number 88581
10-Aug-05
www.vishay.com
1
BYM12-50 thru BYM12-400, EGL41A thru EGL41G
Vishay General Semiconductor
Electrical Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Maximum
instantaneous
forward voltage
(1)
Maximum DC
reverse current at
rated DC blocking
voltage
(1)
Max. reverse
recovery time
Typical junction
capacitance
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
at I
F
= 0.5 A,
I
R
= 1.0 A,
I
rr
= 0.25 A
at 4.0 V, 1 MHz
t
rr
50
ns
T
A
= 25 °C
T
A
= 125 °C
I
R
5.0
50
µA
Test condition
at 1.0 A
Symbol BYM12-50 BYM12-100 BYM12-150 BYM12-200 BYM12-300 BYM12-400
EGL41A
V
F
EGL41B
1.0
EGL41C
EGL41D
EGL41F
1.25
EGL41G
V
Unit
C
J
20
14
pF
Thermal Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Maximum thermal resistance
(1, 2)
Notes:
(1) Thermal resistance from junction to ambient, 0.24 x 0.24" (6.0 x 6.0 mm) copper pads to each terminal
(2) Thermal resistance from junction to terminal, 0.24 x 0.24" (6.0 x 6.0 mm) copper pads to each terminal
Symbol
R
θJA
R
θJT
BYM12-50 BYM12-100 BYM12-150 BYM12-200 BYM12-300
EGL41A
EGL41B
EGL41C
60
30
EGL41D
EGL41F
BYM12-400
EGL41G
°C/W
Unit
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise specified)
1.0
30
Average Forward Rectified Current (A)
Peak Forward Surge Current (A)
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
25
20
0.5
15
Resistive or Inductive Load
10
5.0
0
1
10
100
0
0
25
50
75
100
125
150
175
Lead Temperature ( °C)
Number of Cycles at 60 H
Z
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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Document Number 88581
10-Aug-05
BYM12-50 thru BYM12-400, EGL41A thru EGL41G
Vishay General Semiconductor
70
60
T
J
= 25 °C
f = 1.0 MH
Z
Vsig = 50mVp-p
50
Instantaneous Forward Current (A)
Pulse Width = 300
µs
1% Duty Cycle
T
J
= 150 °C
Junction Capacitance (pF)
10
50
40
30
20
10
0
0.1
1
T
J
= 25 °C
0.1
EGL41A - EGL41D
EGL41F - EGL41G
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
EGL41A - EGL41D
EGL41F - EGL41G
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
Instantaneous Reverse Leakage Current
(µA)
1,000
100
100
T
J
= 150°C
10
T
J
= 100 °C
Transient Thermal Impedance (°C/W)
80
100
10
1
1
0.1
T
J
= 25 °C
0.01
0
20
40
60
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Pulse Duration, sec. (t)
Figure 4. Typical Reverse Leakage Characteristics
Figure 6. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-213AB (GL41)
SOLDERABLE ENDS
1st BAND
0
D2 = D1+ 0.008 (0.20)
-
D2
D1=
0.105
0.095
(2.67)
(2.41)
0.022 (0.56)
0.018 (0.46)
0.205 (5.2)
0.185(4.7)
0.022 (0.56)
0.018 (0.46)
1st band denotes type and positive end (cathode)
Document Number 88581
10-Aug-05
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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