Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
GENERAL DESCRIPTION
Glass passivated high efficiency
rugged dual rectifier diodes in a
plastic envelope suitable for surface
mounting, featuring low forward
voltage drop, ultra-fast recovery
times
and
soft
recovery
characteristic. These devices can
withstand reverse voltage transients
and have guaranteed reverse surge
and ESD capability. They are
intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and switching losses are
essential.
BYQ30EB series
QUICK REFERENCE DATA
SYMBOL
V
RRM
V
F
I
O(AV)
t
rr
I
RRM
PARAMETER
BYQ30EB-
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
Reverse recovery time
Repetitive peak reverse
current per diode
MAX.
100
100
0.95
16
25
0.2
MAX.
150
150
0.95
16
25
0.2
MAX.
200
200
0.95
16
25
0.2
UNIT
V
V
A
ns
A
PINNING - SOT404
PIN
1
2
3
mb
DESCRIPTION
no connection
cathode
anode
cathode
PIN CONFIGURATION
mb
SYMBOL
k
tab
2
1
3
a
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
O(RMS)
I
FRM
I
FSM
PARAMETER
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Output current (both diodes
conducting)
1
RMS forward current
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
square wave
δ
= 0.5; T
mb
≤
104 ˚C
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-40
-
-100
100
100
100
MAX.
-150
150
150
150
16
23
16
100
110
50
0.2
0.2
150
150
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
2
s
A
A
˚C
˚C
I
2
t
I
RRM
I
RSM
T
stg
T
j
t = 25
µs; δ
= 0.5;
T
mb
≤
104 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RWM(max)
2
I t for fusing
t = 10 ms
Repetitive peak reverse current t
p
= 2
µs; δ
= 0.001
per diode
Non-repetitive peak reverse
t
p
= 100
µs
current per diode
Storage temperature
Operating junction temperature
1
Neglecting switching and reverse current losses.
October 1997
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
BYQ30EB series
MIN.
-
MAX.
8
UNIT
kV
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes conducting
minimum footprint, FR4 board
MIN.
-
-
-
TYP.
-
-
50
MAX.
3.0
2.5
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
PARAMETER
Forward voltage (per diode)
Reverse current (per diode)
CONDITIONS
I
F
= 8 A; T
j
= 150˚C
I
F
= 16 A; T
j
= 150˚C
I
F
= 16 A;
V
R
= V
RWM
; T
j
= 100 ˚C
V
R
= V
RWM
MIN.
-
-
-
-
-
TYP.
0.83
1.0
0.98
0.3
2
MAX.
0.95
1.15
1.25
0.6
30
UNIT
V
V
mA
µA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
Q
s
t
rr
I
rrm
V
fr
PARAMETER
Reverse recovery charge (per
diode)
Reverse recovery time (per
diode)
Peak reverse recovery current
(per diode)
Forward recovery voltage (per
diode)
CONDITIONS
I
F
= 2 A; V
R
≥
30 V; -dI
F
/dt = 20 A/µs
I
F
= 1 A; V
R
≥
30 V;
-dI
F
/dt = 100 A/µs
I
F
= 1 A; V
R
≥
30 V;
-dI
F
/dt = 50 A/µs; T
j
= 100 ˚C
I
F
= 1 A; dI
F
/dt = 10 A/µs
MIN.
-
-
-
-
TYP.
4
20
1.0
1
MAX.
11
25
2
-
UNIT
nC
ns
A
V
October 1997
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ30EB series
I
dI
F
dt
F
12
10
Forward dissipation, PF (W) BYQ30
Vo = 0.75 V
Rs 0.025 Ohms
Tmb(max) / C
114
120
t
a = 1.57
rr
time
8
2.8
6
4
4
1.9
2.2
126
132
138
144
150
8
Q
I
R
I
s
10%
100%
2
0
rrm
0
1
2
3
4
5
6
Average forward current, IF(AV) (A)
7
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
)per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
trr / ns
1000
I
F
100
IF=10A
time
IF=1A
VF
V
VF
time
fr
10
1
1
10
dIF/dt (A/us)
100
Fig.2. Definition of V
fr
Fig.5. Maximum t
rr
at T
j
= 25 ˚C.
12
10
8
6
4
2
Forward dissipation, PF (W) BYQ30
Vo = 0.75 V
Rs = 0.025 Ohms
0.5
0.2
0.1
I
t
p
Tmb(max) / C
D = 1.0
trr / ns
114
120
126
132
1000
100
IF=10A
IF=1A
D=
t
p
T
t
138
144
150
12
10
T
0
0
2
4
6
8
Average forward current, IF(AV) (A)
10
1
1
10
dIF/dt (A/us)
100
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
Fig.6. Maximum t
rr
at T
j
= 100 ˚C.
October 1997
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ30EB series
10
Irrm / A
100 Qs / nC
IF=10A
1
IF=1A
IF=10A
5A
2A
1A
10
0.1
0.01
1
10
-dIF/dt (A/us)
100
1.0
1.0
10
-dIF/dt (A/us)
100
Fig.7. Maximum I
rrm
at T
j
= 25 ˚C.
Fig.10. Maximum Q
s
at T
j
= 25 ˚C.
10
Irrm / A
10
Transient thermal impedance, Zth j-mb (K/W)
IF=10A
1
IF=1A
1
0.1
0.1
P
D
t
p
t
0.01
1
10
-dIF/dt (A/us)
100
0.01
10 us
1 ms
0.1 s
pulse width, tp (s)
10 s
Fig.8. Maximum I
rrm
at T
j
= 100 ˚C.
Fig.11. Transient thermal impedance; Z
th j-mb
= f(t
p
).
20
Forward current, IF (A)
Tj = 25 C
Tj = 150 C
BYQ30
15
10
typ
5
max
0
0
0.5
1
1.5
Forward voltage, VF (V)
2
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
October 1997
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
10.3 max
4.5 max
1.4 max
BYQ30EB series
11 max
15.4
2.5
0.85 max
(x2)
2.54 (x2)
0.5
Fig.12. SOT404 : centre pin connected to mounting base.
Notes
1. Epoxy meets UL94 V0 at 1/8".
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.13. SOT404 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
October 1997
5
Rev 1.000
