BYT56A, BYT56B, BYT56D, BYT56G, BYT56J, BYT56K, BYT56M
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Vishay Semiconductors
Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
949588
MECHANICAL DATA
Case:
SOD-64
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 858 mg
APPLICATIONS
• Very fast rectification and switching diode
ORDERING INFORMATION
(Example)
DEVICE NAME
BYT56M
BYT56M
ORDERING CODE
BYT56M-TR
BYT56M-TAP
TAPED UNITS
2500 per 10" tape and reel
2500 per ammopack
MINIMUM ORDER QUANTITY
12 500
12 500
PARTS TABLE
PART
BYT56A
BYT56B
BYT56D
BYT56G
BYT56J
BYT56K
BYT56M
TYPE DIFFERENTIATION
V
R
= 50 V; I
F(AV)
= 3 A
V
R
= 100 V; I
F(AV)
= 3 A
V
R
= 200 V; I
F(AV)
= 3 A
V
R
= 400 V; I
F(AV)
= 3 A
V
R
= 600 V; I
F(AV)
= 3 A
V
R
= 800 V; I
F(AV)
= 3 A
V
R
= 1000 V; I
F(AV)
= 3 A
PACKAGE
SOD-64
SOD-64
SOD-64
SOD-64
SOD-64
SOD-64
SOD-64
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
BYT56A
BYT56B
BYT56D
BYT56G
BYT56J
BYT56K
BYT56M
SYMBOL
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
F(AV)
I
F(AV)
E
R
T
j
= T
stg
VALUE
50
100
200
400
600
800
1000
80
1.5
3
10
- 55 to + 175
UNIT
V
V
V
V
V
V
V
A
A
A
mJ
°C
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics
Peak forward surge current
Average forward current
Non repetitive reverse avalanche energy
Junction and storage temperature range
t
p
= 10 ms, half sine wave
On PC board
l = 10 mm
I
(BR)R
= 0.4 A
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
Lead length l = 10 mm, T
L
= constant
On PC board with spacing 25 mm
SYMBOL
R
thJA
R
thJA
VALUE
25
70
UNIT
K/W
K/W
Rev. 1.8, 11-Sep-12
Document Number: 86032
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYT56A, BYT56B, BYT56D, BYT56G, BYT56J, BYT56K, BYT56M
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Reverse recovery time
TEST CONDITION
I
F
= 3 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 150 °C
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
PART
SYMBOL
V
F
I
R
I
R
t
rr
MIN.
-
-
-
-
TYP.
-
-
-
-
MAX.
1.4
5
150
100
UNIT
V
μA
μA
ns
TYPICAL CHARACTERISTICS
(T
amb
= 25
C,
unless otherwise specified)
R
thJA
- Ther. Resist. Junction/Ambient (K/W)
40
3.5
I
FAV
- Average Forward Current (A)
3.0
2.5
2.0
1.5
1.0
0.5
0
R
thJA
= 70 K/W
PCB: d = 25 mm
V
R
= V
RRM
half
sinewave
R
thJA
= 25 K/W
I = 10 mm
30
20
l
l
10
T
L
= constant
0
0
949462
5
10
15
20
25
30
16366
0
20
40
60
80 100 120 140 160 180
l - Lead Length (mm)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
100
1000
V
R
= V
RRM
I
F
- Forward Current (A)
10
I
R
- Reverse Current (μA)
2.5
3.0
T
j
= 175 °C
100
1
T
j
= 25 °C
0.1
10
0.01
0.001
0
16365
0.5
1.0
1.5
2.0
1
25
16367
50
75
100
125
150
175
V
F
- Forward Voltage (V)
T
j
- Junction Temperature (°C)
Fig. 2 - Max. Forward Current vs. Forward Voltage
Fig. 4 - Max. Reverse Current vs. Junction Temperature
Rev. 1.8, 11-Sep-12
Document Number: 86032
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYT56A, BYT56B, BYT56D, BYT56G, BYT56J, BYT56K, BYT56M
www.vishay.com
Vishay Semiconductors
P
R
- Reverse Power Dissipation (mW)
450
90
V
R
= V
RRM
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
P
R
-Limit
at 80 % V
R
P
R
-Limit
at 100 % V
R
C
D
- Diode Capacitance (pF)
400
80
70
60
50
40
30
20
10
0
0.1
1
10
f = 1 MHz
100
16368
T
j
- Junction Temperature (°C)
16369
V
R
- Reverse Voltage (V)
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-64
Sintered Glass Case
SOD-64
Cathode Identification
4.3 (0.168) max.
1.35 (0.053) max.
26(1.014) min.
4 (0.156) max.
26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
Rev. 1.8, 11-Sep-12
Document Number: 86032
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Revision: 08-Feb-17
1
Document Number: 91000