BYR29X-800
Ultrafast power diode
19 October 2017
Product data sheet
1. General description
Ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package.
2. Features and benefits
•
•
•
•
Fast switching
Isolated plastic package
Low forward voltage drop
Soft recovery characteristic
3. Applications
•
•
Discontinuous Current Mode (DCM) Power Factor Correction (PFC)
High frequency switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
V
R
I
F(AV)
I
FRM
I
FSM
Parameter
reverse voltage
average forward
current
Conditions
DC
δ = 0.5 ; T
h
≤ 73 °C; SQW;
Fig. 1;
Fig. 2; Fig. 3
[1]
Min
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
1.07
1.75
-
60
Max
800
8
16
60
66
1.5
1.95
1.7
75
Unit
V
A
A
A
A
V
V
V
ns
repetitive peak forward δ = 0.5 ; t
p
= 25 µs; T
h
≤ 73 °C; SQW
current
non-repetitive peak
forward current
t
p
= 10 ms; T
j(init)
= 25 °C; SIN
t
p
= 8.3 ms; T
j(init)
= 25 °C; SIN
I
F
= 8 A; T
j
= 150 °C;
Fig. 5
I
F
= 20 A; T
j
= 25 °C;
Fig. 5
I
F
= 8 A; T
j
= 25 °C
Static characteristics
V
F
forward voltage
Dynamic characteristics
t
rr
[1]
reverse recovery time
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C;
Fig. 6; Fig. 7
Neglecting switching and reverse current losses
WeEn Semiconductors
BYR29X-800
Ultrafast power diode
5. Pinning information
Table 2. Pinning information
Pin
1
2
mb
Symbol Description
K
A
n.c.
cathode
anode
mounting base; isolated
Simplified outline
mb
Graphic symbol
K
A
001aaa020
1
2
TO-220F (SOD113)
6. Ordering information
Table 3. Ordering information
Type number
BYR29X-800
Package
Name
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 2-lead TO-220 "full pack"
Version
SOD113
BYR29X-800
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
19 October 2017
2 / 11
WeEn Semiconductors
BYR29X-800
Ultrafast power diode
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
T
stg
T
j
[1]
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
reverse voltage
average forward current
repetitive peak forward
current
non-repetitive peak
forward current
storage temperature
junction temperature
Conditions
Min
-
-
Max
800
800
800
8
16
60
66
150
150
Unit
V
V
V
A
A
A
A
°C
°C
DC
δ = 0.5 ; T
h
≤ 73 °C; SQW;
Fig. 1; Fig. 2;
Fig. 3
δ = 0.5 ; t
p
= 25 µs; T
h
≤ 73 °C; SQW
t
p
= 10 ms; T
j(init)
= 25 °C; SIN
t
p
= 8.3 ms; T
j(init)
= 25 °C; SIN
[1]
-
-
-
-
-
-40
-
Neglecting switching and reverse current losses
20
P
tot
(W)
15
δ = 0.2
V
o
= 1.26 V
R
s
= 0.03 Ω
δ = 0.5
003aaa467
40
T
h(max)
(°C)
15
V
o
= 1.26 V
003aaa468
67.5
T
h(max)
(°C)
δ = 1.0
67.5
P
tot
(W)
10
R
s
= 0.03 Ω
a = 1.57
a = 1.9
a = 2.2
95
a = 2.8
10
δ = 0.1
P
δ=
t
p
T
95
5
122.5
t
p
t
T
a = 4.0
122.5
5
0
0
4
8
I
F(AV)
(A)
150
12
0
0
2
4
6
I
F(AV)
(A)
8
150
Fig. 1. Forward power dissipation and permissible
heatsink temperature as a function of average forward
current; square waveform; maximum values
Fig. 2. Forward power dissipation and permissible
heatsink temperature as a function of average forward
current; sinusoidal waveform; maximum values
BYR29X-800
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©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
19 October 2017
3 / 11
WeEn Semiconductors
BYR29X-800
Ultrafast power diode
12
I
F(RMS)
(A)
10
003aaa469
8
6
4
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
Fig. 3. Forward RMS current as a function of pulse width; maximum values
BYR29X-800
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©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
19 October 2017
4 / 11
WeEn Semiconductors
BYR29X-800
Ultrafast power diode
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol
R
th(j-h)
Parameter
thermal resistance
from junction to
heatsink
thermal resistance
from junction to
ambient free air
10
Z
th(j-h)
(K/W)
1
Conditions
with heatsink compound;
Fig. 4
Min
-
Typ
-
Max
5.5
Unit
K/W
R
th(j-a)
in free air
-
55
-
K/W
003aaa474
10
-1
P
δ=
t
p
T
t
p
t
T
10
-2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
10
Fig. 4. Transient thermal impedance from junction to heatsink as a function of pulse width
9. Isolation characteristics
Table 6. Isolation characteristics
Symbol
V
isol(RMS)
Parameter
RMS isolation voltage
Conditions
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from
all pins to external heatsink; sinusoidal
waveform; clean and dust free
from cathode to external heatsink
Min
-
Typ
-
Max
2500
Unit
V
C
isol
isolation capacitance
-
10
-
pF
BYR29X-800
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©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
19 October 2017
5 / 11
FPGA/CPLD
